Follow
Manvi Agrawal
Title
Cited by
Cited by
Year
GaN schottky metal–semiconductor–metal UV photodetectors on Si (111) grown by ammonia-MBE
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
IEEE Sensors Journal 17 (1), 72-77, 2016
282016
Growth and characterization of AlGaN/GaN/AlGaN double-heterojunction high-electron-mobility transistors on 100-mm Si (111) using ammonia-molecular beam epitaxy
L Ravikiran, N Dharmarasu, K Radhakrishnan, M Agrawal, L Yiding, ...
Journal of Applied Physics 117 (2), 025301, 2015
202015
Demonstration of AlGaN/GaN high-electron-mobility transistors on 100-mm-diameter Si (111) by ammonia molecular beam epitaxy
N Dharmarasu, K Radhakrishnan, M Agrawal, L Ravikiran, S Arulkumaran, ...
Applied Physics Express 5 (9), 091003, 2012
202012
Structural properties of GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (111) by ammonia molecular beam epitaxy
M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran
Thin Solid Films 520 (24), 7109-7114, 2012
152012
AlGaN/GaN HEMT-based high-sensitive NO2 gas sensors
A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu
Japanese Journal of Applied Physics 58 (SC), SCCD23, 2019
112019
Responsivity drop due to conductance modulation in GaN metal-semiconductor-metal Schottky based UV photodetectors on Si (111)
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, Z Wang, ...
Semiconductor Science and Technology 31 (9), 095003, 2016
112016
Effect of III/V ratio on the polarity of AlN and GaN layers grown in the metal rich growth regime on Si (111) by plasma assisted molecular beam epitaxy
M Agrawal, K Radhakrishnan, N Dharmarasu, SS Pramana
Japanese Journal of Applied Physics 54 (6), 065701, 2015
112015
Mid-Infrared GaN/AlGaN Quantum Cascade Detector Grown on Silicon
B Dror, Y Zheng, M Agrawal, K Radhakrishnan, M Orenstein, G Bahir
IEEE Electron Device Letters 40 (2), 263-266, 2018
102018
Strain states of AlN/GaN-stress mitigating layer and their effect on GaN buffer layer grown by ammonia molecular beam epitaxy on 100-mm Si (111)
L Ravikiran, K Radhakrishnan, N Dharmarasu, M Agrawal, ...
Journal of Applied Physics 114 (12), 123503, 2013
92013
Effect of stress mitigating layers on the structural properties of GaN grown by ammonia molecular beam epitaxy on 100 mm Si (111)
L Ravikiran, M Agrawal, N Dharmarasu, K Radhakrishnan
Japanese Journal of Applied Physics 52 (8S), 08JE05, 2013
72013
Realization of two‐dimensional electron gas in AlGaN/GaN HEMT structure grown on Si (111) by PA‐MBE
N Dharmarasu, K Radhakrishnan, ZZ Sun, M Agrawal
physica status solidi c 8 (7‐8), 2075-2077, 2011
72011
Non-linear thermal resistance model for the simulation of high power GaN-based devices
S García-Sánchez, I Íñiguez-de-la-Torre, S Pérez, K Ranjan, M Agrawal, ...
Semiconductor Science and Technology 36 (5), 055002, 2021
52021
In-situ stress evolution and its correlation with structural characteristics of GaN buffer grown on Si substrate using AlGaN/AlN/GaN stress mitigation layers for high electron …
R Lingaparthi, N Dharmarasu, K Radhakrishnan, M Agrawal
Thin Solid Films 708, 138128, 2020
52020
Pt/AlGaN/GaN HEMT based ammonia gas sensors
A Ranjan, M Agrawal, K Radhakrishnan, N Dharmarasu
2019 IEEE 9th International Nanoelectronics Conferences (INEC), 1-5, 2019
52019
A study on GaSi interdiffusion during (Al) GaN/AlN growth on Si by plasma assisted molecular beam epitaxy
Y Zheng, M Agrawal, N Dharmarasu, K Radhakrishnan, S Patwal
Applied Surface Science 481, 319-326, 2019
52019
Stress evolution of GaN/AlN heterostructure grown on 6H-SiC substrate by plasma assisted molecular beam epitaxy
M Agrawal, L Ravikiran, N Dharmarasu, K Radhakrishnan, ...
AIP Advances 7 (1), 015022, 2017
52017
Study on GaN buffer leakage current in AlGaN/GaN high electron mobility transistor structures grown by ammonia-molecular beam epitaxy on 100-mm Si (111)
L Ravikiran, K Radhakrishnan, S Munawar Basha, N Dharmarasu, ...
Journal of Applied Physics 117 (24), 245305, 2015
52015
AlGaN/GaN HEMT grown on SiC with carbon doped GaN buffer by MOCVD
N Dharmarasu, GS Karthikeyan, M Agrawal, STL Alex, K Radhakrishnan
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 434-436, 2019
42019
Origin of tensile strain in GaN grown on AlGaN/AlN stress mitigating layers on 100-mm Si (1 1 1) by ammonia molecular beam epitaxy
M Agrawal, N Dharmarasu, K Radhakrishnan, L Ravikiran
Journal of crystal growth 378, 283-286, 2013
42013
Enhancement of 2D Electron Gas Mobility in an AlN/GaN/AlN Double‐Heterojunction High‐Electron‐Mobility Transistor by Epilayer Stress Engineering
S Patwal, M Agrawal, K Radhakrishnan, TLA Seah, N Dharmarasu
physica status solidi (a) 217 (7), 1900818, 2020
32020
The system can't perform the operation now. Try again later.
Articles 1–20