| Infrared and Raman spectra of the IV-VI compounds SnS and SnSe HR Chandrasekhar, RG Humphreys, U Zwick, M Cardona Physical Review B 15 (4), 2177, 1977 | 570 | 1977 |
| Optical and structural properties of ZnO films deposited on GaAs by pulsed laser deposition YR Ryu, S Zhu, JD Budai, HR Chandrasekhar, PF Miceli, HW White Journal of Applied Physics 88 (1), 201-204, 2000 | 329 | 2000 |
| High-pressure studies of GaAs-As quantum wells of widths 26 to 150 Å U Venkateswaran, M Chandrasekhar, HR Chandrasekhar, BA Vojak, ... Physical Review B 33 (12), 8416, 1986 | 207 | 1986 |
| Temperature-dependent photoluminescence of organic semiconductors with varying backbone conformation S Guha, JD Rice, YT Yau, CM Martin, M Chandrasekhar, ... Physical Review B 67 (12), 125204, 2003 | 149* | 2003 |
| Planarity of para Hexaphenyl S Guha, W Graupner, R Resel, M Chandrasekhar, HR Chandrasekhar, ... Physical review letters 82 (18), 3625, 1999 | 123 | 1999 |
| Study of the localized vibrations of boron in heavily doped Si M Chandrasekhar, HR Chandrasekhar, M Grimsditch, M Cardona Physical Review B 22 (10), 4825, 1980 | 104 | 1980 |
| Determination of the deformation-potential constant of the conduction band of silicon from the piezospectroscopy of donors VJ Tekippe, HR Chandrasekhar, P Fisher, AK Ramdas Physical Review B 6 (6), 2348, 1972 | 104 | 1972 |
| Nonparabolicity of the conduction band and the coupled plasmon-phonon modes in n-GaAs HR Chandrasekhar, AK Ramdas Physical Review B 21 (4), 1511, 1980 | 99 | 1980 |
| Photoluminescence studies of a GaAs-As superlattice at 8–300 K under hydrostatic pressure (0–70 kbar) U Venkateswaran, M Chandrasekhar, HR Chandrasekhar, T Wolfram, ... Physical Review B 31 (6), 4106, 1985 | 77 | 1985 |
| Pressure tuning of strains in semiconductor heterostructures:(ZnSe epilayer)/(GaAs epilayer) B Rockwell, HR Chandrasekhar, M Chandrasekhar, AK Ramdas, ... Physical Review B 44 (20), 11307, 1991 | 76 | 1991 |
| Raman scattering and infrared reflectivity in GeSe HR Chandrasekhar, U Zwick Solid State Communications 18 (11-12), 1509-1513, 1976 | 74 | 1976 |
| Quantitative piezospectroscopy of the ground and excited states of acceptors in silicon HR Chandrasekhar, P Fisher, AK Ramdas, S Rodriguez Physical Review B 8 (8), 3836, 1973 | 69 | 1973 |
| Luminescence and Raman spectra of CdS under hydrostatic pressure U Venkateswaran, M Chandrasekhar, HR Chandrasekhar Physical Review B 30 (6), 3316, 1984 | 68 | 1984 |
| Primary optical excitations and excited-state interaction energies in sexithiophene MA Loi, C Martin, HR Chandrasekhar, M Chandrasekhar, W Graupner, ... Physical Review B 66 (11), 113102, 2002 | 57 | 2002 |
| Infrared and Raman spectra and lattice dynamics of the superionic conductor Li 3 N HR Chandrasekhar, G Bhattacharya, R Migoni, H Bilz Physical Review B 17 (2), 884, 1978 | 55 | 1978 |
| Long-wavelength phonons in mixed-valence semiconductor Sn II Sn IV S 3 HR Chandrasekhar, DG Mead Physical Review B 19 (2), 932, 1979 | 54 | 1979 |
| Tuning Intermolecular Interactions: A Study of the Structural and Vibrational Properties of p-Hexaphenyl under Pressure S Guha, W Graupner, R Resel, M Chandrasekhar, HR Chandrasekhar, ... The Journal of Physical Chemistry A 105 (25), 6203-6211, 2001 | 51 | 2001 |
| Pressure dependence of the Raman spectra of the IV-VI layer compounds GeS and GeSe HR Chandrasekhar, RG Humphreys, M Cardona Physical Review B 16 (6), 2981, 1977 | 48 | 1977 |
| Geometry-dependent electronic properties of highly fluorescent conjugated molecules SC Yang, W Graupner, S Guha, P Puschnig, C Martin, HR Chandrasekhar, ... Physical review letters 85 (11), 2388, 2000 | 47 | 2000 |
| Resonant interaction of acceptor states with optical phonons in silicon HR Chandrasekhar, AK Ramdas, S Rodriguez Physical Review B 14 (6), 2417, 1976 | 43 | 1976 |
Meera ChandrasekharProfessor of Physics, University of Missouri, Columbia, MoVerified email at missouri.edu
