Vijay Richard D'Costa
Vijay Richard D'Costa
ASM America
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Optical critical points of thin-film alloys: A comparative study
VR D’costa, CS Cook, AG Birdwell, CL Littler, M Canonico, S Zollner, ...
Physical Review B—Condensed Matter and Materials Physics 73 (12), 125207, 2006
Method for depositing a semiconductor structure on a surface of a substrate and related semiconductor structures
D Kohen, N Bhargava, J Tolle, V D'costa
US Patent 10,535,516, 2020
Perfectly tetragonal, tensile-strained Ge on Ge1− ySny buffered Si (100)
YY Fang, J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ...
Applied physics letters 90 (6), 2007
Tunable optical gap at a fixed lattice constant in group-IV semiconductor alloys
VR D’Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez
Physical Review Letters 102 (10), 107403, 2009
Raman scattering in Ge1− ySny alloys
VR D’costa, J Tolle, R Roucka, CD Poweleit, J Kouvetakis, J Menendez
Solid State Communications 144 (5-6), 240-244, 2007
Sn-alloying as a means of increasing the optical absorption of Ge at the C-and L-telecommunication bands
VR D'Costa, Y Fang, J Mathews, R Roucka, J Tolle, J Menéndez, ...
Semiconductor science and technology 24 (11), 115006, 2009
Low temperature chemical vapor deposition of Si-based compounds via SiH3SiH2SiH3: Metastable SiSn∕ GeSn∕ Si (100) heteroepitaxial structures
J Tolle, AVG Chizmeshya, YY Fang, J Kouvetakis, VR D’Costa, CW Hu, ...
Applied physics letters 89 (23), 2006
Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors
VR D'Costa, YY Fang, J Tolle, J Kouvetakis, J Menendez
Thin Solid Films 518 (9), 2531-2537, 2010
Molecular-based synthetic approach to new group IV materials for high-efficiency, low-cost solar cells and Si-based optoelectronics
YY Fang, J Xie, J Tolle, R Roucka, VR D’Costa, AVG Chizmeshya, ...
Journal of the American Chemical Society 130 (47), 16095-16102, 2008
Synthesis, stability range, and fundamental properties of Si− Ge− Sn semiconductors grown directly on Si (100) and Ge (100) platforms
J Xie, AVG Chizmeshya, J Tolle, VR D’Costa, J Menendez, J Kouvetakis
Chemistry of Materials 22 (12), 3779-3789, 2010
Advances in SiGeSn technology
R Soref, J Kouvetakis, J Tolle, J Menendez, V D’Costa
Journal of Materials Research 22 (12), 3281-3291, 2007
Versatile buffer layer architectures based on Ge1− xSnx alloys
R Roucka, J Tolle, C Cook, AVG Chizmeshya, J Kouvetakis, V D’Costa, ...
Applied Physics Letters 86 (19), 2005
Transferability of optical bowing parameters between binary and ternary group-IV alloys
VR D'Costa, CS Cook, J Menéndez, J Tolle, J Kouvetakis, S Zollner
Solid State Communications 138 (6), 309-313, 2006
Compositional dependence of Raman frequencies in ternary alloys
VR D’Costa, J Tolle, CD Poweleit, J Kouvetakis, J Menendez
Physical Review B—Condensed Matter and Materials Physics 76 (3), 035211, 2007
Direct integration of active Ge1− x (Si4Sn) x semiconductors on Si (100)
J Xie, J Tolle, VR D’Costa, AVG Chizmeshya, J Menendez, J Kouvetakis
Applied Physics Letters 95 (18), 2009
Epitaxial growth and characterization of InAs/GaSb and InAs/InAsSb type-II superlattices on GaSb substrates by metalorganic chemical vapor deposition for long wavelength …
Y Huang, JH Ryou, RD Dupuis, VR D'costa, EH Steenbergen, J Fan, ...
Journal of Crystal Growth 314 (1), 92-96, 2011
Ge1− ySny photoconductor structures at 1.55 μm: From advanced materials to prototype devices
R Roucka, J Xie, J Kouvetakis, J Mathews, V D’costa, J Menendez, J Tolle, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2008
Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon
J Tolle, R Roucka, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ...
Applied physics letters 88 (25), 2006
Molecular approaches to p-and n-nanoscale doping of Ge1− ySny semiconductors: Structural, electrical and transport properties
J Xie, J Tolle, VR D’Costa, C Weng, AVG Chizmeshya, J Menendez, ...
Solid-state electronics 53 (8), 816-823, 2009
Epitaxy-driven synthesis of elemental Ge/Si strain-engineered materials and device structures via designer molecular chemistry
YY Fang, J Tolle, J Tice, AVG Chizmeshya, J Kouvetakis, VR D’Costa, ...
Chemistry of Materials 19 (24), 5910-5925, 2007
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