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Ganesh Samudra
Ganesh Samudra
Verified email at nus.edu.sg - Homepage
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Cited by
Year
Predictive simulation framework for boron diffused p+ layer optimization: Sensitivity analysis of boron tube diffusion process parameters of industrial n-type silicon wafer …
M Li, J Wong, EC Wang, J Rodriguez, S Duttagupta, G Samudra, ...
Solar Energy Materials and Solar Cells 189, 63-74, 2019
162019
Study on Trapping Effects in AlGaN/GaN-on-Si Devices with Vertical Interconnect Structures
TF Chang, CY Chang, CF Huang, YC Liang, GS Samudra, RM Lin
ECS Journal of Solid State Science and Technology 6 (11), S3052, 2017
2017
Numerical simulation of doping process by BBr3 tube diffusion for industrial n-type silicon wafer solar cells
M Li, FJ Ma, IM Peters, KD Shetty, AG Aberle, B Hoex, GS Samudra
IEEE Journal of Photovoltaics 7 (3), 755-762, 2017
172017
Delay and power evaluation of negative capacitance ferroelectric MOSFET based on SPICE model
Y Li, K Yao, GS Samudra
IEEE Transactions on Electron Devices 64 (5), 2403-2408, 2017
362017
Investigation on the Ag-Al Metal Spiking into Boron-Diffused p+ Layers of Industrial Bifacial n-Type Silicon Wafer Solar Cells by Numerical Simulation
M LI, FJ MA, R STANGL, AG ABERLE, GS SAMUDRA, B HOEX
Proceedings of the 33rd European PV Solar Energy Conference and Exhibition …, 2017
22017
Power integrity modeling and measurement of TSV-based 3D IC system with application to the analysis of seven-chip stack
HM Lee, EX Liu, GS Samudra, EP Li, HY Li, KH Teo
IEEE Electromagnetic Compatibility Magazine 5 (3), 52-60, 2016
32016
Effect of ferroelectric damping on dynamic characteristics of negative capacitance ferroelectric MOSFET
Y Li, K Yao, GS Samudra
IEEE Transactions on Electron Devices 63 (9), 3636-3641, 2016
382016
The physical mechanism on the threshold voltage temperature stability improvement for GaN HEMTs with pre-fluorination argon treatment
YH Wang, YC Liang, GS Samudra, CF Huang, WH Kuo, GQ Lo
Applied Physics Letters 108 (23), 2016
102016
High-temperature studies of multiple fluorinated traps within an Al2O3 gate dielectric for E-Mode AlGaN/GaN power MIS-HEMTs
YH Wang, YC Liang, GS Samudra, PJ Chu, YC Liao, CF Huang, WH Kuo, ...
Semiconductor Science and Technology 31 (2), 025004, 2015
172015
Evaluation and optimization of short channel ferroelectric MOSFET for low power circuit application with BSIM4 and Landau theory
Y Li, Y Lian, K Yao, GS Samudra
Solid-State Electronics 114, 17-22, 2015
512015
Two-dimensional discontinuous Galerkin time-domain method for modeling of arbitrarily shaped power-ground planes
HM Lee, S Gao, EX Liu, GS Samudra, EP Li
IEEE Transactions on Electromagnetic Compatibility 57 (6), 1744-1747, 2015
162015
Threshold voltage instability in AlGaN/GaN HEMTs
TF Chang, TC Hsiao, SH Huang, CF Huang, YH Wang, GS Samudra, ...
2015 IEEE 11th International Conference on Power Electronics and Drive …, 2015
132015
High output swing monolithic inverter with ED mode MIS-HEMTs for GaN power integrated circuits
YH Wang, YC Liang, GS Samudra, BJ Huang, YC Liao, CF Huang, ...
2015 IEEE 11th International Conference on Power Electronics and Drive …, 2015
72015
Power integrity modeling, measurement and analysis of seven-chip stack for TSV-based 3D IC integration
HM Lee, EX Liu, GS Samudra, EP Li
2015 Asia-Pacific Symposium on Electromagnetic Compatibility (APEMC), 689-692, 2015
2015
Quantitative analysis and prediction of experimental observations on quasi-static hysteretic metal–ferroelectric–metal–insulator–semiconductor FET and its dynamic behaviour …
Y Li, Y Lian, GS Samudra
Semiconductor Science and Technology 30 (4), 045011, 2015
182015
6.5 V high threshold voltage AlGaN/GaN power metal-insulator-semiconductor high electron mobility transistor using multilayer fluorinated gate stack
YH Wang, YC Liang, GS Samudra, H Huang, BJ Huang, SH Huang, ...
IEEE Electron Device Letters 36 (4), 381-383, 2015
522015
6.5 V high threshold voltage AlGaN/GaN power metal-insulator-semiconductor-HEMT using multi-layer fluorinated gate stack
YH Wang, YC Liang, GS Samudra, H Huang, BJ Huang, SH Huang, ...
IEEE Electron Device Lett 36 (4), 381-383, 2015
72015
Effect of Gate Threshold Swings by ALD-Al2O3/AlGaN Interfacial Traps in GaN Power HEMT with Multiple Fluorinated Gate Dielectric Layers
YH Wang, YC Liang, GS Samudra, BJ Huang, YC Liao, CF Huang, ...
International Conference on Compound Semiconductor Manufacturing Technology …, 2015
12015
Two-dimensional numerical simulation of boron diffusion for pyramidally textured silicon
FJ Ma, S Duttagupta, KD Shetty, L Meng, GS Samudra, B Hoex, IM Peters
Journal of Applied Physics 116 (18), 2014
112014
Phenomenon of drain current instability on p-GaN gate AlGaN/GaN HEMTs
TF Chang, TC Hsiao, CF Huang, WH Kuo, SF Lin, GS Samudra, YC Liang
IEEE Transactions on Electron Devices 62 (2), 339-345, 2014
412014
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