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Joseph Shappir
Joseph Shappir
Professor of Applied Physics, the Hebrew University of Jerusalem
Verified email at mail.huji.ac.il - Homepage
Title
Cited by
Cited by
Year
Locally oxidized silicon surface-plasmon Schottky detector for telecom regime
I Goykhman, B Desiatov, J Khurgin, J Shappir, U Levy
Nano letters 11 (6), 2219-2224, 2011
3222011
On-chip integrated, silicon–graphene plasmonic Schottky photodetector with high responsivity and avalanche photogain
I Goykhman, U Sassi, B Desiatov, N Mazurski, S Milana, D De Fazio, ...
Nano letters 16 (5), 3005-3013, 2016
2762016
In-cell recordings by extracellular microelectrodes
A Hai, J Shappir, ME Spira
Nature methods 7 (3), 200-202, 2010
2742010
Trap generation and occupation dynamics in SiO2 under charge injection stress
Y Nissan‐Cohen, J Shappir, D Frohman‐Bentchkowsky
Journal of applied physics 60 (6), 2024-2035, 1986
2361986
Analysis and modeling of floating-gate EEPROM cells
A Kolodny, STK Nieh, B Eitan, J Shappir
IEEE Transactions on Electron Devices 33 (6), 835-844, 1986
2151986
Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band
I Goykhman, B Desiatov, J Khurgin, J Shappir, U Levy
Optics express 20 (27), 28594-28602, 2012
1792012
Spine-shaped gold protrusions improve the adherence and electrical coupling of neurons with the surface of micro-electronic devices
A Hai, A Dormann, J Shappir, S Yitzchaik, C Bartic, G Borghs, ...
Journal of the Royal Society Interface 6 (41), 1153-1165, 2009
1572009
Dynamic model of trapping‐detrapping in SiO2
Y Nissan‐Cohen, J Shappir, D Frohman‐Bentchkowsky
Journal of applied physics 58 (6), 2252-2261, 1985
1541985
High‐field and current‐induced positive charge in thermal SiO2 layers
Y Nissan‐Cohen, J Shappir, D Frohman‐Bentchkowsky
Journal of applied physics 57 (8), 2830-2839, 1985
1391985
Nanoscale plasmonic memristor with optical readout functionality
A Emboras, I Goykhman, B Desiatov, N Mazurski, L Stern, J Shappir, ...
Nano letters 13 (12), 6151-6155, 2013
1332013
Long-term, multisite, parallel, in-cell recording and stimulation by an array of extracellular microelectrodes
A Hai, J Shappir, ME Spira
Journal of neurophysiology 104 (1), 559-568, 2010
1312010
Hybrid electrical device with biological components
S Yitzchaik, J Shappir, M Spira
US Patent 6,703,660, 2004
1232004
Plasmonic enhanced silicon pyramids for internal photoemission Schottky detectors in the near-infrared regime
B Desiatov, I Goykhman, N Mazurski, J Shappir, JB Khurgin, U Levy
Optica 2 (4), 335-338, 2015
1122015
High field current induced‐positive charge transients in SiO2
Y Nissan‐Cohen, J Shappir, D Frohman‐Bentchkowsky
Journal of applied physics 54 (10), 5793-5800, 1983
1061983
Investigation of MOS capacitors with thin ZrO2layers and various gate materials for advanced DRAM applications
J Shappir, A Anis, I Pinsky
IEEE transactions on electron devices 33 (4), 442-449, 1986
961986
Composite dielectric for a semiconductor device and method of fabrication
J Shappir, I Rahat
US Patent 5,258,333, 1993
911993
A model for silicon‐oxide breakdown under high field and current stress
E Avni, J Shappir
Journal of Applied Physics 64 (2), 743-748, 1988
831988
Formation of essential ultrastructural interface between cultured hippocampal cells and gold mushroom-shaped MEA-toward “IN-CELL” recordings from vertebrate neurons
A Fendyur, N Mazurski, J Shappir, ME Spira
Frontiers in neuroengineering 4, 14, 2011
712011
Acetylcholinesterase–ISFET based system for the detection of acetylcholine and acetylcholinesterase inhibitors
A Hai, D Ben-Haim, N Korbakov, A Cohen, J Shappir, R Oren, ME Spira, ...
Biosensors and Bioelectronics 22 (5), 605-612, 2006
702006
Impact ionization at very low voltages in silicon
B Eitan, D Frohman‐Bentchkowsky, J Shappir
Journal of Applied Physics 53 (2), 1244-1247, 1982
681982
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