Sen Mei
Title
Cited by
Cited by
Year
Evolution of Filament Formation in Ni/HfO2/SiOx/Si‐Based RRAM Devices
X Wu, S Mei, M Bosman, N Raghavan, X Zhang, D Cha, K Li, KL Pey
Advanced Electronic Materials 1 (11), 1500130, 2015
332015
Conductive atomic force microscope study of bipolar and threshold resistive switching in 2D hexagonal boron nitride films
A Ranjan, N Raghavan, SJ O’Shea, S Mei, M Bosman, K Shubhakar, ...
Scientific reports 8 (1), 1-9, 2018
322018
Compliance current dominates evolution of NiSi2 defect size in Ni/dielectric/Si RRAM devices
S Mei, M Bosman, R Nagarajan, X Wu, KL Pey
Microelectronics Reliability 61, 71-77, 2016
122016
Mechanism of soft and hard breakdown in hexagonal boron nitride 2D dielectrics
A Ranjan, N Raghavan, SJ O'Shea, S Mei, M Bosman, K Shubhakar, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 4A. 1-1-4A. 1-6, 2018
102018
Boron vacancies causing breakdown in 2D layered hexagonal boron nitride dielectrics
A Ranjan, N Raghavan, FM Puglisi, S Mei, A Padovani, L Larcher, ...
IEEE Electron Device Letters 40 (8), 1321-1324, 2019
82019
Conductive filament formation at grain boundary locations in polycrystalline HfO2-based MIM stacks: Computational and physical insight
K Shubhakar, S Mei, M Bosman, N Raghavan, A Ranjan, SJ O'Shea, ...
Microelectronics Reliability 64, 204-209, 2016
82016
Dynamic investigation of interface atom migration during heterostructure nanojoining
S Mei, L He, X Wu, J Sun, B Wang, X Xiong, L Sun
Nanoscale 6 (1), 405-411, 2014
82014
New understanding of dielectric breakdown in advanced FinFET devices—physical, electrical, statistical and multiphysics study
S Mei, N Raghavan, M Bosman, D Linten, G Groeseneken, N Horiguchi, ...
2016 IEEE International Electron Devices Meeting (IEDM), 15.5. 1-15.5. 4, 2016
62016
Area and pulsewidth dependence of bipolar TDDB in MgO magnetic tunnel junction
JH Lim, N Raghavan, S Mei, VB Naik, JH Kwon, SM Noh, B Liu, EH Toh, ...
2018 IEEE International Reliability Physics Symposium (IRPS), 6D. 6-1-6D. 6-6, 2018
52018
Stochastic modeling of FinFET degradation based on a resistor network embedded metropolis Monte Carlo method
S Mei, N Raghavan, M Bosman, KL Pey
IEEE Transactions on Electron Devices 65 (2), 440-447, 2018
52018
Asymmetric dielectric breakdown behavior in MgO based magnetic tunnel junctions
JH Lim, N Raghavan, S Mei, KH Lee, SM Noh, JH Kwon, E Quek, KL Pey
Microelectronic Engineering 178, 308-312, 2017
52017
Understanding the switching mechanism in RRAM using in-situ TEM
KL Pey, R Thamankar, M Sen, M Bosman, N Raghavan, K Shubhakar
2016 IEEE Silicon Nanoelectronics Workshop (SNW), 36-37, 2016
52016
Multiphysics based 3D percolation framework model for multi-stage degradation and breakdown in high-κ—Interfacial layer stacks
S Mei, N Raghavan, K Shubhakar, M Bosman, KL Pey
2016 IEEE International Reliability Physics Symposium (IRPS), 7A-2-1-7A-2-6, 2016
42016
Impact of Carbon Doping on Polysilicon Grain Size Distribution and Yield Enhancement for 40-nm Embedded Nonvolatile Memory Technology
L Luo, K Shubhakar, S Mei, N Raghavan, B Liu, JY Huang, Y Liu, ...
IEEE Transactions on Device and Materials Reliability 18 (1), 64-69, 2018
22018
3D characterization of hard breakdown in RRAM device
S Mei, M Bosman, K Shubhakar, N Raghavan, L Ming, KL Pey
Microelectronic Engineering 216, 111042, 2019
12019
New insights into dielectric breakdown of MgO in STT-MRAM devices
KL Pey, JH Lim, N Raghavan, S Mei, JH Kwon, VB Naik, K Yamane, ...
2019 Electron Devices Technology and Manufacturing Conference (EDTM), 264-266, 2019
12019
Statistical nature of hard breakdown recovery in high-κ dielectric stacks studied using ramped voltage stress
X Feng, N Raghavan, S Mei, S Dong, KL Pey, H Wong
Microelectronics Reliability 88, 164-168, 2018
12018
Role of metal nanocrystals on the breakdown statistics of flash memory high-κ stacks
X Feng, N Raghavan, S Mei, L Du, KL Pey, H Wong
Microelectronic Engineering 178, 293-297, 2017
12017
Statistical basis and physical evidence for clustering model in FINFET degradation
S Mei, N Raghavan, M Bosman, KL Pey
2017 IEEE International Reliability Physics Symposium (IRPS), 3C-1.1-3C-1.6, 2017
12017
Reliability and Breakdown Study of Erase Gate Oxide in Split-Gate Non-Volatile Memory Device
L Luo, K Shubhakar, S Mei, N Raghavan, F Zhang, D Shum, KL Pey
2020 IEEE International Reliability Physics Symposium (IRPS), 1-6, 2020
2020
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