Bogdan Govoreanu
Bogdan Govoreanu
Principal Member of Technical Staff, imec
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1010nm2Hf/HfOxcrossbar resistive RAM with excellent performance, reliability and low-energy operation
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
2011 International Electron Devices Meeting, 31.6. 1-31.6. 4, 2011
High-k dielectrics for future generation memory devices
JA Kittl, K Opsomer, M Popovici, N Menou, B Kaczer, XP Wang, ...
Microelectronic engineering 86 (7-9), 1789-1795, 2009
Evidences of oxygen-mediated resistive-switching mechanism in cells
L Goux, P Czarnecki, YY Chen, L Pantisano, XP Wang, R Degraeve, ...
Applied Physics Letters 97 (24), 243509, 2010
VARIOT: A novel multilayer tunnel barrier concept for low-voltage nonvolatile memory devices
B Govoreanu, P Blomme, M Rosmeulen, J Van Houdt, K De Meyer
IEEE Electron Device Letters 24 (2), 99-101, 2003
Endurance/Retention Trade-off onCap 1T1R Bipolar RRAM
YY Chen, L Goux, S Clima, B Govoreanu, R Degraeve, GS Kar, A Fantini, ...
IEEE Transactions on electron devices 60 (3), 1114-1121, 2013
Intrinsic switching variability in HfO2RRAM
A Fantini, L Goux, R Degraeve, DJ Wouters, N Raghavan, G Kar, ...
2013 5th IEEE International Memory Workshop, 30-33, 2013
Balancing SET/RESET Pulse forEndurance in1T1R Bipolar RRAM
YY Chen, B Govoreanu, L Goux, R Degraeve, A Fantini, GS Kar, ...
IEEE Transactions on Electron devices 59 (12), 3243-3249, 2012
Improvement of data retention in HfO2/Hf 1T1R RRAM cell under low operating current
YY Chen, M Komura, R Degraeve, B Govoreanu, L Goux, A Fantini, ...
2013 IEEE International Electron Devices Meeting, 10.1. 1-10.1. 4, 2013
Dynamic ‘hour glass’ model for SET and RESET in HfO2RRAM
R Degraeve, A Fantini, S Clima, B Govoreanu, L Goux, YY Chen, ...
2012 Symposium on VLSI Technology (VLSIT), 75-76, 2012
Trap spectroscopy by charge injection and sensing (TSCIS): A quantitative electrical technique for studying defects in dielectric stacks
R Degraeve, M Cho, B Govoreanu, B Kaczer, MB Zahid, J Van Houdt, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Understanding of the endurance failure in scaled HfO2-based 1T1R RRAM through vacancy mobility degradation
YY Chen, R Degraeve, S Clima, B Govoreanu, L Goux, A Fantini, GS Kar, ...
2012 International Electron Devices Meeting, 20.3. 1-20.3. 4, 2012
Scaling down the interpoly dielectric for next generation flash memory: Challenges and opportunities
B Govoreanu, DP Brunco, J Van Houdt
Solid-state electronics 49 (11), 1841-1848, 2005
First-principles simulation of oxygen diffusion in HfOx: Role in the resistive switching mechanism
S Clima, YY Chen, R Degraeve, M Mees, K Sankaran, B Govoreanu, ...
Applied Physics Letters 100 (13), 133102, 2012
Te-based chalcogenide materials for selector applications
A Velea, K Opsomer, W Devulder, J Dumortier, J Fan, C Detavernier, ...
Scientific reports 7 (1), 1-12, 2017
Vacancy-modulated conductive oxide resistive RAM (VMCO-RRAM): An area-scalable switching current, self-compliant, highly nonlinear and wide on/off-window resistive switching cell
B Govoreanu, A Redolfi, L Zhang, C Adelmann, M Popovici, S Clima, ...
2013 IEEE International Electron Devices Meeting, 10.2. 1-10.2. 4, 2013
Ultralow sub-500nA operating current high-performance TiN\Al2O3\HfO2\Hf\TiN bipolar RRAM achieved through understanding-based stack-engineering
L Goux, A Fantini, G Kar, YY Chen, N Jossart, R Degraeve, S Clima, ...
2012 Symposium on VLSI Technology (VLSIT), 159-160, 2012
Towards understanding degradation and breakdown of SiO2/high-k stacks
T Kauerauf, R Degraeve, E Cartier, B Govoreanu, P Blomme, B Kaczer, ...
Digest. International Electron Devices Meeting,, 521-524, 2002
Scaling CMOS: Finding the gate stack with the lowest leakage current
T Kauerauf, B Govoreanu, R Degraeve, G Groeseneken, H Maes
Solid-state electronics 49 (5), 695-701, 2005
Microscopic origin of random telegraph noise fluctuations in aggressively scaled RRAM and its impact on read disturb variability
N Raghavan, R Degraeve, A Fantini, L Goux, S Strangio, B Govoreanu, ...
2013 IEEE International Reliability Physics Symposium (IRPS), 5E. 3.1-5E. 3.7, 2013
Two-Pulse: A New Method for Characterizing Electron Traps in the Bulk ofDielectric Stacks
WD Zhang, B Govoreanu, XF Zheng, DR Aguado, M Rosmeulen, ...
IEEE Electron Device Letters 29 (9), 1043-1046, 2008
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