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YI SHUANG
YI SHUANG
Verified email at dc.tohoku.ac.jp
Title
Cited by
Cited by
Year
Water‐Lubricated Intercalation in V2O5·nH2O for High‐Capacity and High‐Rate Aqueous Rechargeable Zinc Batteries
M Yan, P He, Y Chen, S Wang, Q Wei, K Zhao, X Xu, Q An, Y Shuang, ...
Advanced materials 30 (1), 1703725, 2018
12162018
MoS2/MnO2 heterostructured nanodevices for electrochemical energy storage
X Liao, Y Zhao, J Wang, W Yang, L Xu, X Tian, Y Shuang, KA Owusu, ...
Nano research 11, 2083-2092, 2018
532018
Reversible displacive transformation in MnTe polymorphic semiconductor
S Mori, S Hatayama, Y Shuang, D Ando, Y Sutou
Nature Communications 11 (1), 85, 2020
472020
Contact resistance change memory using N-doped Cr2Ge2Te6 phase-change material showing non-bulk resistance change
Y Shuang, Y Sutou, S Hatayama, S Shindo, YH Song, D Ando, J Koike
Applied Physics Letters 112 (18), 2018
292018
Cr-Triggered Local Structural Change in Cr2Ge2Te6 Phase Change Material
S Hatayama, Y Shuang, P Fons, Y Saito, AV Kolobov, K Kobayashi, ...
ACS applied materials & interfaces 11 (46), 43320-43329, 2019
282019
Amorphous-to-Crystal Transition in Quasi-Two-Dimensional MoS2: Implications for 2D Electronic Devices
M Krbal, V Prokop, AA Kononov, JR Pereira, J Mistrik, AV Kolobov, ...
ACS Applied Nano Materials 4 (9), 8834-8844, 2021
242021
Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material
Y Saito, S Hatayama, Y Shuang, P Fons, AV Kolobov, Y Sutou
Scientific reports 11 (1), 4782, 2021
142021
Bidirectional selector utilizing hybrid diodes for PCRAM applications
Y Shuang, S Hatayama, J An, J Hong, D Ando, Y Song, Y Sutou
Scientific Reports 9 (1), 20209, 2019
142019
Phase control of sputter-grown large-area MoTe2 films by preferential sublimation of Te: amorphous, 1T′ and 2H phases
S Hatayama, Y Saito, K Makino, N Uchida, Y Shuang, S Mori, Y Sutou, ...
Journal of Materials Chemistry C 10 (29), 10627-10635, 2022
112022
Systematic materials design for phase-change memory with small density changes for high-endurance non-volatile memory applications
Y Saito, S Hatayama, Y Shuang, S Shindo, P Fons, AV Kolobov, ...
Applied Physics Express 12 (5), 051008, 2019
112019
The importance of contacts in Cu2GeTe3 phase change memory devices
S Shindo, Y Shuang, S Hatayama, Y Saito, P Fons, AV Kolobov, ...
Journal of Applied Physics 128 (16), 2020
102020
Understanding the low resistivity of the amorphous phase of phase-change material: Experimental evidence for the key role of Cr clusters
S Hatayama, K Kobayashi, Y Saito, P Fons, Y Shuang, S Mori, ...
Physical Review Materials 5 (8), 085601, 2021
92021
Nitrogen doping-induced local structure change in a Cr 2 Ge 2 Te 6 inverse resistance phase-change material
Y Shuang, S Hatayama, H Tanimura, D Ando, T Ichitsubo, Y Sutou
Materials Advances 1 (7), 2426-2432, 2020
92020
Electrical Conduction Mechanism of β‐MnTe Thin Film with Wurtzite‐Type Structure Using Radiofrequency Magnetron Sputtering
M Kim, S Mori, Y Shuang, S Hatayama, D Ando, Y Sutou
physica status solidi (RRL)–Rapid Research Letters 16 (9), 2100641, 2022
72022
NbTe4 Phase‐Change Material: Breaking the Phase‐Change Temperature Balance in 2D Van der Waals Transition‐Metal Binary Chalcogenide
Y Shuang, Q Chen, M Kim, Y Wang, Y Saito, S Hatayama, P Fons, D Ando, ...
Advanced Materials 35 (39), 2303646, 2023
42023
Evolution of the local structure surrounding nitrogen atoms upon the amorphous to crystalline phase transition in nitrogen-doped Cr2Ge2Te6 phase-change material
Y Shuang, S Hatayama, Y Saito, P Fons, AV Kolobov, D Ando, Y Sutou
Applied Surface Science 556, 149760, 2021
42021
Temperature‐Dependent Electronic Transport in Non‐Bulk‐Resistance‐Variation Nitrogen‐Doped Cr2Ge2Te6 Phase‐Change Material
Y Shuang, S Hatayama, D Ando, Y Sutou
physica status solidi (RRL)–Rapid Research Letters 15 (3), 2000415, 2021
42021
Origins of midgap states in Te-based Ovonic threshold switch materials
S Hatayama, Y Saito, P Fons, Y Shuang, M Kim, Y Sutou
Acta Materialia 258, 119209, 2023
12023
An isomorphic valency transition in SmTe film enabling nonvolatile resistive change
S Hatayama, S Mori, Y Saito, P Fons, Y Shuang, Y Sutou
12022
Effect of N dopants on the phase change characteristics of Cr2Ge2Te6 film revealed by changes in optical properties
Y Shuang, S Hatayama, D Ando, Y Sutou
Applied Surface Science 601, 154189, 2022
12022
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