Eduard Cartier
Eduard Cartier
Research Staff Member, IBM Research, T. J. Watson Research Center
Verified email at us.ibm.com
Title
Cited by
Cited by
Year
Effective electron mobility in Si inversion layers in metal–oxide–semiconductor systems with a high-κ insulator: The role of remote phonon scattering
MV Fischetti, DA Neumayer, EA Cartier
Journal of Applied Physics 90 (9), 4587-4608, 2001
8752001
Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
DJ DiMaria, E Cartier, D Arnold
Journal of Applied Physics 73 (7), 3367-3384, 1993
8691993
Mechanism for stress‐induced leakage currents in thin silicon dioxide films
DJ DiMaria, E Cartier
Journal of Applied physics 78 (6), 3883-3894, 1995
6501995
Materials characterization of and binary oxides deposited by chemical solution deposition
DA Neumayer, E Cartier
Journal of Applied Physics 90 (4), 1801-1808, 2001
5942001
High-resolution depth profiling in ultrathin films on Si
EP Gusev, M Copel, E Cartier, IJR Baumvol, C Krug, MA Gribelyuk
Applied Physics Letters 76 (2), 176-178, 2000
4932000
Ultrathin high-K metal oxides on silicon: processing, characterization and integration issues
EP Gusev, E Cartier, DA Buchanan, M Gribelyuk, M Copel, ...
Microelectronic Engineering 59 (1-4), 341-349, 2001
4822001
Atomic beam deposition of lanthanum-and yttrium-based oxide thin films for gate dielectrics
S Guha, E Cartier, MA Gribelyuk, NA Bojarczuk, MC Copel
Applied Physics Letters 77 (17), 2710-2712, 2000
4182000
Passivation and depassivation of silicon dangling bonds at the Si/SiO2 interface by atomic hydrogen
E Cartier, JH Stathis, DA Buchanan
Applied physics letters 63 (11), 1510-1512, 1993
4091993
Origin of the threshold voltage instability in SiO2/HfO2 dual layer gate dielectrics
A Kerber, E Cartier, L Pantisano, R Degraeve, T Kauerauf, Y Kim, A Hou, ...
IEEE Electron Device Letters 24 (2), 87-89, 2003
4052003
Theory of high-field electron transport and impact ionization in silicon dioxide
D Arnold, E Cartier, DJ DiMaria
Physical Review B 49 (15), 10278, 1994
3621994
Physical and electrical characterization of Hafnium oxide and Hafnium silicate sputtered films
A Callegari, E Cartier, M Gribelyuk, HF Okorn-Schmidt, T Zabel
Journal of Applied Physics 90 (12), 6466-6475, 2001
3572001
Ultrathin high-K gate stacks for advanced CMOS devices
EP Gusev, DA Buchanan, E Cartier, A Kumar, D DiMaria, S Guha, ...
International Electron Devices Meeting. Technical Digest (Cat. No. 01CH37224 …, 2001
3562001
Threshold voltage instabilities in high-/spl kappa/gate dielectric stacks
S Zafar, A Kumar, E Gusev, E Cartier
IEEE Transactions on Device and Materials Reliability 5 (1), 45-64, 2005
3402005
Formation of a stratified lanthanum silicate dielectric by reaction with Si (001)
M Copel, E Cartier, FM Ross
Applied Physics Letters 78 (11), 1607-1609, 2001
2972001
Anode hole injection and trapping in silicon dioxide
DJ DiMaria, E Cartier, DA Buchanan
Journal of applied physics 80 (1), 304-317, 1996
2531996
Switching of ferroelectric polarization in epitaxial BaTiO3 films on silicon without a conducting bottom electrode
C Dubourdieu, J Bruley, TM Arruda, A Posadas, J Jordan-Sweet, ...
Nature nanotechnology 8 (10), 748, 2013
2332013
Gate-all-around silicon nanowire 25-stage CMOS ring oscillators with diameter down to 3 nm
S Bangsaruntip, A Majumdar, GM Cohen, SU Engelmann, Y Zhang, ...
2010 Symposium on VLSI Technology, 21-22, 2010
2102010
Impact ionization in silicon
E Cartier, MV Fischetti, EA Eklund, FR McFeely
Applied Physics Letters 62 (25), 3339-3341, 1993
1941993
Atomic hydrogen reactions with P b centers at the (100) Si/SiO 2 interface
JH Stathis, E Cartier
Physical review letters 72 (17), 2745, 1994
1931994
Characterization of the V/sub T/-instability in SiO/sub 2//HfO/sub 2/gate dielectrics
A Kerber, E Cartier, L Pantisano, M Rosmeulen, R Degraeve, T Kauerauf, ...
2003 IEEE International Reliability Physics Symposium Proceedings, 2003 …, 2003
1822003
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Articles 1–20