Predictive simulation framework for boron diffused p+ layer optimization: Sensitivity analysis of boron tube diffusion process parameters of industrial n-type silicon wafer … M Li, J Wong, EC Wang, J Rodriguez, S Duttagupta, G Samudra, ... Solar Energy Materials and Solar Cells 189, 63-74, 2019 | 16 | 2019 |
Study on Trapping Effects in AlGaN/GaN-on-Si Devices with Vertical Interconnect Structures TF Chang, CY Chang, CF Huang, YC Liang, GS Samudra, RM Lin ECS Journal of Solid State Science and Technology 6 (11), S3052, 2017 | | 2017 |
Numerical simulation of doping process by BBr3 tube diffusion for industrial n-type silicon wafer solar cells M Li, FJ Ma, IM Peters, KD Shetty, AG Aberle, B Hoex, GS Samudra IEEE Journal of Photovoltaics 7 (3), 755-762, 2017 | 17 | 2017 |
Delay and power evaluation of negative capacitance ferroelectric MOSFET based on SPICE model Y Li, K Yao, GS Samudra IEEE Transactions on Electron Devices 64 (5), 2403-2408, 2017 | 36 | 2017 |
Investigation on the Ag-Al Metal Spiking into Boron-Diffused p+ Layers of Industrial Bifacial n-Type Silicon Wafer Solar Cells by Numerical Simulation M LI, FJ MA, R STANGL, AG ABERLE, GS SAMUDRA, B HOEX Proceedings of the 33rd European PV Solar Energy Conference and Exhibition …, 2017 | 2 | 2017 |
Power integrity modeling and measurement of TSV-based 3D IC system with application to the analysis of seven-chip stack HM Lee, EX Liu, GS Samudra, EP Li, HY Li, KH Teo IEEE Electromagnetic Compatibility Magazine 5 (3), 52-60, 2016 | 3 | 2016 |
Effect of ferroelectric damping on dynamic characteristics of negative capacitance ferroelectric MOSFET Y Li, K Yao, GS Samudra IEEE Transactions on Electron Devices 63 (9), 3636-3641, 2016 | 38 | 2016 |
The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment YH Wang, YC Liang, GS Samudra, CF Huang, WH Kuo, GQ Lo Applied Physics Letters 108 (23), 2016 | 10 | 2016 |
High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs YH Wang, YC Liang, GS Samudra, PJ Chu, YC Liao, CF Huang, WH Kuo, ... Semiconductor Science and Technology 31 (2), 025004, 2015 | 17 | 2015 |
Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory Y Li, Y Lian, K Yao, GS Samudra Solid-State Electronics 114, 17-22, 2015 | 51 | 2015 |
Two-dimensional discontinuous Galerkin time-domain method for modeling of arbitrarily shaped power-ground planes HM Lee, S Gao, EX Liu, GS Samudra, EP Li IEEE Transactions on Electromagnetic Compatibility 57 (6), 1744-1747, 2015 | 16 | 2015 |
Threshold voltage instability in AlGaN/GaN HEMTs TF Chang, TC Hsiao, SH Huang, CF Huang, YH Wang, GS Samudra, ... 2015 IEEE 11th International Conference on Power Electronics and Drive …, 2015 | 13 | 2015 |
High output swing monolithic inverter with ED mode MIS-HEMTs for GaN power integrated circuits YH Wang, YC Liang, GS Samudra, BJ Huang, YC Liao, CF Huang, ... 2015 IEEE 11th International Conference on Power Electronics and Drive …, 2015 | 7 | 2015 |
Power integrity modeling, measurement and analysis of seven-chip stack for TSV-based 3D IC integration HM Lee, EX Liu, GS Samudra, EP Li 2015 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC), 689-692, 2015 | | 2015 |
Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal–ferroelectric–metal–insulator–semiconductor FET and its dynamic behaviour … Y Li, Y Lian, GS Samudra Semiconductor Science and Technology 30 (4), 045011, 2015 | 18 | 2015 |
6.5 V high threshold voltage AlGaN/GaN power metal-insulator-semiconductor high electron mobility transistor using multilayer fluorinated gate stack YH Wang, YC Liang, GS Samudra, H Huang, BJ Huang, SH Huang, ... IEEE Electron Device Letters 36 (4), 381-383, 2015 | 52 | 2015 |
6.5 V high threshold voltage AlGaN/GaN power metal-insulator-semiconductor-HEMT using multi-layer fluorinated gate stack YH Wang, YC Liang, GS Samudra, H Huang, BJ Huang, SH Huang, ... IEEE Electron Device Lett 36 (4), 381-383, 2015 | 7 | 2015 |
Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers YH Wang, YC Liang, GS Samudra, BJ Huang, YC Liao, CF Huang, ... International Conference on Compound Semiconductor Manufacturing Technology …, 2015 | 1 | 2015 |
Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon FJ Ma, S Duttagupta, KD Shetty, L Meng, GS Samudra, B Hoex, IM Peters Journal of Applied Physics 116 (18), 2014 | 11 | 2014 |
Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs TF Chang, TC Hsiao, CF Huang, WH Kuo, SF Lin, GS Samudra, YC Liang IEEE Transactions on Electron Devices 62 (2), 339-345, 2014 | 41 | 2014 |