Paul Fons

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Александр Владимирович Колобов (...РГПУ им. А.И. ГерценаVerified email at herzen.spb.ru
Kakuya IwataNational institute of Advanced Industrial Science and Technology (AIST)Verified email at aist.go.jp
milos krbalSenior researcher, CEMNAT, University of PardubiceVerified email at upce.cz
Yuta SaitoSenior Researcher, National Institute of Advanced Industrial Science and TechnologyVerified email at aist.go.jp
SAKURAI KeiichiroNational Institute of Advanced Industrial Science and Technology (AIST)Verified email at aist.go.jp
Robert E SimpsonSUTD Singapore University of Technology and DesignVerified email at sutd.edu.sg
Muneaki HaseDepartment of Applied Physics, University of TsukubaVerified email at bk.tsukuba.ac.jp
Kirill MitrofanovOISTVerified email at oist.jp
Anatoly I. FrenkelStony Brook UniversityVerified email at stonybrook.edu
Makino KotaroNational Institute of Advanced Industrial Science and TechnologyVerified email at aist.go.jp
Yamada AkiraTokyo Institute of TechnologyVerified email at m.titech.ac.jp
Raffaella CalarcoCNR-IMMVerified email at cnr.it
Spyros N. YannopoulosPrincipal Researcher at FORTH/ICE-HT (Patras, GREECE)Verified email at iceht.forth.gr
Konstantinos S. AndrikopoulosPhysics Dpt., University of Patras & ICEHT/FORTHVerified email at iceht.forth.gr
Takashi YagiNational Institute of Advanced Industrial Science and TechnologyVerified email at aist.go.jp
Alessandro GiussaniSilanna SemiconductorVerified email at silanna.com
Shuichi MurakamiProfessor of Physics, Tokyo Institute of TechnologyVerified email at stat.phys.titech.ac.jp
Henning RiechertDirector, Paul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Joe GreeneProfessor of Materials Science and Physics, University of IllinoisVerified email at uiuc.edu
Motohiro SuzukiJASRI SPring-8Verified email at spring8.or.jp

Paul Fons

Professor at Keio University

Verified email at keio.jp

Materials Science Phase-change materials X-ray absorption Density-functional theory Ultra-fast structural techniques


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Understanding the phase-change mechanism of rewritable optical media AV Kolobov, P Fons, AI Frenkel, AL Ankudinov, J Tominaga, T Uruga Nature materials 3 (10), 703-708, 2004	1392	2004
Interfacial phase-change memory RE Simpson, P Fons, AV Kolobov, T Fukaya, M Krbal, T Yagi, J Tominaga Nature nanotechnology 6 (8), 501-505, 2011	623	2011
ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications K Matsubara, P Fons, K Iwata, A Yamada, K Sakurai, H Tampo, S Niki Thin Solid Films 431, 369-372, 2003	302	2003
Uniaxial locked epitaxy of ZnO on the face of sapphire P Fons, K Iwata, A Yamada, K Matsubara, S Niki, K Nakahara, T Tanabe, ... Applied Physics Letters 77 (12), 1801-1803, 2000	257	2000
Toward the Ultimate Limit of Phase Change in Ge₂Sb₂Te₅ RE Simpson, M Krbal, P Fons, AV Kolobov, J Tominaga, T Uruga, ... Nano letters 10 (2), 414-419, 2010	235	2010
Growth of high-quality epitaxial ZnO films on α-Al2O3 P Fons, K Iwata, S Niki, A Yamada, K Matsubara Journal of Crystal Growth 201, 627-632, 1999	235	1999
Nitrogen-induced defects in ZnO: N grown on sapphire substrate by gas source MBE K Iwata, P Fons, A Yamada, K Matsubara, S Niki Journal of Crystal Growth 209 (2-3), 526-531, 2000	229	2000
Distortion-triggered loss of long-range order in solids with bonding energy hierarchy AV Kolobov, M Krbal, P Fons, J Tominaga, T Uruga Nature chemistry 3 (4), 311-316, 2011	190	2011
Interactions between gallium and nitrogen dopants in ZnO films grown by radical-source molecular-beam epitaxy K Nakahara, H Takasu, P Fons, A Yamada, K Iwata, K Matsubara, ... Applied physics letters 79 (25), 4139-4141, 2001	167	2001
Na-induced variations in the structural, optical, and electrical properties of thin films S Ishizuka, A Yamada, MM Islam, H Shibata, P Fons, T Sakurai, K Akimoto, ... Journal of Applied Physics 106 (3), 034908, 2009	164	2009
ZnO growth on Si by radical source MBE K Iwata, P Fons, S Niki, A Yamada, K Matsubara, K Nakahara, T Tanabe, ... Journal of Crystal Growth 214, 50-54, 2000	161	2000
Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO P Fons, H Tampo, AV Kolobov, M Ohkubo, S Niki, J Tominaga, R Carboni, ... Physical Review Letters 96 (4), 045504, 2006	154	2006
Raman scattering study of GeTe and Ge2Sb2Te5 phase-change materials KS Andrikopoulos, SN Yannopoulos, AV Kolobov, P Fons, J Tominaga Journal of Physics and Chemistry of Solids 68 (5-6), 1074-1078, 2007	153	2007
Band gap energies of bulk, thin-film, and epitaxial layers of and S Chichibu, T Mizutani, K Murakami, T Shioda, T Kurafuji, H Nakanishi, ... Journal of Applied Physics 83 (7), 3678-3689, 1998	153	1998
Ferroelectric Order Control of the Dirac‐Semimetal Phase in GeTe‐Sb₂Te₃ Superlattices J Tominaga, AV Kolobov, P Fons, T Nakano, S Murakami Advanced Materials Interfaces 1 (1), 1300027, 2014	151	2014
Fabrication of wide-gap Cu (In1− xGax) Se2 thin film solar cells: a study on the correlation of cell performance with highly resistive i-ZnO layer thickness S Ishizuka, K Sakurai, A Yamada, K Matsubara, P Fons, K Iwata, ... Solar energy materials and solar cells 87 (1-4), 541-548, 2005	146	2005
Band-gap modified Al-doped transparent conducting films deposited by pulsed laser deposition K Matsubara, H Tampo, H Shibata, A Yamada, P Fons, K Iwata, S Niki Applied Physics Letters 85 (8), 1374-1376, 2004	141	2004
Polarization-induced two-dimensional electron gases in ZnMgO/ZnO heterostructures H Tampo, H Shibata, K Maejima, A Yamada, K Matsubara, P Fons, ... Applied Physics Letters 93 (20), 202104, 2008	131	2008
Local structure of crystallized GeTe films AV Kolobov, J Tominaga, P Fons, T Uruga Applied physics letters 82 (3), 382-384, 2003	130	2003
Two-dimensional electron gas in Zn polar heterostructures grown by radical source molecular beam epitaxy H Tampo, H Shibata, K Matsubara, A Yamada, P Fons, S Niki, ... Applied physics letters 89 (13), 132113, 2006	121	2006

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