| Reversible phase-change behavior in two-dimensional antimony telluride (Sb2Te3) nanosheets RB Jacobs-Gedrim, MT Murphy, F Yang, N Jain, M Shanmugam, ES Song, ... Applied Physics Letters 112 (13), 2018 | 25 | 2018 |
| Improving scanning electron microscope resolution for near planar samples through the use of image restoration E Lifshin, YP Kandel, RL Moore Microscopy and Microanalysis 20 (1), 78-89, 2014 | 21 | 2014 |
| Applying stochastic simulation to study defect formation in EUV photoresists LS Melvin, U Welling, Y Kandel, ZA Levinson, H Taoka, HJ Stock, ... Japanese Journal of Applied Physics 61 (SD), SD1030, 2022 | 11 | 2022 |
| Resist outgassing contamination growth results using both photon and electron exposures G Denbeaux, Y Kandel, G Kane, D Alvardo, M Upadhyaya, Y Khopkar, ... Extreme Ultraviolet (EUV) Lithography IV 8679, 126-133, 2013 | 11 | 2013 |
| Investigating the threshold electron energy for reactions in EUV resist materials J Kaminsky, S Grzeskowiak, S Gibbons, J Chandonait, U Welling, ... Advances in Patterning Materials and Processes XXXV 10586, 222-228, 2018 | 8 | 2018 |
| Measurement of the electron beam point spread function (PSF) in a scanning electron microscope (SEM) YP Kandel, MD Zotta, AN Caferra, R Moore, E Lifshin Microscopy and Microanalysis 21 (S3), 699-700, 2015 | 8 | 2015 |
| Determination of spatial distribution of charged particle beams E Lifshin, Y Kandel US Patent 9,754,360, 2017 | 5 | 2017 |
| Calibrating stochastic signals in compact modeling ZA Levinson, YP Kandel, U Welling US Patent 11,415,897, 2022 | 4 | 2022 |
| Stochastic signal prediction in compact modeling YP Kandel, LS Melvin III US Patent 11,468,222, 2022 | 3 | 2022 |
| Impact of EUV mask absorber sidewall angle on patterning robustness LS Melvin III, Y Kandel, T Fühner, W Gao Extreme Ultraviolet (EUV) Lithography IX 10583, 280-288, 2018 | 3 | 2018 |
| Determination of current density distribution in an electron beam YP Kandel State University of New York at Albany, 2015 | 3 | 2015 |
| The Use of Regularized Least Squares Minimization for the Deconvolution of SEM Images E Lifshin, S Lyu, YR Kandel, R Moore Microscopy and Microanalysis 20 (S3), 386-387, 2014 | 3 | 2014 |
| AIS wavefront sensor: a robust optical test of exposure tools using localized wavefront curvature R Miyakawa, X Zhou, M Goldstein, D Ashworth, K Cummings, YJ Fan, ... Extreme Ultraviolet (EUV) Lithography V 9048, 781-787, 2014 | 3 | 2014 |
| Compact modeling to predict and correct stochastic hotspots in EUVL Z Levinson, Y Kandel, Y Zhang, Q Yan, M Miyagi, X Li, K Lucas Extreme Ultraviolet (EUV) Lithography XI 11323, 459-466, 2020 | 2 | 2020 |
| SEM resolution improvement using semi-blind restoration with hybrid L1-L2 regularization Y Lin, Y Kandel, M Zotta, E Lifshin 2016 IEEE Southwest Symposium on Image Analysis and Interpretation (SSIAI …, 2016 | 2 | 2016 |
| A simulation study of cleaning induced EUV reflectivity loss mechanisms on mask blanks M Upadhyaya, G Denbeaux, AJ Kadaksham, V Jindal, J Harris-Jones, ... Extreme Ultraviolet (EUV) Lithography III 8322, 636-648, 2012 | 2 | 2012 |
| An experimental study of H Balmer Lines in pulsed laser plasma YP Kandel Middletown, CT: Wesleyan University, 2009 | 2 | 2009 |
| Lithography improvement based on defect probability distributions and critical dimension variations LS Melvin III, YP Kandel, Q Yan, UK Klostermann US Patent 11,314,171, 2022 | 1 | 2022 |
| Predicting very rare stochastic defects in EUVL processes for full-chip correction and verification ZA Levinson, Y Kandel, M Miyagi, K Lucas Extreme Ultraviolet (EUV) Lithography XII 11609, 1160915, 2021 | 1 | 2021 |
| Extreme ultraviolet mask multilayer material variation impact on horizontal to vertical pattern bias LS Melvin, Y Kandel, Q Yan, A Isoyan, W Gao Extreme Ultraviolet (EUV) Lithography IX 10583, 416-425, 2018 | 1 | 2018 |
Greg DenbeauxSUNY Albany, College of Nanotechnology, Science, and EngineeringVerified email at albany.edu
