| A new empirical nonlinear model for HEMT and MESFET devices I Angelov, H Zirath, N Rosman IEEE Transactions on Microwave Theory and Techniques 40 (12), 2258-2266, 1992 | 805 | 1992 |
| Accurate small-signal modeling of HFET's for millimeter-wave applications N Rorsman, M Garcia, C Karlsson, H Zirath IEEE Transactions on Microwave Theory and Techniques 44 (3), 432-437, 1996 | 211 | 1996 |
| An empirical table-based FET model I Angelov, N Rorsman, J Stenarson, M Garcia, H Zirath IEEE Transactions on Microwave Theory and Techniques 47 (12), 2350-2357, 1999 | 207 | 1999 |
| Cryogenic wide-band ultra-low-noise IF amplifiers operating at ultra-low DC power N Wadefalk, A Mellberg, I Angelov, ME Barsky, S Bui, E Choumas, ... IEEE Transactions on Microwave Theory and Techniques 51 (6), 1705-1711, 2003 | 178 | 2003 |
| On the large-signal modelling of AlGaN/GaN HEMTs and SiC MESFETs I Angelov, V Desmaris, K Dynefors, PA Nilsson, N Rorsman, H Zirath European Gallium Arsenide and Other Semiconductor Application Symposium …, 2005 | 133 | 2005 |
| A wideband and compact GaN MMIC Doherty amplifier for microwave link applications D Gustafsson, JC Cahuana, D Kuylenstierna, I Angelov, N Rorsman, ... IEEE Transactions on Microwave Theory and Techniques 61 (2), 922-930, 2013 | 123 | 2013 |
| Large-signal modelling and comparison of AlGaN/GaN HEMTs and SiC MESFETs I Angelov, K Andersson, D Schreurs, D Xiao, N Rorsman, V Desmaris, ... 2006 Asia-Pacific Microwave Conference, 279-282, 2006 | 123 | 2006 |
| Electrical properties, microstructure, and thermal stability of Ta-based ohmic contacts annealed at low temperature for GaN HEMTs A Malmros, H Blanck, N Rorsman Semiconductor science and technology 26 (7), 075006, 2011 | 118 | 2011 |
| Investigation of the interface between silicon nitride passivations and AlGaN/AlN/GaN heterostructures by C (V) characterization of metal-insulator-semiconductor … M Fagerlind, F Allerstam, EÖ Sveinbjörnsson, N Rorsman, ... Journal of Applied Physics 108 (1), 2010 | 112 | 2010 |
| A GaN–SiC hybrid material for high-frequency and power electronics JT Chen, J Bergsten, J Lu, E Janzén, M Thorsell, L Hultman, N Rorsman, ... Applied Physics Letters 113 (4), 2018 | 102 | 2018 |
| Fabrication and characterization of field-plated buried-gate SiC MESFETs K Andersson, M Sudow, PA Nilsson, E Sveinbjornsson, H Hjelmgren, ... IEEE electron device letters 27 (7), 573-575, 2006 | 94 | 2006 |
| Comparison of the DC and microwave performance of AlGaN/GaN HEMTs grown on SiC by MOCVD with Fe-doped or unintentionally doped GaN buffer layers V Desmaris, M Rudzinski, N Rorsman, PR Hageman, PK Larsen, H Zirath, ... IEEE Transactions on electron devices 53 (9), 2413-2417, 2006 | 85 | 2006 |
| Dispersive effects in microwave AlGaN/AlN/GaN HEMTs with carbon-doped buffer S Gustafsson, JT Chen, J Bergsten, U Forsberg, M Thorsell, E Janzén, ... IEEE Transactions on Electron Devices 62 (7), 2162-2169, 2015 | 82 | 2015 |
| An AlGaN/GaN HEMT-based microstrip MMIC process for advanced transceiver design M Sudow, M Fagerlind, M Thorsell, K Andersson, N Billstrom, PÅ Nilsson, ... IEEE Transactions on Microwave Theory and Techniques 56 (8), 1827-1833, 2008 | 80 | 2008 |
| Electron trapping in extended defects in microwave AlGaN/GaN HEMTs with carbon-doped buffers J Bergsten, M Thorsell, D Adolph, JT Chen, O Kordina, ... IEEE Transactions on Electron Devices 65 (6), 2446-2453, 2018 | 77 | 2018 |
| Application relevant evaluation of trapping effects in AlGaN/GaN HEMTs with Fe-doped buffer O Axelsson, S Gustafsson, H Hjelmgren, N Rorsman, H Blanck, ... IEEE Transactions on Electron Devices 63 (1), 326-332, 2015 | 76 | 2015 |
| Oxygen ion implantation isolation planar process for AlGaN/GaN HEMTs JY Shiu, JC Huang, V Desmaris, CT Chang, CY Lu, K Kumakura, ... IEEE electron device letters 28 (6), 476-478, 2007 | 75 | 2007 |
| Theory and design of class-J power amplifiers with dynamic load modulation CM Andersson, D Gustafsson, K Yamanaka, E Kuwata, H Otsuka, ... IEEE transactions on microwave theory and techniques 60 (12), 3778-3786, 2012 | 74 | 2012 |
| Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's N Angelov, H Zirath, A Rorsman IEEE transactions on microwave theory and techniques 43 (5), 1046-1052, 1995 | 71 | 1995 |
| Extending the high-frequency limit of a single-electron transistor by on-chip impedance transformation J Pettersson, P Wahlgren, P Delsing, DB Haviland, T Claeson, ... Physical Review B 53 (20), R13272, 1996 | 64 | 1996 |
Herbert ZirathProfessor High Speed ElectronicsVerified email at chalmers.se
