Thomas J Rotter
Thomas J Rotter
Center for High Technology Materials, The University of New Mexico
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Carrier Dynamics of Quantum-Dot, Quantum-Dash, and Quantum-Well Semiconductor Optical Amplifiers Operating at 1.55
AJ Zilkie, J Meier, M Mojahedi, PJ Poole, P Barrios, D Poitras, TJ Rotter, ...
IEEE Journal of Quantum Electronics 43 (11), 982-991, 2007
wavelength InAs quantum dashes grown on a GaAs substrate using a metamorphic buffer layer
G Balakrishnan, S Huang, TJ Rotter, A Stintz, LR Dawson, KJ Malloy, ...
Applied physics letters 84 (12), 2058-2060, 2004
Emission of terahertz radiation from coupled plasmon-phonon modes in InAs
MP Hasselbeck, D Stalnaker, LA Schlie, TJ Rotter, A Stintz, ...
Physical Review B 65 (23), 233203, 2002
Effect of dislocation density on thermal boundary conductance across GaSb/GaAs interfaces
PE Hopkins, JC Duda, SP Clark, CP Hains, TJ Rotter, LM Phinney, ...
Applied Physics Letters 98 (16), 2011
Orientation dependence of the optical properties in InAs quantum-dash lasers on InP
AA Ukhanov, RH Wang, TJ Rotter, A Stintz, LF Lester, PG Eliseev, ...
Applied physics letters 81 (6), 981-983, 2002
Mid-infrared InAs/GaSb strained layer superlattice detectors with nBn design grown on a GaAs substrate
E Plis, JB Rodriguez, G Balakrishnan, YD Sharma, HS Kim, T Rotter, ...
Semiconductor Science and Technology 25 (8), 085010, 2010
Optical gain and absorption of quantum dots measured using an alternative segmented contact method
YC Xin, Y Li, A Martinez, TJ Rotter, H Su, L Zhang, AL Gray, S Luong, ...
IEEE Journal of Quantum Electronics 42 (7), 725-732, 2006
Structural analysis of highly relaxed GaSb grown on GaAs substrates with periodic interfacial array of 90 misfit dislocations
A Jallipalli, G Balakrishnan, SH Huang, TJ Rotter, K Nunna, BL Liang, ...
Nanoscale research letters 4, 1458-1462, 2009
Point defects in-irradiated n-GaN
VV Emtsev, VY Davydov, VV Kozlovskii, VV Lundin, DS Poloskin, ...
Semiconductor science and technology 15 (1), 73, 2000
Time-Resolved Linewidth Enhancement Factors in Quantum Dot and Higher-Dimensional Semiconductor Amplifiers Operating at 1.55
AJ Zilkie, J Meier, M Mojahedi, AS Helmy, PJ Poole, P Barrios, D Poitras, ...
Journal of Lightwave Technology 26 (11), 1498-1509, 2008
Fabrication of Self-Aligned Enhancement-Mode MOSFETs With Gate Stack
D Shahrjerdi, T Rotter, G Balakrishnan, D Huffaker, E Tutuc, SK Banerjee
IEEE electron device letters 29 (6), 557-560, 2008
Three color infrared detector using InAs/GaSb superlattices with unipolar barriers
N Gautam, M Naydenkov, S Myers, AV Barve, E Plis, T Rotter, LR Dawson, ...
Applied Physics Letters 98 (12), 2011
Carrier lifetime studies in midwave infrared type-II InAs/GaSb strained layer superlattice
B Klein, N Gautam, E Plis, T Schuler-Sandy, TJ Rotter, S Krishna, ...
Journal of vacuum science & technology B 32 (2), 2014
Gallium free type II InAs/InAsxSb1-x superlattice photodetectors
T Schuler-Sandy, S Myers, B Klein, N Gautam, P Ahirwar, ZB Tian, ...
Applied Physics Letters 101 (7), 2012
Formation of quantum wires and quantum dots on buffer layers grown on InP substrates
A Stintz, TJ Rotter, KJ Malloy
Journal of crystal growth 255 (3-4), 266-272, 2003
Systematic study of different transitions in high operating temperature quantum dots in a well photodetectors
AV Barve, T Rotter, Y Sharma, SJ Lee, SK Noh, S Krishna
Applied Physics Letters 97 (6), 2010
Temperature dependent carrier dynamics in telecommunication band InAs quantum dots and dashes grown on InP substrates
NA Jahan, C Hermannstädter, JH Huh, H Sasakura, TJ Rotter, P Ahirwar, ...
Journal of Applied Physics 113 (3), 2013
Confinement enhancing barriers for high performance quantum dots-in-a-well infrared detectors
AV Barve, S Sengupta, JO Kim, YD Sharma, S Adhikary, TJ Rotter, SJ Lee, ...
Applied Physics Letters 99 (19), 2011
Multi-watt 1.25 µm quantum dot VECSEL
AR Albrecht, TJ Rotter, CP Hains, A Stintz, JV Moloney, KJ Malloy, ...
Electronics letters 46 (12), 856-857, 2010
InP based quantum dash lasers with 2 µm wavelength
TJ Rotter, A Stintz, KJ Malloy
IEE Proceedings-Optoelectronics 150 (4), 318-321, 2003
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