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Gali Ádám
Gali Ádám
Wigner Research Centre for Physics, Hungarian Academy of Sciences
Verified email at wigner.mta.hu - Homepage
Title
Cited by
Cited by
Year
Coherent control of single spins in silicon carbide at room temperature
M Widmann, SY Lee, T Rendler, NT Son, H Fedder, S Paik, LP Yang, ...
Nature materials 14 (2), 164-168, 2015
5822015
Properties of nitrogen-vacancy centers in diamond: the group theoretic approach
JR Maze, A Gali, E Togan, Y Chu, A Trifonov, E Kaxiras, MD Lukin
New Journal of Physics 13 (2), 025025, 2011
5452011
A silicon carbide room-temperature single-photon source
S Castelletto, BC Johnson, V Ivády, N Stavrias, T Umeda, A Gali, ...
Nature materials 13 (2), 151-156, 2014
5442014
Electronic structure of the silicon vacancy color center in diamond
C Hepp, T Müller, V Waselowski, JN Becker, B Pingault, H Sternschulte, ...
Physical Review Letters 112 (3), 036405, 2014
4152014
Ab initio supercell calculations on nitrogen-vacancy center in diamond: Electronic structure and hyperfine tensors
A Gali, M Fyta, E Kaxiras
Physical Review B 77 (15), 155206, 2008
3992008
Electrically driven single-photon source at room temperature in diamond
N Mizuochi, T Makino, H Kato, D Takeuchi, M Ogura, H Okushi, M Nothaft, ...
Nature photonics 6 (5), 299-303, 2012
3532012
Accurate defect levels obtained from the HSE06 range-separated hybrid functional
P Deák, B Aradi, T Frauenheim, E Janzén, A Gali
Physical Review B 81 (15), 153203, 2010
3242010
Molecular-sized fluorescent nanodiamonds
II Vlasov, AA Shiryaev, T Rendler, S Steinert, SY Lee, D Antonov, M Vörös, ...
Nature nanotechnology 9 (1), 54-58, 2014
2952014
Optically controlled switching of the charge state of a single nitrogen-vacancy center in diamond at cryogenic temperatures
P Siyushev, H Pinto, M Vörös, A Gali, F Jelezko, J Wrachtrup
Physical review letters 110 (16), 167402, 2013
2652013
Theory of spin-conserving excitation of the N− V− center in diamond
A Gali, E Janzén, P Deák, G Kresse, E Kaxiras
Physical review letters 103 (18), 186404, 2009
2472009
Divacancy in 4h-sic
NT Son, P Carlsson, J Ul Hassan, E Janzén, T Umeda, J Isoya, A Gali, ...
Physical review letters 96 (5), 055501, 2006
2472006
Direct correlation of crystal structure and optical properties in wurtzite/zinc-blende GaAs nanowire heterostructures
M Heiss, S Conesa-Boj, J Ren, HH Tseng, A Gali, A Rudolph, E Uccelli, ...
Physical Review B 83 (4), 045303, 2011
2462011
Dark states of single nitrogen-vacancy centers in diamond unraveled by single shot NMR
G Waldherr, J Beck, M Steiner, P Neumann, A Gali, T Frauenheim, ...
Physical review letters 106 (15), 157601, 2011
2312011
Formation of NV centers in diamond: A theoretical study based on calculated transitions and migration of nitrogen and vacancy related defects
P Deák, B Aradi, M Kaviani, T Frauenheim, A Gali
Physical review B 89 (7), 075203, 2014
2212014
Electrically and mechanically tunable electron spins in silicon carbide color centers
AL Falk, PV Klimov, BB Buckley, V Ivády, IA Abrikosov, G Calusine, ...
Physical review letters 112 (18), 187601, 2014
2022014
Single-photon emitting diode in silicon carbide
A Lohrmann, N Iwamoto, Z Bodrog, S Castelletto, T Ohshima, TJ Karle, ...
Nature communications 6 (1), 7783, 2015
2012015
Color centers in hexagonal boron nitride monolayers: a group theory and ab initio analysis
M Abdi, JP Chou, A Gali, MB Plenio
ACS Photonics 5 (5), 1967-1976, 2018
1982018
Isolated spin qubits in SiC with a high-fidelity infrared spin-to-photon interface
DJ Christle, PV Klimov, CF de las Casas, K Szász, V Ivády, ...
Physical Review X 7 (2), 021046, 2017
1982017
Defects in as the possible origin of near interface traps in the system: A systematic theoretical study
JM Knaup, P Deák, T Frauenheim, A Gali, Z Hajnal, WJ Choyke
Physical Review B 72 (11), 115323, 2005
1852005
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
R Nagy, M Niethammer, M Widmann, YC Chen, P Udvarhelyi, C Bonato, ...
Nature communications 10 (1), 1-8, 2019
1832019
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