| Understanding the phase-change mechanism of rewritable optical media AV Kolobov, P Fons, AI Frenkel, AL Ankudinov, J Tominaga, T Uruga Nature materials 3 (10), 703, 2004 | 1198 | 2004 |
| Interfacial phase-change memory RE Simpson, P Fons, AV Kolobov, T Fukaya, M Krbal, T Yagi, J Tominaga Nature nanotechnology 6 (8), 501, 2011 | 416 | 2011 |
| ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki Thin Solid Films 431, 369-372, 2003 | 277 | 2003 |
| Uniaxial locked epitaxy of ZnO on the face of sapphire P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ... Applied Physics Letters 77 (12), 1801-1803, 2000 | 246 | 2000 |
| Growth of high-quality epitaxial ZnO films on α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara Journal of Crystal Growth 201, 627-632, 1999 | 220 | 1999 |
| Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE K Iwata, P Fons, A Yamada, K Matsubara, S Niki Journal of Crystal Growth 209 (2-3), 526-531, 2000 | 215 | 2000 |
| Toward the ultimate limit of phase change in Ge2Sb2Te5 RE Simpson, M Krbal, P Fons, AV Kolobov, J Tominaga, T Uruga, ... Nano letters 10 (2), 414-419, 2009 | 193 | 2009 |
| Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ... Applied physics letters 79 (25), 4139-4141, 2001 | 156 | 2001 |
| ZnO growth on Si by radical source MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ... Journal of Crystal Growth 214, 50-54, 2000 | 152 | 2000 |
| Distortion-triggered loss of long-range order in solids with bonding energy hierarchy AV Kolobov, M Krbal, P Fons, J Tominaga, T Uruga Nature chemistry 3 (4), 311, 2011 | 148 | 2011 |
| Band gap energies of bulk, thin-film, and epitaxial layers of and S Chichibu, T Mizutani, K Murakami, T Shioda, T Kurafuji, H Nakanishi, ... Journal of Applied Physics 83 (7), 3678-3689, 1998 | 144 | 1998 |
| Na-induced variations in the structural, optical, and electrical properties of thin films S Ishizuka, A Yamada, MM Islam, H Shibata, P Fons, T Sakurai, K Akimoto, ... Journal of Applied Physics 106 (3), 034908, 2009 | 141 | 2009 |
| Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO P Fons, H Tampo, AV Kolobov, M Ohkubo, S Niki, J Tominaga, R Carboni, ... Physical Review Letters 96 (4), 045504, 2006 | 138 | 2006 |
| Band-gap modified Al-doped transparent conducting films deposited by pulsed laser deposition K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki Applied physics letters 85 (8), 1374-1376, 2004 | 133 | 2004 |
| Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ... Solar energy materials and solar cells 87 (1-4), 541-548, 2005 | 131 | 2005 |
| Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials KS Andrikopoulos, SN Yannopoulos, AV Kolobov, P Fons, J Tominaga Journal of Physics and Chemistry of Solids 68 (5-6), 1074-1078, 2007 | 120 | 2007 |
| Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures H Tampo, H Shibata, K Maejima, A Yamada, K Matsubara, P Fons, ... Applied Physics Letters 93 (20), 202104, 2008 | 114 | 2008 |
| Growth of undoped ZnO films with improved electrical properties by radical source molecular beam epitaxy K Nakahara, T Tanabe, H Takasu, P Fons, K Iwata, A Yamada, ... Japanese Journal of Applied Physics 40 (1R), 250, 2001 | 112 | 2001 |
| Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb2Te3 Superlattices J Tominaga, AV Kolobov, P Fons, T Nakano, S Murakami Advanced Materials Interfaces 1 (1), 1300027, 2014 | 110 | 2014 |
| Uniaxial locked growth of high-quality epitaxial ZnO films on (1120) α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara, M Watanabe Journal of Crystal Growth 209 (2-3), 532-536, 2000 | 110 | 2000 |
Robert E SimpsonSUTD Singapore University of Technology and DesignVerified email at sutd.edu.sg
