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S. Lawrence Selvaraj
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Breakdown enhancement of AlGaN/GaN HEMTs on 4-in silicon by improving the GaN quality on thick buffer layers
SL Selvaraj, T Suzue, T Egawa
IEEE electron device letters 30 (6), 587-589, 2009
2682009
Buffer thickness contribution to suppress vertical leakage current with high breakdown field (2.3 MV/cm) for GaN on Si
IB Rowena, SL Selvaraj, T Egawa
IEEE Electron Device Letters 32 (11), 1534-1536, 2011
1652011
1.4-kV breakdown voltage for AlGaN/GaN high-electron-mobility transistors on silicon substrate
SL Selvaraj, A Watanabe, A Wakejima, T Egawa
IEEE electron device letters 33 (10), 1375-1377, 2012
1212012
Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa
Applied physics express 4 (8), 084101, 2011
752011
AlN∕ AlGaN∕ GaN metal-insulator-semiconductor high-electron-mobility transistor on 4in. Silicon substrate for high breakdown characteristics
SL Selvaraj, T Ito, Y Terada, T Egawa
Applied physics letters 90 (17), 2007
602007
III-Nitride High Electron Mobility Transistor Structures and Methods for Fabrication of Same
L Yuan, PGQ Lo, H Sun, KB Lee, W Wang, SL Selvaraj
US Patent App. 14/389,043, 2015
512015
Effect of GaN buffer layer growth pressure on the device characteristics of AlGaN/GaN high-electron-mobility transistors on Si
J Selvaraj, SL Selvaraj, T Egawa
Japanese Journal of Applied Physics 48 (12R), 121002, 2009
482009
High power SiC inverter module packaging solutions for junction temperature over 220° C
DRM Woo, HH Yuan, JAJ Li, HS Ling, LJ Bum, Z Songbai, Z Hengyun, ...
2014 IEEE 16th Electronics Packaging Technology Conference (EPTC), 31-35, 2014
392014
Influence of deep-pits on the device characteristics of metal-organic chemical vapor deposition grown AlGaN/GaN high-electron mobility transistors on silicon substrate
SL Selvaraj, A Watanabe, T Egawa
Applied Physics Letters 98 (25), 2011
382011
Influence of ammonia in the deposition process of SiN on the performance of SiN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistors on 4-in. Si (111)
S Arulkumaran, LZ Hong, NG Ing, SL Selvaraj, T Egawa
Applied Physics Express 2 (3), 031001, 2009
372009
Applied Physics Express
SL Selvaraj, T Suzue, T Egawa
Applied Physics Express 2, 111005, 2009
292009
Design and characterization of micro-LED matrix display with heterogeneous integration of GaN and BCD technologies
MY Soh, WX Ng, TH Teo, SL Selvaraj, L Peng, D Disney, Q Zou, KS Yeo
IEEE Transactions on Electron Devices 66 (10), 4221-4227, 2019
272019
Enhancement of drain current density by inserting 3nm Al layer in the gate of AlGaN∕ GaN high-electron-mobility transistors on 4in. silicon
SL Selvaraj, T Egawa
Applied physics letters 89 (19), 2006
272006
On-chip thin film inductor for high frequency DC-DC power conversion applications
SL Selvaraj, M Haug, CS Cheng, D Dinulovic, L Peng, K El Shafey, Z Ali, ...
2020 IEEE Applied Power Electronics Conference and Exposition (APEC), 176-180, 2020
252020
On the effects of gate-recess etching in current-collapse of different cap layers grown AlGaN/GaN high-electron-mobility transistors
S Arulkumaran, T Egawa, L Selvaraj, H Ishikawa
Japanese journal of applied physics 45 (3L), L220, 2006
252006
Suppression of Gate Leakage and Enhancement of Breakdown Voltage Using Thermally Oxidized Al Layer as Gate Dielectric for AlGaN/GaN Metal–Oxide–Semiconductor High-Electron …
JJ Freedsman, T Kubo, SL Selvaraj, T Egawa
Japanese journal of applied physics 50 (4S), 04DF03, 2011
242011
Influence of deep pits on the breakdown of metalorganic chemical vapor deposition grown AlGaN/GaN high electron mobility transistors on silicon
SL Selvaraj, T Suzue, T Egawa
Applied Physics Express 2 (11), 111005, 2009
182009
Effect of carbon doping and crystalline quality on the vertical breakdown characteristics of GaN layers grown on 200-mm silicon substrates
WZ Wang, SL Selvaraj, KT Win, SB Dolmanan, T Bhat, N Yakovlev, ...
Journal of Electronic Materials 44, 3272-3276, 2015
172015
MOCVD grown normally-OFF type AlGaN/GaN HEMTs on 4 inch Si using p-InGaN cap layer with high breakdown
SL Selvaraj, K Nagai, T Egawa
68th Device Research Conference, 135-136, 2010
172010
Influence of growth parameters and thickness of AlN spacer on electrical properties of AlGaN/AlN/GaN high-electron-mobility transistors grown on 4-inch Si substrate
S Tan, T Suzue, SL Selvaraj, T Egawa
Japanese Journal of Applied Physics 48 (11R), 111002, 2009
172009
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