| Investigations of HfO2∕ AlGaN∕ GaN metal-oxide-semiconductor high electron mobility transistors C Liu, EF Chor, LS Tan Applied physics letters 88 (17), 2006 | 247 | 2006 |
| Pulsed laser annealing of Be-implanted GaN HT Wang, LS Tan, EF Chor Journal of applied physics 98 (9), 2005 | 244 | 2005 |
| Enhanced device performance of AlGaN/GaN HEMTs using HfO2 high-k dielectric for surface passivation and gate oxide C Liu, EF Chor, LS Tan Semiconductor science and technology 22 (5), 522, 2007 | 210 | 2007 |
| End of range (EOR) secondary defect engineering using substitutional carbon doping CF Tan, J Liu, HJ Lee, B Indajang, EF Chor, SY Ong US Patent 7,109,099, 2006 | 102 | 2006 |
| Embedded polysilicon gate MOSFET L Chan, CL Cha, EF Chor, G Hao, TK Lee US Patent 6,252,277, 2001 | 83 | 2001 |
| A propagation-delay expression and its application to the optimization of polysilicon emitter ECL processes EF Chor, A Brunnschweiler, P Ashburn IEEE journal of solid-state circuits 23 (1), 251-259, 1988 | 71 | 1988 |
| Transparent indium zinc oxide ohmic contact to phosphor-doped n-type zinc oxide G Hu, B Kumar, H Gong, EF Chor, P Wu Applied physics letters 88 (10), 2006 | 67 | 2006 |
| Tuning the Schottky barrier height of nickel silicide on p-silicon by aluminum segregation M Sinha, EF Chor, YC Yeo Applied Physics Letters 92 (22), 2008 | 58 | 2008 |
| Properties of p-type and n-type ZnO influenced by P concentration G Hu, H Gong, EF Chor, P Wu Applied physics letters 89 (25), 2006 | 57 | 2006 |
| Electrical characterization and metallurgical analysis of Pd-containing multilayer contacts on GaN EF Chor, D Zhang, H Gong, GL Chen, TYF Liew Journal of Applied Physics 90 (3), 1242-1249, 2001 | 55 | 2001 |
| Emitter resistance of arsenic-and phosphorus-doped polysilicon emitter transistors EF Chor, P Ashburn, A Brunnschweiler IEEE electron device letters 6 (10), 516-518, 1985 | 51 | 1985 |
| Electrical characterization, metallurgical investigation, and thermal stability studies of (Pd, Ti, Au)-based ohmic contacts EF Chor, D Zhang, H Gong, WK Chong, SY Ong Journal of Applied Physics 87 (5), 2437-2444, 2000 | 44 | 2000 |
| Improved electrical performance and thermal stability of HfO2/Al2O3 bilayer over HfO2 gate dielectric AlGaN/GaN MIS–HFETs F Tian, EF Chor Journal of the Electrochemical Society 157 (5), H557, 2010 | 33 | 2010 |
| Composite step-graded collector of InP/InGaAs/InP DHBT for minimised carrier blocking EF Chor, CJ Peng Electronics Letters 32 (15), 1409-1410, 1996 | 31 | 1996 |
| Metallurgical stability of ohmic contacts on thin base InP/InGaAs/InP HBT's EF Chor, RJ Malik, RA Hamm, R Ryan IEEE Electron Device Letters 17 (2), 62-64, 1996 | 31 | 1996 |
| Mechanisms of ohmic contact formation and carrier transport of low temperature annealed Hf/Al/Ta on In0. 18Al0. 82N/GaN-on-Si Y Liu, SP Singh, LM Kyaw, MK Bera, YJ Ngoo, HR Tan, S Tripathy, GQ Lo, ... ECS Journal of Solid State Science and Technology 4 (2), P30, 2014 | 28 | 2014 |
| Structural and electrical characterizations of the pulsed-laser-deposition-grown Sc2O3∕ GaN heterostructure C Liu, EF Chor, LS Tan, Y Dong Applied physics letters 88 (22), 2006 | 28 | 2006 |
| Strong low-frequency noise in polysilicon emitter bipolar transistors with interfacial oxide due to fluctuations in tunneling probabilities WS Lau, EF Chor, CSFCS Foo, WCKWC Khoong Japanese journal of applied physics 31 (8A), L1021, 1992 | 28 | 1992 |
| Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage Y Liu, SP Singh, YJ Ngoo, LM Kyaw, MK Bera, QQ Lo, EF Chor Journal of Vacuum Science & Technology B 32 (3), 2014 | 26 | 2014 |
| Alternative (Pd,Ti,Au) contacts to (Pt,Ti,Au) contacts for EF Chor, WK Chong, CH Heng Journal of applied physics 84 (5), 2977-2979, 1998 | 26 | 1998 |
