Andrea Padovani
Andrea Padovani
Senior Manager, Applied Materials
Verified email at amat.com
Title
Cited by
Cited by
Year
Metal oxide resistive memory switching mechanism based on conductive filament properties
G Bersuker, DC Gilmer, D Veksler, P Kirsch, L Vandelli, A Padovani, ...
Journal of Applied Physics 110 (12), 124518, 2011
4192011
Physical Mechanisms behind the Field‐Cycling Behavior of HfO2‐Based Ferroelectric Capacitors
M Pešić, FPG Fengler, L Larcher, A Padovani, T Schenk, ED Grimley, ...
Advanced Functional Materials 26 (25), 4601-4612, 2016
3042016
Recommended methods to study resistive switching devices
M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ...
Advanced Electronic Materials 5 (1), 1800143, 2019
2422019
A Physical Model of the Temperature Dependence of the Current Through Stacks
L Vandelli, A Padovani, L Larcher, RG Southwick, WB Knowlton, ...
IEEE Transactions on Electron Devices 58 (9), 2878-2887, 2011
2062011
Metal oxide RRAM switching mechanism based on conductive filament microscopic properties
G Bersuker, DC Gilmer, D Veksler, J Yum, H Park, S Lian, L Vandelli, ...
2010 International Electron Devices Meeting, 19.6. 1-19.6. 4, 2010
1272010
Microscopic Modeling of HfOx RRAM Operations: From Forming to Switching
A Padovani, L Larcher, O Pirrotta, L Vandelli, G Bersuker
IEEE Transactions on electron devices 62 (6), 1998-2006, 2015
1222015
Grain boundary-driven leakage path formation in HfO2 dielectrics
G Bersuker, J Yum, L Vandelli, A Padovani, L Larcher, V Iglesias, M Porti, ...
Solid-State Electronics 65, 146-150, 2011
1122011
Experimental and theoretical study of electrode effects in HfO2 based RRAM
C Cagli, J Buckley, V Jousseaume, T Cabout, A Salaun, H Grampeix, ...
2011 International Electron Devices Meeting, 28.7. 1-28.7. 4, 2011
912011
Breakdown in the metal/high-k gate stack: Identifying the “weak link” in the multilayer dielectric
G Bersuker, D Heh, C Young, H Park, P Khanal, L Larcher, A Padovani, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
822008
A Complete Statistical Investigation of RTN in HfO2-Based RRAM in High Resistive State
FM Puglisi, L Larcher, A Padovani, P Pavan
IEEE Transactions on Electron Devices 62 (8), 2606-2613, 2015
742015
An empirical model for RRAM resistance in low-and high-resistance states
FM Puglisi, L Larcher, G Bersuker, A Padovani, P Pavan
IEEE Electron Device Letters 34 (3), 387-389, 2013
712013
Comprehensive physical modeling of forming and switching operations in HfO2 RRAM devices
L Vandelli, A Padovani, L Larcher, G Broglia, G Ori, M Montorsi, ...
2011 International Electron Devices Meeting, 17.5. 1-17.5. 4, 2011
712011
A Compact Model of Program Window in HfOx RRAM Devices for Conductive Filament Characteristics Analysis
L Larcher, FM Puglisi, P Pavan, A Padovani, L Vandelli, G Bersuker
IEEE Transactions on Electron Devices 61 (8), 2668-2673, 2014
702014
Microscopic modeling of electrical stress-induced breakdown in poly-crystalline hafnium oxide dielectrics
L Vandelli, A Padovani, L Larcher, G Bersuker
IEEE Transactions on Electron Devices 60 (5), 1754-1762, 2013
702013
Random telegraph noise (RTN) in scaled RRAM devices
D Veksler, G Bersuker, L Vandelli, A Padovani, L Larcher, A Muraviev, ...
2013 IEEE International Reliability Physics Symposium (IRPS), MY. 10.1-MY. 10.4, 2013
632013
Charge Transport and Degradation in HfO2 and HfOx Dielectrics
A Padovani, L Larcher, G Bersuker, P Pavan
IEEE electron device letters 34 (5), 680-682, 2013
612013
A microscopic mechanism of dielectric breakdown in SiO2 films: An insight from multi-scale modeling
A Padovani, DZ Gao, AL Shluger, L Larcher
Journal of Applied physics 121 (15), 155101, 2017
602017
Leakage current through the poly-crystalline HfO2: Trap densities at grains and grain boundaries
O Pirrotta, L Larcher, M Lanza, A Padovani, M Porti, M NafrÝa, G Bersuker
Journal of Applied Physics 114 (13), 134503, 2013
582013
Controlling uniformity of RRAM characteristics through the forming process
A Kalantarian, G Bersuker, DC Gilmer, D Veksler, B Butcher, A Padovani, ...
2012 IEEE International Reliability Physics Symposium (IRPS), 6C. 4.1-6C. 4.5, 2012
582012
Linking conductive filament properties and evolution to synaptic behavior of RRAM devices for neuromorphic applications
J Woo, A Padovani, K Moon, M Kwak, L Larcher, H Hwang
IEEE Electron Device Letters 38 (9), 1220-1223, 2017
512017
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