Hosub Jin
Hosub Jin
UNIST (Ulsan National Institute of Science and Technology)
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Novel J eff= 1/2 Mott state induced by relativistic spin-orbit coupling in Sr2IrO4
BJ Kim, H Jin, SJ Moon, JY Kim, BG Park, CS Leem, J Yu, TW Noh, C Kim, ...
Physical Review Letters 101 (7), 076402, 2008
Dimensionality-Controlled Insulator-Metal Transition and Correlated Metallic State in 5 d Transition Metal Oxides Sr n+ 1 Ir n O 3 n+ 1 (n= 1, 2, and∞)
SJ Moon, H Jin, KW Kim, WS Choi, YS Lee, J Yu, G Cao, A Sumi, ...
Physical Review Letters 101 (22), 226402, 2008
Switchable S=1/2 and J=1/2 Rashba bands in ferroelectric halide perovskites
M Kim, J Im, AJ Freeman, J Ihm, H Jin
Proceedings of the National Academy of Sciences 111 (19), 6900, 2014
Antagonism between Spin-Orbit Coupling and Steric Effects Causes Anomalous Bandgap Evolution in the Perovskite Photovoltaic Materials CH3NH3Sn1-xPbxI3
J Im, CC Stoumpos, H Jin, AJ Freeman, MG Kanatzidis
Journal of Physical Chemistry Letters 6, 3503, 2015
Temperature dependence of the electronic structure of the J eff=1/2 Mott insulator Sr2IrO4 studied by optical spectroscopy
SJ Moon, H Jin, WS Choi, JS Lee, SSA Seo, J Yu, G Cao, TW Noh, ...
Physical Review B 80 (19), 195110, 2009
Dimensional reduction: a design tool for new radiation detection materials
J Androulakis, SC Peter, H Li, CD Malliakas, JA Peters, Z Liu, ...
Advanced Materials 23 (36), 4163-4167, 2011
Interaction and ordering of vacancy defects in NiO
S Park, HS Ahn, CK Lee, H Kim, H Jin, HS Lee, S Seo, J Yu, S Han
Physical Review B 77 (13), 134103, 2008
Anisotropic exchange interactions of spin-orbit-integrated states in Sr2IrO4
H Jin, H Jeong, T Ozaki, J Yu
Physical Review B 80 (7), 075112, 2009
Thallium Chalcohalides for X-ray and γ-ray Detection
S Johnsen, Z Liu, JA Peters, JH Song, S Nguyen, CD Malliakas, H Jin, ...
Journal of the American Chemical Society 133 (26), 10030-10033, 2011
Topological insulator phase in halide perovskite structures
H Jin, J Im, AJ Freeman
Physical Review B 86 (12), 121102(R), 2012
Topological Quantum Phase Transition in 5 d Transition Metal Oxide Na 2 IrO 3
CH Kim, HS Kim, H Jeong, H Jin, J Yu
Physical Review Letters 108 (10), 106401, 2012
Phonon-driven spin-Floquet magneto-valleytronics in MoS 2
D Shin, H Hübener, U De Giovannini, H Jin, A Rubio, N Park
Nature Communications 9 (1), 638, 2018
Thallium Chalcogenide-Based Wide-Band-Gap Semiconductors: TlGaSe2 for Radiation Detectors
S Johnsen, Z Liu, JA Peters, JH Song, SC Peter, CD Malliakas, NK Cho, ...
Chemistry of Materials 23 (12), 3120-3128, 2011
Cs2MIIMIV3Q8 (Q = S, Se, Te): An Extensive Family of Layered Semiconductors with Diverse Band Gaps
CD Morris, H Li, H Jin, CD Malliakas, JA Peters, PN Trikalitis, AJ Freeman, ...
Chemistry of Materials 25 (16), 3344-3356, 2013
Topological domain walls and quantum valley Hall effects in silicene
Y Kim, K Choi, J Ihm, H Jin
Physical Review B 89 (8), 085429, 2014
Spin-orbital entangled molecular jeff states in lacunar spinel compounds
HS Kim, J Im, MJ Han, H Jin
Nature Communications 5, 3988, 2014
Gate-tunable giant nonreciprocal charge transport in noncentrosymmetric oxide interfaces
D Choe, MJ Jin, SI Kim, HJ Choi, J Jo, I Oh, J Park, H Jin, HC Koo, BC Min, ...
Nature Communications 10, 4510, 2019
Tl2Hg3Q4 (Q= S, Se, and Te): high-density, wide-band-gap semiconductors
S Johnsen, SC Peter, SL Nguyen, JH Song, H Jin, AJ Freeman, ...
Chemistry of Materials 23 (19), 4375-4383, 2011
Candidates for topological insulators: Pb-based chalcogenide series
H Jin, JH Song, AJ Freeman, MG Kanatzidis
Physical Review B 83 (4), 041202(R), 2011
Prediction of ferroelectricity-driven Berry curvature enabling charge- and spin-controllable photocurrent in tin telluride monolayers
J Kim, KW Kim, D Shin, SH Lee, J Sinova, N Park, H Jin
Nature Communications 10, 3965, 2019
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