Paul Fons

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Александр Владимирович Колобов (...РГПУ им. А.И. ГерценаVerified email at herzen.spb.ru
Kakuya IwataNational institute of Advanced Industrial Science and Technology (AIST)Verified email at aist.go.jp
Yuta SaitoGroup Leader, National Institute of Advanced Industrial Science and Technology (AIST)Verified email at aist.go.jp
milos krbalSenior researcher, CEMNAT, University of PardubiceVerified email at upce.cz
Robert E SimpsonUniversity of BrminghamVerified email at bham.ac.uk
SAKURAI KeiichiroNational Institute of Advanced Industrial Science and Technology (AIST)Verified email at aist.go.jp
Muneaki HaseDepartment of Applied Physics, University of TsukubaVerified email at u.tsukuba.ac.jp
Kirill MitrofanovOISTVerified email at oist.jp
Makino KotaroNational Institute of Advanced Industrial Science and TechnologyVerified email at aist.go.jp
Raffaella CalarcoCNR-IMMVerified email at cnr.it
Anatoly I. FrenkelStony Brook UniversityVerified email at stonybrook.edu
Takashi YagiNational Institute of Advanced Industrial Science and TechnologyVerified email at aist.go.jp
Alessandro GiussaniSilanna SemiconductorVerified email at silanna.com
Shuichi MurakamiProfessor of Physics, Tokyo Institute of TechnologyVerified email at stat.phys.titech.ac.jp
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Joe GreeneProfessor of Materials Science and Physics, University of IllinoisVerified email at uiuc.edu
Spyros N. YannopoulosProfessor, Department of Chemistry, University of Patras, and Research Director (FORTH/ICE-HTVerified email at iceht.forth.gr
Konstantinos S. AndrikopoulosPhysics Dpt., University of Patras & ICEHT/FORTHVerified email at iceht.forth.gr
Motohiro SuzukiKwansei Gakuin UniversityVerified email at kwansei.ac.jp
YI SHUANGTohoku universityVerified email at dc.tohoku.ac.jp

Paul Fons

Professor at Keio University

Verified email at keio.jp

Materials Science Phase-change materials X-ray absorption Density-functional theory Ultra-fast structural techniques


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Understanding the phase-change mechanism of rewritable optical media AV Kolobov, P Fons, AI Frenkel, AL Ankudinov, J Tominaga, T Uruga Nature materials 3 (10), 703-708, 2004	1522	2004
Interfacial phase-change memory RE Simpson, P Fons, AV Kolobov, T Fukaya, M Krbal, T Yagi, J Tominaga Nature nanotechnology 6 (8), 501-505, 2011	703	2011
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki Thin Solid Films 431, 369-372, 2003	338	2003
Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅ RE Simpson, M Krbal, P Fons, AV Kolobov, J Tominaga, T Uruga, ... Nano letters 10 (2), 414-419, 2010	261	2010
Uniaxial locked epitaxy of ZnO on the face of sapphire P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ... Applied Physics Letters 77 (12), 1801-1803, 2000	261	2000
Growth of high-quality epitaxial ZnO films on α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara Journal of Crystal Growth 201, 627-632, 1999	249	1999
Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE K Iwata, P Fons, A Yamada, K Matsubara, S Niki Journal of Crystal Growth 209 (2-3), 526-531, 2000	228	2000
Distortion-triggered loss of long-range order in solids with bonding energy hierarchy AV Kolobov, M Krbal, P Fons, J Tominaga, T Uruga Nature chemistry 3 (4), 311-316, 2011	219	2011
Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials KS Andrikopoulos, SN Yannopoulos, AV Kolobov, P Fons, J Tominaga Journal of Physics and Chemistry of Solids 68 (5-6), 1074-1078, 2007	188	2007
Na-induced variations in the structural, optical, and electrical properties of thin films S Ishizuka, A Yamada, MM Islam, H Shibata, P Fons, T Sakurai, K Akimoto, ... Journal of applied physics 106 (3), 034908, 2009	183	2009
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ... Applied physics letters 79 (25), 4139-4141, 2001	180	2001
Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb₂Te₃ Superlattices J Tominaga, AV Kolobov, P Fons, T Nakano, S Murakami Advanced Materials Interfaces 1 (1), 1300027, 2014	176	2014
ZnO growth on Si by radical source MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ... Journal of Crystal Growth 214, 50-54, 2000	170	2000
Band gap energies of bulk, thin-film, and epitaxial layers of and S Chichibu, T Mizutani, K Murakami, T Shioda, T Kurafuji, H Nakanishi, ... Journal of Applied Physics 83 (7), 3678-3689, 1998	169	1998
Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO P Fons, H Tampo, AV Kolobov, M Ohkubo, S Niki, J Tominaga, R Carboni, ... Physical Review Letters 96 (4), 045504, 2006	163	2006
Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ... Solar energy materials and solar cells 87 (1-4), 541-548, 2005	154	2005
Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures H Tampo, H Shibata, K Maejima, A Yamada, K Matsubara, P Fons, ... Applied Physics Letters 93 (20), 202104, 2008	151	2008
Band-gap modified Al-doped transparent conducting films deposited by pulsed laser deposition K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki Applied physics letters 85 (8), 1374-1376, 2004	151	2004
Local structure of crystallized GeTe films AV Kolobov, J Tominaga, P Fons, T Uruga Applied physics letters 82 (3), 382-384, 2003	142	2003
Two-dimensional electron gas in Zn polar heterostructures grown by radical source molecular beam epitaxy H Tampo, H Shibata, K Matsubara, A Yamada, P Fons, S Niki, ... Applied physics letters 89 (13), 132113, 2006	133	2006

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