| Compensation mechanism for N acceptors in ZnO EC Lee, YS Kim, YG Jin, KJ Chang Physical Review B 64 (8), 085120, 2001 | 526 | 2001 |
| Stability and electronic structures of native defects in single-layer JY Noh, H Kim, YS Kim Physical Review B 89 (20), 205417, 2014 | 347 | 2014 |
| Rich Variety of Defects in ZnO via an Attractive Interaction between O Vacancies <?format ?>and Zn Interstitials: Origin of -Type Doping YS Kim, CH Park Physical review letters 102 (8), 086403, 2009 | 299 | 2009 |
| Monolayer MoS2 Bandgap Modulation by Dielectric Environments and Tunable Bandgap Transistors J Ryou, YS Kim, S Kc, K Cho Scientific reports 6 (1), 29184, 2016 | 283 | 2016 |
| The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy P Vancsó, GZ Magda, J Pető, JY Noh, YS Kim, C Hwang, LP Biró, ... Scientific reports 6 (1), 29726, 2016 | 278 | 2016 |
| Tailoring Vacancies Far Beyond Intrinsic Levels Changes the Carrier Type and Optical Response in Monolayer MoSe2−x Crystals M Mahjouri-Samani, L Liang, A Oyedele, YS Kim, M Tian, N Cross, ... Nano letters 16 (8), 5213-5220, 2016 | 159 | 2016 |
| Instability of amorphous oxide semiconductors via carrier‐mediated structural transition between disorder and peroxide state HH Nahm, YS Kim, DH Kim physica status solidi (b) 249 (6), 1277-1281, 2012 | 127 | 2012 |
| First-principles study of hydrogen adsorption on carbon nanotube surfaces EC Lee, YS Kim, YG Jin, KJ Chang Physical Review B 66 (7), 073415, 2002 | 119 | 2002 |
| Human histone H3K79 methyltransferase DOT1L methyltransferase binds actively transcribing RNA polymerase II to regulate gene expression SK Kim, I Jung, H Lee, K Kang, M Kim, K Jeong, CS Kwon, YM Han, ... Journal of Biological Chemistry 287 (47), 39698-39709, 2012 | 111 | 2012 |
| Revival of ferroelectric memories based on emerging fluorite‐structured ferroelectrics JY Park, DH Choe, DH Lee, GT Yu, K Yang, SH Kim, GH Park, SG Nam, ... Advanced Materials 35 (43), 2204904, 2023 | 109 | 2023 |
| Progress, challenges, and opportunities in oxide semiconductor devices: a key building block for applications ranging from display backplanes to 3D integrated semiconductor chips T Kim, CH Choi, JS Hur, D Ha, BJ Kuh, Y Kim, MH Cho, S Kim, JK Jeong Advanced Materials 35 (43), 2204663, 2023 | 99 | 2023 |
| Promoter methylation of specific genes is associated with the phenotype and progression of colorectal adenocarcinomas JC Kim, JS Choi, SA Roh, DH Cho, TW Kim, YS Kim Annals of surgical oncology 17, 1767-1776, 2010 | 94 | 2010 |
| Vibrational Properties of h-BN and h-BN-Graphene Heterostructures Probed by Inelastic Electron Tunneling Spectroscopy S Jung, M Park, J Park, TY Jeong, HJ Kim, K Watanabe, T Taniguchi, ... Scientific reports 5 (1), 16642, 2015 | 85 | 2015 |
| Cation composition effects on electronic structures of In-Sn-Zn-O amorphous semiconductors JY Noh, H Kim, HH Nahm, YS Kim, D Hwan Kim, BD Ahn, JH Lim, ... Journal of Applied Physics 113 (18), 2013 | 80 | 2013 |
| Length-dependent lattice thermal conductivity of graphene and its macroscopic limit M Park, SC Lee, YS Kim Journal of Applied Physics 114 (5), 2013 | 77 | 2013 |
| Twin-driven thermoelectric figure-of-merit enhancement of Bi 2 Te 3 nanowires HS Shin, SG Jeon, J Yu, YS Kim, HM Park, JY Song Nanoscale 6 (11), 6158-6165, 2014 | 75 | 2014 |
| Spectroscopic studies of atomic defects and bandgap renormalization in semiconducting monolayer transition metal dichalcogenides TY Jeong, H Kim, SJ Choi, K Watanabe, T Taniguchi, KJ Yee, YS Kim, ... Nature communications 10 (1), 3825, 2019 | 74 | 2019 |
| Bistability of hydrogen in ZnO: Origin of doping limit and persistent photoconductivity HH Nahm, CH Park, YS Kim Scientific Reports 4 (1), 4124, 2014 | 73 | 2014 |
| Deep-to-shallow level transition of Re and Nb dopants in monolayer with dielectric environments JY Noh, H Kim, M Park, YS Kim Physical Review B 92 (11), 115431, 2015 | 71 | 2015 |
| First-principles study of the compensation mechanism in N-doped ZnO EC Lee, YS Kim, YG Jin, KJ Chang Physica B: Condensed Matter 308, 912-915, 2001 | 69 | 2001 |
