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Joseph Flemish
Joseph Flemish
Senior Director, Techology Development, LUMILEDS, LLC
Verified email at lumileds.com
Title
Cited by
Cited by
Year
High etch rates of SiC in magnetron enhanced SF6 plasmas
GF McLane, JR Flemish
Applied physics letters 68 (26), 3755-3757, 1996
801996
Smooth etching of single crystal 6H‐SiC in an electron cyclotron resonance plasma reactor
JR Flemish, K Xie, JH Zhao
Applied physics letters 64 (17), 2315-2317, 1994
781994
A high-current and high-temperature 6H-SiC thyristor
K Xie, JH Zhao, JR Flemish, T Burke, WR Buchwald, G Lorenzo, H Singh
IEEE Electron Device Letters 17 (3), 142-144, 1996
661996
Low damage and residue‐free dry etching of 6H–SiC using electron cyclotron resonance plasma
K Xie, JR Flemish, JH Zhao, WR Buchwald, L Casas
Applied physics letters 67 (3), 368-370, 1995
651995
Profile and morphology control during etching of SiC using electron cyclotron resonant plasmas
JR Flemish, K Xie
Journal of the Electrochemical Society 143 (8), 2620, 1996
561996
Low hydrogen content silicon nitride films from electron cyclotron resonance plasmas
JR Flemish, RL Pfeffer
Journal of applied physics 74 (5), 3277-3281, 1993
521993
Selective wet etching of GaInP, GaAs, and InP in solutions of HCl, CH 3 COOH, and H 2 O 2
JR Flemish, KA Jones
Journal of The Electrochemical Society 140 (3), 844, 1993
411993
Phosphorus incorporation in plasma deposited diamond films
SN Schauer, JR Flemish, R Wittstruck, MI Landstrass, MA Plano
Applied physics letters 64 (9), 1094-1096, 1994
381994
Raman study of low growth temperature GaAs
TA Gant, H Shen, JR Flemish, L Fotiadis, M Dutta
Applied physics letters 60 (12), 1453-1455, 1992
371992
Silicon carbide thyristors for electric guns
T Burke, K Xie, H Singh, T Podlesak, J Flemish, J Carter, S Schneider, ...
IEEE Transactions on Magnetics 33 (1), 432-437, 1997
361997
Optimization of a photonically controlled microwave switch and attenuator
JR Flemish, RL Haupt
IEEE transactions on microwave theory and techniques 58 (10), 2582-2588, 2010
272010
Growth and characterization of phosphorus doped diamond films
JR Flemish, SN Schauer, R Wittstruck, MI Landstrass, MA Plano
Diamond and Related Materials 3 (4-6), 672-676, 1994
251994
A new silicon‐based photoconductive microwave switch
JR Flemish, HW Kwan, RL Haupt, M Lanagan
Microwave and Optical technology letters 51 (1), 248-252, 2009
242009
Current-induced degradation of nickel ohmic contacts to SiC
BP Downey, JR Flemish, BZ Liu, TE Clark, SE Mohney
Journal of electronic materials 38, 563-568, 2009
232009
Determination of the composition of strained InGaAsP layers on InP substrates using photoreflectance and double‐crystal x‐ray diffractometry
JR Flemish, H Shen, KA Jones, M Dutta, VS Ban
Journal of applied physics 70 (4), 2152-2155, 1991
191991
Reliability of aluminum-bearing ohmic contacts to SiC under high current density
BP Downey, SE Mohney, TE Clark, JR Flemish
Microelectronics Reliability 50 (12), 1967-1972, 2010
182010
Method and apparatus for growing semiconductor heterostructures
KA Jones, JR Flemish, A Tripathi, VS Ban
US Patent 5,254,210, 1993
181993
Adaptive nulling using photoconductive attenuators
RL Haupt, J Flemish, D Aten
IEEE Transactions on Antennas and Propagation 59 (3), 869-876, 2010
172010
Dry Etching of SiC for Advanced Device Applications
JR Flemish, K Xie, GF McLane
MRS Online Proceedings Library 421, 153-164, 1996
171996
Plasma surface pretreatment effects on silicon nitride passivation of AlGaN/GaN HEMTs
DJ Meyer, JR Flemish, JM Redwing
Proc. CS MANTECH Conf, 305-307, 2007
162007
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