Néstor Ghenzi

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Diego RubiComisión Nacional de Energía Atómica and CONICET - ArgentinaVerified email at tandar.cnea.gov.ar
Maria Jose SanchezCentro Atomico Bariloche and Instituto BalseiroVerified email at cab.cnea.gov.ar
Enrique MirandaUniversitat Autonoma de BarcelonaVerified email at uab.cat
Luis E. HuesoIkerbasque Research Professor, CIC nanoGUNE (ROR 023ke8y90)Verified email at nanogune.eu
Roger LlopisNanoguneVerified email at nanogune.eu
Jordi SuñéProfessor of Electronics, IEEE Fellow, Universitat Autònoma de BarcelonaVerified email at uab.cat
Federico TeslerParis-Saclay Institute of Neuroscience - CNRS, Paris, FranceVerified email at cnrs.fr
Mariano BarellaUniversity of FribourgVerified email at unifr.ch
Cynthia P. QuinterosCONICET researcher @ San Martín University, ArgentinaVerified email at unsam.edu.ar
Gustavo GimenezMicrosystem division Leader at STAMM BiotechVerified email at stamm.bio
M. KnezGermany OR SpainVerified email at nanogune.eu
Silvina BengióConicetVerified email at cab.cnea.gov.ar
Carlos AchaProfessor at the Physics Dept. - FCEyN - University of Buenos Aires and IFIBA - CONICETVerified email at df.uba.ar
Cheol Seong HwangProfessor, Department of Materials Science and Engineering, Seoul National UniversityVerified email at snu.ac.kr
Yoon Ho JangInter-University Semiconductor Research Center (Seoul National University)Verified email at snu.ac.kr
Taegyun ParkSeoul National UniversityVerified email at snu.ac.kr
Dong Hoon ShinSeoul National UniversityVerified email at snu.ac.kr
Leticia Paula GranjaDepartamento de Física de la Materia Condensada, Gerencia de Investigación y Aplicaciones, Comisión Nacional de Energía Atómica (CNEA) / Instituto de Nanociencia y Nanotecnología, CNEA - CONICETVerified email at tandar.cnea.gov.ar
Joon-Kyu HanAssistant Professor, Sogang UniversityVerified email at sogang.ac.kr
Seung Soo KimsnuVerified email at snu.ac.kr

Néstor Ghenzi

CONICET, Argentina

Verified email at snu.ac.kr

Condensed Matter Physics


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Hysteresis switching loops in Ag-manganite memristive interfaces N Ghenzi, MJ Sánchez, F Gomez-Marlasca, P Levy, MJ Rozenberg Journal of applied physics 107 (9), 2010	47	2010
Tuning the resistive switching properties of TiO2− x films N Ghenzi, MJ Rozenberg, R Llopis, P Levy, LE Hueso, P Stoliar Applied Physics Letters 106 (12), 2015	44	2015
Two resistive switching regimes in thin film manganite memory devices on silicon D Rubi, F Tesler, I Alposta, A Kalstein, N Ghenzi, F Gomez-Marlasca, ... Applied Physics Letters 103 (16), 2013	43	2013
Understanding electroforming in bipolar resistive switching oxides F Gomez-Marlasca, N Ghenzi, MJ Rozenberg, P Levy Applied Physics Letters 98 (4), 2011	39	2011
Understanding electroforming in bipolar resistive switching oxides F Gomez-Marlasca, N Ghenzi, MJ Rozenberg, P Levy Applied Physics Letters 98 (4), 2011	39	2011
Equivalent circuit modeling of the bistable conduction characteristics in electroformed thin dielectric films J Blasco, N Ghenzi, J Suñé, P Levy, E Miranda Microelectronics Reliability 55 (1), 1-14, 2015	29	2015
Nonvolatile multilevel resistive switching memory cell: A transition metal oxide-based circuit P Stoliar, P Levy, MJ Sánchez, AG Leyva, CA Albornoz, ... IEEE Transactions on Circuits and Systems II: Express Briefs 61 (1), 21-25, 2013	28	2013
A compact model for binary oxides-based memristive interfaces N Ghenzi, MJ Sánchez, P Levy Journal of Physics D: Applied Physics 46 (41), 415101, 2013	25	2013
Modeling of the Hysteretic Characteristics of -Based Resistive Switches Using the Generalized Diode Equation J Blasco, N Ghenzi, J Suae, P Levy, E Miranda IEEE Electron Device Letters 35 (3), 390-392, 2014	22	2014
Optimization of resistive switching performance of metal-manganite oxide interfaces by a multipulse protocol N Ghenzi, MJ Sánchez, MJ Rozenberg, P Stoliar, FG Marlasca, D Rubi, ... Journal of Applied Physics 111 (8), 2012	21	2012
Modeling electronic transport mechanisms in metal-manganite memristive interfaces F Gomez-Marlasca, N Ghenzi, AG Leyva, C Albornoz, D Rubi, P Stoliar, ... Journal of Applied Physics 113 (14), 2013	20	2013
Tailoring conductive filaments by electroforming polarity in memristive based TiO2 junctions N Ghenzi, MJ Sánchez, D Rubi, MJ Rozenberg, C Urdaniz, M Weissman, ... Applied Physics Letters 104 (18), 2014	19	2014
Manganite based memristors: Influence of the electroforming polarity on the electrical behavior and radiation hardness D Rubi, A Kalstein, WS Román, N Ghenzi, C Quinteros, E Mangano, ... Thin Solid Films 583, 76-80, 2015	18	2015
Asymmetric pulsing for reliable operation of titanium/manganite memristors F Gomez-Marlasca, N Ghenzi, P Stoliar, MJ Sánchez, MJ Rozenberg, ... Applied Physics Letters 98 (12), 2011	17	2011
Building memristive and radiation hardness TiO2-based junctions N Ghenzi, D Rubi, E Mangano, G Gimenez, J Lell, A Zelcer, P Stoliar, ... Thin Solid Films 550, 683-688, 2014	14	2014
One-transistor one-resistor (1T1R) cell for large-area electronics N Ghenzi, M Rozenberg, L Pietrobon, R Llopis, R Gay, M Beltrán, M Knez, ... Applied Physics Letters 113 (7), 2018	12	2018
Resistive switching in Ag–TiO2 contacts N Ghenzi, P Stoliar, MC Fuertes, FG Marlasca, P Levy Physica B: Condensed Matter 407 (16), 3096-3098, 2012	11	2012
Adaptive threshold in TiO2-based synapses N Ghenzi, M Barella, D Rubi, C Acha Journal of Physics D: Applied Physics 52 (12), 125401, 2019	8	2019
Resistive Switching in Ferromagnetic Thin Films I Alposta, A Kalstein, N Ghenzi, S Bengió, G Zampieri, D Rubi, P Levy IEEE transactions on magnetics 49 (8), 4582-4585, 2013	8	2013
Impact of sub-and supra-threshold switching in the synaptic behavior of TiO2 memristors N Ghenzi, P Levy Microelectronic Engineering 193, 13-17, 2018	4	2018

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