Sen Mei
Title
Cited by
Cited by
Year
Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices
X Wu, S Mei, M Bosman, N Raghavan, X Zhang, D Cha, K Li, KL Pey
Advanced Electronic Materials 1 (11), 1500130, 2015
252015
Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films
A Ranjan, N Raghavan, SJ O’Shea, S Mei, M Bosman, K Shubhakar, ...
Scientific reports 8 (1), 2854, 2018
222018
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices
S Mei, M Bosman, R Nagarajan, X Wu, KL Pey
Microelectronics Reliability 61, 71-77, 2016
112016
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics
A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 4A. 1-1-4A. 1-6, 2018
72018
Dynamic investigation of interface atom migration during heterostructure nanojoining
S Mei, L He, X Wu, J Sun, B Wang, X Xiong, L Sun
Nanoscale 6 (1), 405-411, 2014
72014
Stochastic modeling of FinFET degradation based on a resistor network embedded metropolis Monte Carlo method
S Mei, N Raghavan, M Bosman, KL Pey
IEEE Transactions on Electron Devices 65 (2), 440-447, 2018
52018
New understanding of dielectric breakdown in advanced FinFET devices—physical, electrical, statistical and multiphysics study
S Mei, N Raghavan, M Bosman, D Linten, G Groeseneken, N Horiguchi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2016
52016
Understanding the switching mechanism in RRAM using in-situ TEM
KL Pey, R Thamankar, M Sen, M Bosman, N Raghavan, K Shubhakar
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 36-37, 2016
52016
Boron Vacancies Causing Breakdown in 2D Layered Hexagonal Boron Nitride Dielectrics
A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...
IEEE Electron Device Letters 40 (8), 1321-1324, 2019
42019
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction
JH Lim, N Raghavan, S Mei, VB Naik, JH Kwon, SM Noh, B Liu, EH Toh, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 6-1-6D. 6-6, 2018
42018
Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
JH Lim, N Raghavan, S Mei, KH Lee, SM Noh, JH Kwon, E Quek, KL Pey
Microelectronic Engineering 178, 308-312, 2017
42017
Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight
K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ...
Microelectronics Reliability 64, 204-209, 2016
42016
Multiphysics based 3D percolation framework model for multi-stage degradation and breakdown in high-κ—Interfacial layer stacks
S Mei, N Raghavan, K Shubhakar, M Bosman, KL Pey
2016 IEEE International Reliability Physics Symposium (IRPS), 7A-2-1-7A-2-6, 2016
32016
Impact of Carbon Doping on Polysilicon Grain Size Distribution and Yield Enhancement for 40-nm Embedded Nonvolatile Memory Technology
L Luo, K Shubhakar, S Mei, N Raghavan, B Liu, JY Huang, Y Liu, ...
IEEE Transactions on Device and Materials Reliability 18 (1), 64-69, 2018
22018
Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacks
X Feng, N Raghavan, S Mei, L Du, KL Pey, H Wong
Microelectronic Engineering 178, 293-297, 2017
12017
Statistical basis and physical evidence for clustering model in FINFET degradation
S Mei, N Raghavan, M Bosman, KL Pey
2017 IEEE International Reliability Physics Symposium (IRPS), 3C-1.1-3C-1.6, 2017
12017
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device
L Luo, K Shubhakar, S Mei, N Raghavan, F Zhang, D Shum, KL Pey
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
2020
3D characterization of hard breakdown in RRAM device
S Mei, M Bosman, K Shubhakar, N Raghavan, L Ming, KL Pey
Microelectronic Engineering 216, 111042, 2019
2019
Control gate dummy for word line uniformity and method for producing the same
Laiqiang LUO, Sen MEI, Fangxin DENG, Zhiqiang Teo, Fan Zheng, Pinghui Li ...
US Patent 10,381,360, 2019
2019
New Insights into Dielectric Breakdown of MgO in STT-MRAM Devices
KL Pey, JH Lim, N Raghavan, S Mei, JH Kwon, VB Naik, K Yamane, ...
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 264-266, 2019
2019
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