| GaN-based power devices: Physics, reliability, and perspectives M Meneghini, C De Santi, I Abid, M Buffolo, M Cioni, RA Khadar, L Nela, ... Journal of Applied Physics 130 (18), 181101, 2021 | 259 | 2021 |
| Highly sensitive active pixel image sensor array driven by large-area bilayer MoS2 transistor circuitry H Seongin, N Zagni, S Choo, N Liu, S Baek, A Bala, H Yoo, BH Kang, ... Nature Communications 12, 3559, 2021 | 105 | 2021 |
| Random telegraph noise in resistive random access memories: Compact modeling and advanced circuit design FM Puglisi, N Zagni, L Larcher, P Pavan IEEE Transactions on Electron Devices 65 (7), 2964-2972, 2018 | 77 | 2018 |
| “Hole Redistribution” Model Explaining the Thermally Activated RON Stress/Recovery Transients in Carbon-Doped AlGaN/GaN Power MIS-HEMTs N Zagni, A Chini, FM Puglisi, M Meneghini, G Meneghesso, E Zanoni, ... IEEE Transactions on Electron Devices 68 (2), 697-703, 2021 | 47 | 2021 |
| Halide Perovskite High-k Field Effect Transistors with Dynamically Reconfigurable Ambipolarity ND Canicoba, N Zagni, F Liu, G McCuistian, K Fernando, H Bellezza, ... ACS Materials Letters 1 (6), 633-640, 2019 | 36 | 2019 |
| Partial Recovery of Dynamic RON Versus OFF-State Stress Voltage in p-GaN Gate AlGaN/GaN Power HEMTs M Cioni, N Zagni, F Iucolano, M Moschetti, G Verzellesi, A Chini IEEE Transactions on Electron Devices 68 (10), 4862 - 4868, 2021 | 28 | 2021 |
| Two-dimensional MoS2 negative capacitor transistors for enhanced (super-Nernstian) signal-to-noise performance of next-generation nano biosensors N Zagni, P Pavan, MA Alam Applied Physics Letters 114 (23), 233102, 2019 | 27 | 2019 |
| Electric Field and Self-Heating Effects on the Emission Time of Iron Traps in GaN HEMTs M Cioni, N Zagni, L Selmi, G Meneghesso, M Meneghini, E Zanoni, ... IEEE Transactions on Electron Devices 68 (7), 3325-3332, 2021 | 24 | 2021 |
| Energy-efficient logic-in-memory I-bit full adder enabled by a physics-based RRAM compact model FM Puglisi, L Pacchioni, N Zagni, P Pavan 2018 48th European Solid-State Device Research Conference (ESSDERC), 50-53, 2018 | 23 | 2018 |
| The Role of Carbon Doping on Breakdown, Current Collapse and Dynamic RON Recovery in AlGaN/GaN High Electron Mobility Transistors on Semi‐Insulating SiC Substrates N Zagni, A Chini, FM Puglisi, P Pavan, G Verzellesi physica status solidi (a) 217, 1900762, 2019 | 21* | 2019 |
| A memory window expression to evaluate the endurance of ferroelectric FETs N Zagni, P Pavan, MA Alam Applied Physics Letters 117 (15), 152901, 2020 | 20 | 2020 |
| Insights into the off-state breakdown mechanisms in power GaN HEMTs N Zagni, FM Puglisi, P Pavan, A Chini, G Verzellesi Microelectronics Reliability, 113374, 2019 | 19 | 2019 |
| The impact of interface and border traps on current–voltage, capacitance–voltage, and split‐CV mobility measurements in InGaAs MOSFETs P Pavan, N Zagni, FM Puglisi, A Alian, AVY Thean, N Collaert, ... physica status solidi (a) 214 (3), 1600592, 2017 | 18 | 2017 |
| Trap Dynamics Model Explaining the RON Stress/Recovery Behavior in Carbon-Doped Power AlGaN/GaN MOS-HEMTs N Zagni, A Chini, FM Puglisi, P Pavan, M Meneghini, G Meneghesso, ... IEEE 2020 International Reliability Physics Symposium (IRPS), 1-5, 2020 | 16 | 2020 |
| The effects of carbon on the bidirectional threshold voltage instabilities induced by negative gate bias stress in GaN MIS-HEMTs N Zagni, A Chini, FM Puglisi, P Pavan, G Verzellesi Journal of Computational Electronics 19 (4), 1555-1563, 2020 | 16 | 2020 |
| Modelling nanoscale n-MOSFETs with III-V compound semiconductor channels: From advanced models for band structures, electrostatics and transport to TCAD L Selmi, E Caruso, S Carapezzi, M Visciarelli, E Gnani, N Zagni, P Pavan, ... 2017 IEEE International Electron Devices Meeting (IEDM), 13.4. 1-13.4. 4, 2017 | 13 | 2017 |
| Threshold voltage statistical variability and its sensitivity to critical geometrical parameters in ultrascaled InGaAs and silicon FETs N Zagni, FM Puglisi, G Verzellesi, P Pavan IEEE Transactions on Electron Devices 64 (11), 4607-4614, 2017 | 13 | 2017 |
| On the Modeling of the Donor/Acceptor Compensation Ratio in Carbon-Doped GaN to Univocally Reproduce Breakdown Voltage and Current Collapse in Lateral GaN Power HEMTs N Zagni, A Chini, FM Puglisi, P Pavan, G Verzellesi Micromachines 12 (6), 709, 2021 | 12 | 2021 |
| Evaluation of VTH and RON Drifts during Switch-Mode Operation in Packaged SiC MOSFETs M Cioni, A Bertacchini, A Mucci, N Zagni, G Verzellesi, P Pavan, A Chini Electronics 10 (4), 441, 2021 | 11 | 2021 |
| Mechanisms Underlying the Bidirectional VT Shift After Negative-Bias Temperature Instability Stress in Carbon-Doped Fully Recessed AlGaN/GaN MIS-HEMTs N Zagni, M Cioni, A Chini, F Iucolano, FM Puglisi, P Pavan, G Verzellesi IEEE Transactions on Electron Devices 68 (5), 2564-2567, 2021 | 11 | 2021 |
Giovanni VerzellesiProfessor of Electronics, University of Modena and Reggio Emilia, ItalyVerified email at unimore.it
