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Alexandros Sarantopoulos
Alexandros Sarantopoulos
Forschungszentrum Jülich GmbH - Electronic Materials (PGI-7)
Verified email at fz-juelich.de
Title
Cited by
Cited by
Year
Oxygen vacancies in strained thin films: Formation enthalpy and manipulation
L Iglesias, A Sarantopoulos, C Magén, F Rivadulla
Physical Review B 95 (16), 165138, 2017
432017
Electronic Degeneracy and Intrinsic Magnetic Properties of Epitaxial Thin Films Controlled by Defects
A Sarantopoulos, E Ferreiro-Vila, V Pardo, C Magén, MH Aguirre, ...
Physical review letters 115 (16), 166801, 2015
302015
Reduction of thermal conductivity in ferroelectric thin films
A Sarantopoulos, D Saha, WL Ong, C Magén, JA Malen, F Rivadulla
Physical Review Materials 4 (5), 054002, 2020
152020
Effect of epitaxial strain and vacancies on the ferroelectric-like response of CaTiO3 thin films
A Sarantopoulos, WL Ong, JA Malen, F Rivadulla
Applied Physics Letters 113 (18), 2018
122018
Effect of electron conduction on the read noise characteristics in ReRAM devices
K Schnieders, C Funck, F Cüppers, S Aussen, T Kempen, ...
APL Materials 10 (10), 2022
112022
Enhanced metal exsolution at the non-polar (001) surfaces of multi-faceted epitaxial thin films
ML Weber, M Kindelmann, E Wessel, A Sarantopoulos, NH Menzler, ...
Journal of Physics: Energy 5 (1), 014002, 2022
42022
Interfacial Thermal Resistive Switching in (Pt,Cr)/SrTiO3 Devices
V Álvarez-Martínez, R Ramos, V Leborán, A Sarantopoulos, R Dittmann, ...
ACS Applied Materials & Interfaces 16 (12), 15043-15049, 2024
32024
Control of growth kinetics during remote epitaxy of complex oxides on graphene by pulsed laser deposition
MA Wohlgemuth, U Trstenjak, A Sarantopoulos, F Gunkel, R Dittmann
APL Materials 12 (2), 2024
32024
Eightwise switching mechanism in memristive SrTiO3 devices and its implications on the device performance
A Sarantopoulos, R Waser, R Dittmann
physica status solidi (a), 2023
22023
Thermoelectric Properties of SrTiO3 and CaTiO3 Thin Films
A Sarantopoulos
Universidade de Santiago de Compostela, 2019
22019
Resolving the Relaxation of Volatile Valence Change Memory
J Hellwig, C Funck, S Siegel, A Sarantopoulos, D Spithouris, S Menzel, ...
Advanced Electronic Materials, 2400062, 2024
12024
Resistive switching acceleration induced by thermal confinement
A Sarantopoulos, K Lange, F Rivadulla, S Menzel, R Dittmann
Advanced Electronic Materials, 2400555, 2024
12024
(Invited) 3D Integration of 2D Devices for Neuromorphic Computing
S Das
Electrochemical Society Meeting Abstracts 245, 3010-3010, 2024
2024
Engineering the kinetics of redox-based memristive devices for neuromorphic computing
R Dittmann, A Sarantopoulos, C Bengel, A Gutsche, F Cüppers, ...
2023 International Electron Devices Meeting (IEDM), 1-4, 2023
2023
Variability Reduction with Bilayer RRAM Device
T Kempen, A Bende, A Sarantopoulos, R Dittmann, C Bengel, ...
2023 18th International Workshop on Cellular Nanoscale Networks and their …, 2023
2023
Influence of Strain on the Thermoelectric Properties of electron-doped SrTiO3 Thin Films
A Sarantopoulos, E Ferreiro-Vila, C Magen, MH Aguirre, V Pardo, ...
APS March Meeting Abstracts 2015, S13. 011, 2015
2015
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