| Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55 AJ Zilkie, J Meier, M Mojahedi, PJ Poole, P Barrios, D Poitras, TJ Rotter, ... IEEE Journal of Quantum Electronics 43 (11), 982-991, 2007 | 115 | 2007 |
| wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer G Balakrishnan, S Huang, TJ Rotter, A Stintz, LR Dawson, KJ Malloy, ... Applied physics letters 84 (12), 2058-2060, 2004 | 107 | 2004 |
| Emission of terahertz radiation from coupled plasmon-phonon modes in InAs MP Hasselbeck, D Stalnaker, LA Schlie, TJ Rotter, A Stintz, ... Physical Review B 65 (23), 233203, 2002 | 102 | 2002 |
| Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces PE Hopkins, JC Duda, SP Clark, CP Hains, TJ Rotter, LM Phinney, ... Applied Physics Letters 98 (16), 2011 | 92 | 2011 |
| Orientation dependence of the optical properties in InAs quantum-dash lasers on InP AA Ukhanov, RH Wang, TJ Rotter, A Stintz, LF Lester, PG Eliseev, ... Applied physics letters 81 (6), 981-983, 2002 | 92 | 2002 |
| Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ... Semiconductor Science and Technology 25 (8), 085010, 2010 | 81 | 2010 |
| Optical gain and absorption of quantum dots measured using an alternative segmented contact method YC Xin, Y Li, A Martinez, TJ Rotter, H Su, L Zhang, AL Gray, S Luong, ... IEEE Journal of Quantum Electronics 42 (7), 725-732, 2006 | 78 | 2006 |
| Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90 misfit dislocations A Jallipalli, G Balakrishnan, SH Huang, TJ Rotter, K Nunna, BL Liang, ... Nanoscale research letters 4, 1458-1462, 2009 | 64 | 2009 |
| Point defects in-irradiated n-GaN VV Emtsev, VY Davydov, VV Kozlovskii, VV Lundin, DS Poloskin, ... Semiconductor science and technology 15 (1), 73, 2000 | 61 | 2000 |
| Time-Resolved Linewidth Enhancement Factors in Quantum Dot and Higher-Dimensional Semiconductor Amplifiers Operating at 1.55 AJ Zilkie, J Meier, M Mojahedi, AS Helmy, PJ Poole, P Barrios, D Poitras, ... Journal of Lightwave Technology 26 (11), 1498-1509, 2008 | 59 | 2008 |
| Fabrication of Self-Aligned Enhancement-Mode MOSFETs With Gate Stack D Shahrjerdi, T Rotter, G Balakrishnan, D Huffaker, E Tutuc, SK Banerjee IEEE electron device letters 29 (6), 557-560, 2008 | 57 | 2008 |
| Three color infrared detector using InAs/GaSb superlattices with unipolar barriers N Gautam, M Naydenkov, S Myers, AV Barve, E Plis, T Rotter, LR Dawson, ... Applied Physics Letters 98 (12), 2011 | 55 | 2011 |
| Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice B Klein, N Gautam, E Plis, T Schuler-Sandy, TJ Rotter, S Krishna, ... Journal of vacuum science & technology B 32 (2), 2014 | 54 | 2014 |
| Gallium free type II InAs/InAsxSb1-x superlattice photodetectors T Schuler-Sandy, S Myers, B Klein, N Gautam, P Ahirwar, ZB Tian, ... Applied Physics Letters 101 (7), 2012 | 53 | 2012 |
| Formation of quantum wires and quantum dots on buffer layers grown on InP substrates A Stintz, TJ Rotter, KJ Malloy Journal of crystal growth 255 (3-4), 266-272, 2003 | 53 | 2003 |
| Systematic study of different transitions in high operating temperature quantum dots in a well photodetectors AV Barve, T Rotter, Y Sharma, SJ Lee, SK Noh, S Krishna Applied Physics Letters 97 (6), 2010 | 51 | 2010 |
| Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates NA Jahan, C Hermannstädter, JH Huh, H Sasakura, TJ Rotter, P Ahirwar, ... Journal of Applied Physics 113 (3), 2013 | 46 | 2013 |
| Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors AV Barve, S Sengupta, JO Kim, YD Sharma, S Adhikary, TJ Rotter, SJ Lee, ... Applied Physics Letters 99 (19), 2011 | 38 | 2011 |
| Multi-watt 1.25 µm quantum dot VECSEL AR Albrecht, TJ Rotter, CP Hains, A Stintz, JV Moloney, KJ Malloy, ... Electronics letters 46 (12), 856-857, 2010 | 35 | 2010 |
| InP based quantum dash lasers with 2 µm wavelength TJ Rotter, A Stintz, KJ Malloy IEE Proceedings-Optoelectronics 150 (4), 318-321, 2003 | 33 | 2003 |
Ganesh BalakrishnanProfessor, ECE UNM, Director NM EPSCoRVerified email at unm.edu
