Paul Fons - Google Scholar Citations

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Yamada AkiraTokyo Institute of TechnologyVerified email at m.titech.ac.jp
milos krbalSenior researcher, CEMNAT, University of PardubiceVerified email at upce.cz
Robert E SimpsonSUTD Singapore University of Technology and DesignVerified email at sutd.edu.sg
Yuta SaitoSenior Researcher, National Institute of Advanced Industrial Science and TechnologyVerified email at aist.go.jp
Muneaki HaseDepartment of Applied Physics, University of TsukubaVerified email at bk.tsukuba.ac.jp
Anatoly I. FrenkelStony Brook UniversityVerified email at stonybrook.edu
Raffaella CalarcoCNR-IMMVerified email at cnr.it
Makino KotaroNational Institute of Advanced Industrial Science and TechnologyVerified email at aist.go.jp
Spyros N. YannopoulosPrincipal Researcher at FORTH/ICE-HT (Patras, GREECE)Verified email at iceht.forth.gr
Kostas AndrikopoulosICEHT/FORTHVerified email at iceht.forth.gr
Takashi YagiNational Institute of Advanced Industrial Science and TechnologyVerified email at aist.go.jp
Alessandro GiussaniPostdoctoral Researcher, Okinawa Institute of Science and TechnologyVerified email at oist.jp
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Joe GreeneProfessor of Materials Science and Physics, University of IllinoisVerified email at uiuc.edu
Shuichi MurakamiProfessor of Physics, Tokyo Institute of TechnologyVerified email at stat.phys.titech.ac.jp
Motohiro SuzukiJASRI SPring-8Verified email at spring8.or.jp
Tetsuya BabaNational Institute for Materials ScienceVerified email at nims.go.jp
Jozsef Hegedusex affiliations : Univ_CB_UK / Aalto_Univ_FI / Philipps_Univ_Marburg_DE / Tech_Univ_BP_HUVerified email at pm.me
xiaomin WangDartmouth CollegeVerified email at dartmouth.edu
Federico BoscheriniDepartment of Physics and Astronomy, University of BolognaVerified email at unibo.it

Paul Fons

Chief Scientist, National Institute of Advanced Industrial Science and Technology

Verified email at aist.go.jp

Materials Science Phase-change materials X-ray absorption Density-functional theory Ultra-fast structural techniques


Title	Cited by	Year
Understanding the phase-change mechanism of rewritable optical media AV Kolobov, P Fons, AI Frenkel, AL Ankudinov, J Tominaga, T Uruga Nature materials 3 (10), 703, 2004	1214	2004
Interfacial phase-change memory RE Simpson, P Fons, AV Kolobov, T Fukaya, M Krbal, T Yagi, J Tominaga Nature nanotechnology 6 (8), 501, 2011	430	2011
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki Thin Solid Films 431, 369-372, 2003	279	2003
Uniaxial locked epitaxy of ZnO on the face of sapphire P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ... Applied Physics Letters 77 (12), 1801-1803, 2000	249	2000
Growth of high-quality epitaxial ZnO films on α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara Journal of Crystal Growth 201, 627-632, 1999	221	1999
Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE K Iwata, P Fons, A Yamada, K Matsubara, S Niki Journal of Crystal Growth 209 (2-3), 526-531, 2000	215	2000
Toward the ultimate limit of phase change in Ge2Sb2Te5 RE Simpson, M Krbal, P Fons, AV Kolobov, J Tominaga, T Uruga, ... Nano letters 10 (2), 414-419, 2009	199	2009
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ... Applied physics letters 79 (25), 4139-4141, 2001	157	2001
Distortion-triggered loss of long-range order in solids with bonding energy hierarchy AV Kolobov, M Krbal, P Fons, J Tominaga, T Uruga Nature chemistry 3 (4), 311, 2011	154	2011
ZnO growth on Si by radical source MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ... Journal of Crystal Growth 214, 50-54, 2000	153	2000
Band gap energies of bulk, thin-film, and epitaxial layers of and S Chichibu, T Mizutani, K Murakami, T Shioda, T Kurafuji, H Nakanishi, ... Journal of Applied Physics 83 (7), 3678-3689, 1998	144	1998
Na-induced variations in the structural, optical, and electrical properties of thin films S Ishizuka, A Yamada, MM Islam, H Shibata, P Fons, T Sakurai, K Akimoto, ... Journal of Applied Physics 106 (3), 034908, 2009	141	2009
Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO P Fons, H Tampo, AV Kolobov, M Ohkubo, S Niki, J Tominaga, R Carboni, ... Physical Review Letters 96 (4), 045504, 2006	141	2006
Band-gap modified Al-doped transparent conducting films deposited by pulsed laser deposition K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki Applied physics letters 85 (8), 1374-1376, 2004	134	2004
Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ... Solar energy materials and solar cells 87 (1-4), 541-548, 2005	131	2005
Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials KS Andrikopoulos, SN Yannopoulos, AV Kolobov, P Fons, J Tominaga Journal of Physics and Chemistry of Solids 68 (5-6), 1074-1078, 2007	124	2007
Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures H Tampo, H Shibata, K Maejima, A Yamada, K Matsubara, P Fons, ... Applied Physics Letters 93 (20), 202104, 2008	118	2008
Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb₂Te₃ Superlattices J Tominaga, AV Kolobov, P Fons, T Nakano, S Murakami Advanced Materials Interfaces 1 (1), 1300027, 2014	113	2014
Growth of undoped ZnO films with improved electrical properties by radical source molecular beam epitaxy K Nakahara, T Tanabe, H Takasu, P Fons, K Iwata, A Yamada, ... Japanese Journal of Applied Physics 40 (1R), 250, 2001	113	2001
Uniaxial locked growth of high-quality epitaxial ZnO films on (1120) α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara, M Watanabe Journal of Crystal Growth 209 (2-3), 532-536, 2000	111	2000

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