| Thermal stability and reliability of nonalloyed ohmic contacts on thin base InP/InGaAs/InP HBTs EF Chor, RJ Malik, RA Hamm, RW Ryan Compound Semiconductors 1995, Proceedings of the Twenty-Second INT Symposium …, 2020 | | 2020 |
| High current drive InP/InGaAs/InP DHBT with a composite step-graded collector EF Chor, CJ Peng Compound Semiconductors 1996, Proceedings of the Twenty-Third INT Symposium …, 2020 | | 2020 |
| Annealing Pressure and Ambient Dependent RuOx Schottky Contacts on InAlN/AlN/GaN-on-Si (111) Heterostructure LM Kyaw, Y Liu, MY Lai, TN Bhat, HR Tan, PC Lim, S Tripathy, EF Chor ECS Journal of Solid State Science and Technology 5 (2), Q17, 2015 | | 2015 |
| Channel temperature measurements of InxAl1− xN/GaN high electron mobility transistors on Si (111) using optical spectroscopy LM Kyaw, LK Bera, TN Bhat, Y Liu, HR Tan, SB Dolmanan, EF Chor, ... Journal of Vacuum Science & Technology B 33 (5), 2015 | | 2015 |
| Influence of PECVD deposited SiNx passivation layer thickness on In0. 18Al0. 82N/GaN/Si HEMT SP Singh, Y Liu, YJ Ngoo, LM Kyaw, MK Bera, SB Dolmanan, S Tripathy, ... Journal of Physics D: Applied Physics 48 (36), 365104, 2015 | 12 | 2015 |
| Effects of Annealing Pressure and Ambient on Thermally Robust RuOx Schottky Contacts on InAlN/AlN/GaN-on-Si (111) Heterostructure LM Kyaw, Y Liu, MY Lai, TN Bhat, HR Tan, PC Lim, S Tripathy, EF Chor ECS Transactions 66 (1), 249, 2015 | 1 | 2015 |
| Mechanisms of ohmic contact formation and carrier transport of low temperature annealed Hf/Al/Ta on In0. 18Al0. 82N/GaN-on-Si Y Liu, SP Singh, LM Kyaw, MK Bera, YJ Ngoo, HR Tan, S Tripathy, GQ Lo, ... ECS Journal of Solid State Science and Technology 4 (2), P30, 2014 | 28 | 2014 |
| Probing channel temperature profiles in Al {sub x} Ga {sub 1− x} N/GaN high electron mobility transistors on 200 mm diameter Si (111) by optical spectroscopy LK Bera, SB Dolmanan, HR Tan, TN Bhat, Y Liu, MK Bera, SP Singh, ... Applied Physics Letters 105 (7), 2014 | | 2014 |
| Probing channel temperature profiles in AlxGa1− xN/GaN high electron mobility transistors on 200 mm diameter Si (111) by optical spectroscopy LM Kyaw, LK Bera, Y Liu, MK Bera, SP Singh, SB Dolmanan, HR Tan, ... Applied Physics Letters 105 (7), 2014 | 5 | 2014 |
| Positive threshold-voltage shift of Y2O3 gate dielectric InAlN/GaN-on-Si (111) MOSHEMTs with respect to HEMTs MK Bera, Y Liu, LM Kyaw, YJ Ngoo, SP Singh, EF Chor ECS Journal of Solid State Science and Technology 3 (6), Q120, 2014 | 17 | 2014 |
| Low thermal budget Hf/Al/Ta ohmic contacts for InAlN/GaN-on-Si HEMTs with enhanced breakdown voltage Y Liu, SP Singh, YJ Ngoo, LM Kyaw, MK Bera, QQ Lo, EF Chor Journal of Vacuum Science & Technology B 32 (3), 2014 | 26 | 2014 |
| Low thermal budget Au-free Hf-based ohmic contacts on InAlN/GaN heterostructures Y Liu, LM Kyaw, MK Bera, SP Singh, YJ Ngoo, GQ Lo, EF Chor ECS Transactions 61 (4), 319, 2014 | 3 | 2014 |
| Fabrication and Performance of InAlN/GaN-on-Si MOSHEMTs with LaAlO3 Gate Dielectric Using Gate-First CMOS Compatible Process at Low Thermal Budget MK Bera, Y Liu, LM Kyaw, YJ Ngoo, SP Singh, EF Chor ECS Transactions 61 (4), 271, 2014 | | 2014 |
| Silicon Nitride Thickness Dependent Electrical Properties of InAlN/GaN Heterostructures SP Singh, Y Liu, LM Kyaw, YJ Ngoo, MK Bera, SB Dolmanan, S Tripathy, ... ECS Transactions 61 (4), 215, 2014 | 1 | 2014 |
| InxAl1-xN/AlN/GaN high electron mobility transistor structures on 200 mm diameter Si (111) substrates with Au-free device processing S Tripathy, LM Kyaw, SB Dolmanan, YJ Ngoo, Y Liu, MK Bera, SP Singh, ... ECS Journal of Solid State Science and Technology 3 (5), Q84, 2014 | 22 | 2014 |
| Thermally robust RuOx Schottky diodes and HEMTs on III‐nitrides LM Kyaw, AA Saju, Y Liu, MK Bera, SP Singh, S Tripathy, EF Chor physica status solidi (c) 11 (3‐4), 883-886, 2014 | 7 | 2014 |
| Influence of RuOx gate thermal annealing on electrical characteristics of AlxGa1-xN/GaN HEMTs on 200-mm silicon LM Kyaw, SB Dolmanan, MK Bera, Y Liu, HR Tan, TN Bhat, Y Dikme, ... ECS Solid State Letters 3 (2), Q5, 2013 | 7 | 2013 |
| Thickness Dependent Electrical Characteristics of InAlN/GaN-On-Si MOSHEMTs with Y2O3 Gate Dielectric and Au-Free Ohmic Contact MK Bera, Y Liu, LM Kyaw, YJ Ngoo, EF Chor ECS Transactions 53 (2), 65, 2013 | 4 | 2013 |
| Gold-Free InAlN/GaN Schottky Gate HEMT On Si (111) Substrate with ZrO2 Passivation LM Kyaw, Y Liu, MK Bera, YJ Ngoo, S Tripathy, EF Chor ECS Transactions 53 (2), 75, 2013 | 2 | 2013 |
| Low resistivity Hf/Al/Ni/Au ohmic contact scheme to n-type GaN Y Liu, MK Bera, LM Kyaw, GQ Lo, EF Chor World Academy of Science, Engineering and Technology, International Journal …, 2012 | 5 | 2012 |
