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Vicknesh Sahmuganathan
Vicknesh Sahmuganathan
Applied Materials South East Asia Pte Ltd
Verified email at amat.com - Homepage
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Improved two-dimensional electron gas transport characteristics in AlGaN/GaN metal-insulator-semiconductor high electron mobility transistor with atomic layer-deposited Al2O3 …
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
Applied Physics Letters 95 (22), 2009
1362009
AlGaN/GaN two-dimensional-electron gas heterostructures on 200 mm diameter Si (111)
S Tripathy, VKX Lin, SB Dolmanan, JPY Tan, RS Kajen, LK Bera, SL Teo, ...
Applied Physics Letters 101 (8), 2012
1242012
High Microwave-Noise Performance of AlGaN/GaN MISHEMTs on Silicon With Gate Insulator Grown by ALD
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE electron device letters 31 (2), 96-98, 2009
852009
Direct current and microwave characteristics of sub-micron AlGaN/GaN high-electron-mobility transistors on 8-inch Si (111) substrate
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, JPY Tan, VK Lin, ...
Japanese Journal of Applied Physics 51 (11R), 111001, 2012
832012
Coherent emission from ultrathin-walled spiral InGaAs/GaAs quantum dot microtubes
F Li, Z Mi, S Vicknesh
Optics letters 34 (19), 2915-2917, 2009
772009
Optical microcavities on Si formed by self-assembled InGaAs/GaAs quantum dot microtubes
S Vicknesh, F Li, Z Mi
Applied Physics Letters 94 (8), 2009
772009
Improved Linearity for Low-Noise Applications in 0.25- GaN MISHEMTs Using ALD as Gate Dielectric
ZH Liu, GI Ng, S Arulkumaran, YKT Maung, KL Teo, SC Foo, ...
IEEE Electron Device Letters 31 (8), 803-805, 2010
762010
Improved Power Device Figure-of-Merit (4.0× 108 V2 Ω-1 cm-2) in AlGaN/GaN High-Electron-Mobility Transistors on High-Resistivity 4-in. Si
S Arulkumaran, S Vicknesh, NG Ing, SL Selvaraj, T Egawa
Applied physics express 4 (8), 084101, 2011
742011
Demonstration of submicron-gate AlGaN/GaN high-electron-mobility transistors on silicon with complementary metal–oxide–semiconductor-compatible non-gold metal stack
S Arulkumaran, GI Ng, S Vicknesh, H Wang, KS Ang, CM Kumar, KL Teo, ...
Applied Physics Express 6 (1), 016501, 2012
712012
Enhanced Breakdown Voltage With High Johnson's Figure-of-Merit in 0.3-T-gate AlGaN/GaN HEMTs on Silicon byTreatment
S Arulkumaran, GI Ng, S Vicknesh
IEEE electron device letters 34 (11), 1364-1366, 2013
672013
Luminescence properties of ZnO layers grown on Si-on-insulator substrates
B Kumar, H Gong, S Vicknesh, SJ Chua, S Tripathy
Applied physics letters 89 (14), 2006
522006
High Johnson’s figure of merit (8.32 THz· V) in 0.15-µm conventional T-gate AlGaN/GaN HEMTs on silicon
K Ranjan, S Arulkumaran, GI Ng, S Vicknesh
Applied Physics Express 7 (4), 044102, 2014
412014
High-frequency microwave noise characteristics of InAlN/GaN high-electron mobility transistors on Si (111) substrate
S Arulkumaran, K Ranjan, GI Ng, CMM Kumar, S Vicknesh, SB Dolmanan, ...
IEEE Electron Device Letters 35 (10), 992-994, 2014
402014
Improved recess‐ohmics in AlGaN/GaN high‐electron‐mobility transistors with AlN spacer layer on silicon substrate
S Arulkumaran, NG Ing, V Sahmuganathan, L Zhihong, B Maung
physica status solidi c 7 (10), 2412-2414, 2010
322010
Low specific on-resistance AlGaN/AlN/GaN high electron mobility transistors on high resistivity silicon substrate
S Arulkumaran, S Vicknesh, GI Ng, ZH Liu, M Bryan, CH Lee
Electrochemical and Solid-State Letters 13 (5), H169, 2010
312010
Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al2O3 dielectric gate stack
MJ Anand, GI Ng, S Vicknesh, S Arulkumaran, K Ranjan
physica status solidi (c) 10 (11), 1421-1425, 2013
292013
Effect of OFF-state stress induced electric field on trapping in AlGaN/GaN high electron mobility transistors on Si (111)
MJ Anand, GI Ng, S Arulkumaran, M Kumar, K Ranjan, S Vicknesh, ...
Applied Physics Letters 106 (8), 2015
282015
Fabrication of deeply undercut GaN-based microdisk structures on silicon platforms
S Vicknesh, S Tripathy, VKX Lin, LS Wang, SJ Chua
Applied physics letters 90 (7), 2007
272007
Micro-Raman probing of residual stress in freestanding GaN-based micromechanical structures fabricated by a dry release technique
S Tripathy, VKX Lin, S Vicknesh, SJ Chua
Journal of applied physics 101 (6), 2007
252007
Etching characteristics of HBr-based chemistry on InP using the ICP technique
S Vicknesh, A Ramam
Journal of the Electrochemical Society 151 (12), C772, 2004
252004
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