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Francis Kub
Francis Kub
Naval Research Laboratory
Verified email at ieee.org
Title
Cited by
Cited by
Year
Advanced methods for making semiconductor devices by low temperature direct bonding
FJ Kub, V Temple, K Hobart, J Neilson
US Patent 6,153,495, 2000
4272000
Method for fabricating singe crystal materials over CMOS devices
FJ Kub, KD Hobart
US Patent 6,242,324, 2001
4242001
Diamond on III-nitride device
FJ Kub, TJ Anderson, VD Wheeler, AD Koehler, KD Hobart
US Patent 10,002,958, 2018
3382018
Method of producing a thin silicon-on-insulator layer
DJ Godbey, HL Hughes, FJ Kub
US Patent 5,013,681, 1991
2831991
Fabrication ultra-thin bonded semiconductor layers
FJ Kub, KD Hobart
US Patent 6,323,108, 2001
2562001
Single-crystal material on non-single-crystalline substrate
FJ Kub, KD Hobart
US Patent 6,328,796, 2001
1862001
Film on Graphene on a Substrate and Method and Devices Therefor
F Kub, T Anderson, M Mastro
US Patent App. 13/310,347, 2012
1852012
Method for making piezoelectric resonator and surface acoustic wave device using hydrogen implant layer splitting
FJ Kub, KD Hobart
US Patent 6,767,749, 2004
1852004
Wafer bonding of thinned electronic materials and circuits to high performance substrates
FJ Kub, KD Hobart
US Patent 7,535,100, 2009
1812009
Method of manufacturing a semiconductor device having a thin GaN material directly bonded to an optimized substrate
F Kub, K Hobart
US Patent App. 09/964,546, 2003
1572003
Programmable analog vector-matrix multipliers
FJ Kub, KK Moon, IA Mack, FM Long
IEEE Journal of Solid-State Circuits 25 (1), 207-214, 1990
1411990
Multicycle rapid thermal annealing technique and its application for the electrical activation of Mg implanted in GaN
BN Feigelson, TJ Anderson, M Abraham, JA Freitas, JK Hite, CR Eddy, ...
Journal of crystal growth 350 (1), 21-26, 2012
1302012
Electronic device with composite substrate
FJ Kub, KD Hobart
US Patent 6,497,763, 2002
1272002
Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides
KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ...
Journal of Electronic Materials 29, 897-900, 2000
1152000
Activation of Mg implanted in GaN by multicycle rapid thermal annealing
TJ Anderson, BN Feigelson, FJ Kub, MJ Tadjer, KD Hobart, MA Mastro, ...
Electronics Letters 50 (3), 197-198, 2014
1112014
Strain relaxation of SiGe islands on compliant oxide
H Yin, R Huang, KD Hobart, Z Suo, TS Kuan, CK Inoki, SR Shieh, ...
Journal of Applied Physics 91 (12), 9716-9722, 2002
1082002
Graphene on semiconductor detector
FJ Kub, T Anderson, KD Hobart
US Patent 8,872,159, 2014
942014
Gate after diamond transistor
F Kub, K Hobart
US Patent 8,039,301, 2011
942011
Substrate-dependent effects on the response of AlGaN/GaN HEMTs to 2-MeV proton irradiation
TJ Anderson, AD Koehler, JD Greenlee, BD Weaver, MA Mastro, JK Hite, ...
IEEE electron device letters 35 (8), 826-828, 2014
922014
Method for the reduction of graphene film thickness and the removal and transfer of epitaxial graphene films from SiC substrates
JD Caldwell, KD Hobart, T Anderson, FJ Kub
US Patent 8,753,468, 2014
892014
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