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A four-terminal, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation
N El-Hinnawy, P Borodulin, B Wagner, MR King, JS Mason, EB Jones, ...
IEEE Electron Device Letters 34 (10), 1313-1315, 2013
1212013
X-ray excited luminescence and local structures in Tb-doped nanocrystals
YL Soo, SW Huang, ZH Ming, YH Kao, GC Smith, E Goldburt, R Hodel, ...
Journal of Applied Physics 83 (10), 5404-5409, 1998
1141998
Cascode power switch topologies
TR McNutt, JV Reichl, HC Heame III, EJ Stewart, SD Van Campen, ...
US Patent 7,719,055, 2010
1042010
A 7.3 THz cut-off frequency, inline, chalcogenide phase-change RF switch using an independent resistive heater for thermal actuation
N El-Hinnawy, P Borodulin, BP Wagner, MR King, JS Mason, EB Jones, ...
2013 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS), 1-4, 2013
992013
Demonstration of a 600-V, 60-A, bidirectional silicon carbide solid-state circuit breaker
DP Urciuoli, V Veliadis, HC Ha, V Lubomirsky
2011 Twenty-Sixth Annual IEEE Applied Power Electronics Conference and …, 2011
822011
Composite nanophosphor screen for detecting radiation
RN Bhargava
US Patent 5,952,665, 1999
761999
Transformation of deep impurities to shallow impurities by quantum confinement
RN Bhargava, V Chhabra, B Kulkarni, JV Veliadis
physica status solidi (b) 210 (2), 621-629, 1998
521998
A 2055-V (at 0.7 mA/cm2) 24-A (at 706 W/cm2) normally On 4H-SiC JFET With 6.8-mm2 active area and blocking-voltage capability reaching the material limit
V Veliadis, M Snook, T McNutt, H Hearne, P Potyraj
IEEE electron device letters 29 (12), 1325-1327, 2008
512008
A 1680-V (at 1 ) 54-A (at 780 ) Normally ON 4H-SiC JFET With 0.143- Active Area
V Veliadis, T McNutt, M Snook, H Hearne, P Potyraj, C Scozzie
IEEE Electron Device Letters 29 (10), 1132-1134, 2008
492008
Controlled agglomeration of Tb-doped nanocrystals studied by x-ray absorption fine structure, x-ray excited luminescence, and photoluminescence
YL Soo, SW Huang, YH Kao, V Chhabra, B Kulkarni, JVD Veliadis, ...
Applied physics letters 75 (16), 2464-2466, 1999
481999
Semiconductor structure for use in a static induction transistor having improved gate-to-drain breakdown voltage
LS Chen, V Veliadis
US Patent 7,372,087, 2008
452008
A 9-kV Normally-on Vertical-Channel SiC JFET for Unipolar Operation
V Veliadis, EJ Stewart, H Hearne, M Snook, A Lelis, C Scozzie
IEEE Electron Device Letters 31 (5), 470-472, 2010
362010
Reliable Operation of SiC JFET Subjected to Over 2.4 Million 1200-V/115-A Hard Switching Events at 150
V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha, ...
IEEE electron device letters 34 (3), 384-386, 2013
332013
Microchannel high resolution x-ray sensor having an integrated photomultiplier
NR Taskar, JVD Veliadis, V Chhabra, B Kulkarni, N Pandit, RN Bhargava, ...
US Patent 6,452,184, 2002
302002
Composite nanophosphor screen for detecting radiation having optically reflective coatings
RN Bhargava, NR Taskar, V Chhabra, JVD Veliadis
US Patent 6,300,640, 2001
292001
Investigation of the photoluminescence-linewidth broadening in periodic multiple narrow asymmetric coupled quantum wells
JVD Veliadis, JB Khurgin, YJ Ding, AG Cui, DS Katzer
Physical Review B 50 (7), 4463, 1994
291994
Mask for use in measuring flare, method of manufacturing the mask, method of identifying flare-affected region on wafer, and method of designing new mask to correct for flare
W Ki, SW Choi, TM Jeong, SY Zinn, WS Han, JM Sohn
US Patent 6,835,507, 2004
282004
Suitability of N-ON recessed implanted gate vertical-channel SiC JFETs for optically triggered 1200 V solid-state circuit breakers
V Veliadis, B Steiner, K Lawson, SB Bayne, D Urciuoli, HC Ha
IEEE Journal of Emerging and Selected Topics in Power Electronics 4 (3), 874-879, 2016
272016
600-V/2-A symmetrical bi-directional power flow using vertical-channel JFETs connected in common source configuration
V Veliadis, D Urciuoli, H Hearne, HC Ha, R Howell, C Scozzie
Materials Science Forum 645, 1147-1150, 2010
272010
Silicon carbide JFET cascode switch for power conditioning applications
T McNutt, V Veliadis, E Stewart, H Hearne, J Reichl, P Oda, ...
2005 IEEE Vehicle Power and Propulsion Conference, 499-506, 2005
272005
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