| Optical critical points of thin-film alloys: A comparative study VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ... Physical Review B 73 (12), 125207, 2006 | 412 | 2006 |
| Perfectly tetragonal, tensile-strained Ge on buffered Si(100) YY Fang, J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ... Applied physics letters 90 (6), 061915, 2007 | 148 | 2007 |
| Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys VR D’Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez Physical Review Letters 102 (10), 107403, 2009 | 143 | 2009 |
| Sn-alloying as a means of increasing the optical absorption of Ge at the C-and L-telecommunication bands VR D'Costa, Y Fang, J Mathews, R Roucka, J Tolle, J Menéndez, ... Semiconductor science and technology 24 (11), 115006, 2009 | 114 | 2009 |
| Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures D Kohen, N Bhargava, J Tolle, V D'costa US Patent 10,535,516, 2020 | 107 | 2020 |
| Raman scattering in Ge1− ySny alloys VR D’costa, J Tolle, R Roucka, CD Poweleit, J Kouvetakis, J Menendez Solid State Communications 144 (5-6), 240-244, 2007 | 104 | 2007 |
| Low temperature chemical vapor deposition of Si-based compounds via : Metastable heteroepitaxial structures J Tolle, AVG Chizmeshya, YY Fang, J Kouvetakis, VR D’Costa, CW Hu, ... Applied physics letters 89 (23), 231924, 2006 | 103 | 2006 |
| Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics YY Fang, J Xie, J Tolle, R Roucka, VR D’Costa, AVG Chizmeshya, ... Journal of the American Chemical Society 130 (47), 16095-16102, 2008 | 101 | 2008 |
| Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors VR D'Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez Thin Solid Films 518 (9), 2531-2537, 2010 | 97 | 2010 |
| Advances in SiGeSn technology R Soref, J Kouvetakis, J Tolle, J Menendez, V D’Costa Journal of Materials Research 22 (12), 3281-3291, 2007 | 92 | 2007 |
| Synthesis, stability range, and fundamental properties of Si− Ge− Sn semiconductors grown directly on Si (100) and Ge (100) platforms J Xie, AVG Chizmeshya, J Tolle, VR D’Costa, J Menendez, J Kouvetakis Chemistry of Materials 22 (12), 3779-3789, 2010 | 78 | 2010 |
| Versatile buffer layer architectures based on alloys R Roucka, J Tolle, C Cook, AVG Chizmeshya, J Kouvetakis, V D’Costa, ... Applied Physics Letters 86 (19), 191912, 2005 | 78 | 2005 |
| Transferability of optical bowing parameters between binary and ternary group-IV alloys VR D'Costa, CS Cook, J Menéndez, J Tolle, J Kouvetakis, S Zollner Solid state communications 138 (6), 309-313, 2006 | 67 | 2006 |
| Compositional dependence of Raman frequencies in ternary alloys VR D’Costa, J Tolle, CD Poweleit, J Kouvetakis, J Menendez Physical review B 76 (3), 035211, 2007 | 55 | 2007 |
| Direct integration of active semiconductors on Si(100) J Xie, J Tolle, VR D’Costa, AVG Chizmeshya, J Menendez, J Kouvetakis Applied Physics Letters 95 (18), 181909, 2009 | 51 | 2009 |
| Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ... Applied physics letters 88 (25), 252112, 2006 | 50 | 2006 |
| Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength … Y Huang, JH Ryou, RD Dupuis, VR D'costa, EH Steenbergen, J Fan, ... Journal of Crystal Growth 314 (1), 92-96, 2011 | 49 | 2011 |
| photoconductor structures at : From advanced materials to prototype devices R Roucka, J Xie, J Kouvetakis, J Mathews, V D’costa, J Menendez, J Tolle, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008 | 48 | 2008 |
| Molecular approaches to p-and n-nanoscale doping of Ge1− ySny semiconductors: structural, electrical and transport properties J Xie, J Tolle, VR D’Costa, C Weng, AVG Chizmeshya, J Menendez, ... Solid-state electronics 53 (8), 816-823, 2009 | 44 | 2009 |
| Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry YY Fang, J Tolle, J Tice, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ... Chemistry of Materials 19 (24), 5910-5925, 2007 | 43 | 2007 |
