Emmanuel Dubois
Emmanuel Dubois
IEMN - Institut d'Electronique, de Microélectronique et de Nanotechnologie
Verified email at isen.iemn.univ-lille1.fr
Cited by
Cited by
Nanooxidation using a scanning probe microscope: An analytical model based on field induced oxidation
D Stievenard, PA Fontaine, E Dubois
Applied Physics Letters 70 (24), 3272-3274, 1997
Low temperature implementation of dopant-segregated band-edge metallic S/D junctions in thin-body SOI p-MOSFETs
G Larrieu, E Dubois, R Valentin, N Breil, F Danneville, G Dambrine, ...
2007 IEEE International Electron Devices Meeting, 147-150, 2007
Arsenic-segregated rare-earth silicide junctions: reduction of Schottky barrier and integration in metallic n-MOSFETs on SOI
G Larrieu, DA Yarekha, E Dubois, N Breil, O Faynot
IEEE Electron Device Letters 30 (12), 1266-1268, 2009
Characterization of scanning tunneling microscopy and atomic force microscopy-based techniques for nanolithography on hydrogen-passivated silicon
PA Fontaine, E Dubois, D Stievenard
Journal of applied physics 84 (4), 1776-1781, 1998
Kinetics of scanned probe oxidation: space-charge limited growth
E Dubois, JL Bubendorff
Journal of Applied Physics 87 (11), 8148-8154, 2000
Measurement of low Schottky barrier heights applied to metallic source/drain metal–oxide–semiconductor field effect transistors
E Dubois, G Larrieu
Journal of applied physics 96 (1), 729-737, 2004
Formation of platinum-based silicide contacts: Kinetics, stoichiometry, and current drive capabilities
G Larrieu, E Dubois, X Wallart, X Baie, J Katcki
Journal of Applied Physics 94 (12), 7801-7810, 2003
Nanometer scale lithography on silicon, titanium and PMMA resist using scanning probe microscopy
E Dubois, JL Bubbendorff
Solid-State Electronics 43 (6), 1085-1089, 1999
ASUR++: a design notation for mobile mixed systems
E Dubois, P Gray, L Nigay
International Conference on Mobile Human-Computer Interaction, 123-139, 2002
Classification Space for Augmented Surgery, an Augmented Reality Case Study.
E Dubois, L Nigay, J Troccaz, O Chavanon, L Carrat
Interact, 353-359, 1999
Short-channel effect immunity and current capability of sub-0.1-micron MOSFET's using a recessed channel
PH Bricout, E Dubois
IEEE Transactions on Electron Devices 43 (8), 1251-1255, 1996
Low Schottky barrier source/drain for advanced MOS architecture: device design and material considerations
E Dubois, G Larrieu
Solid-State Electronics 46 (7), 997-1004, 2002
The roly-poly mouse: Designing a rolling input device unifying 2d and 3d interaction
G Perelman, M Serrano, M Raynal, C Picard, M Derras, E Dubois
Proceedings of the 33rd Annual ACM Conference on Human Factors in Computing …, 2015
Schottky-barrier source/drain MOSFETs on ultrathin SOI body with a tungsten metallic midgap gate
G Larrieu, E Dubois
IEEE electron device letters 25 (12), 801-803, 2004
Very low Schottky barrier to n-type silicon with PtEr-stack silicide
X Tang, J Katcki, E Dubois, N Reckinger, J Ratajczak, G Larrieu, ...
Solid-State Electronics 47 (11), 2105-2111, 2003
Chirurgie augmentée: un cas de réalité augmentée; Conception et réalisation centrées sur l'utilisateur
E Dubois
Université Joseph-Fourier-Grenoble I, 2001
Integration of PtSi-based Schottky-barrier p-MOSFETs with a midgap tungsten gate
G Larrieu, E Dubois
IEEE transactions on electron devices 52 (12), 2720-2726, 2005
Oxidation-assisted graphene heteroepitaxy on copper foil
N Reckinger, X Tang, F Joucken, L Lajaunie, R Arenal, E Dubois, ...
Nanoscale 8 (44), 18751-18759, 2016
Consistency in augmented reality systems
E Dubois, L Nigay, J Troccaz
IFIP International Conference on Engineering for Human-Computer Interaction …, 2001
Assessing continuity and compatibility in augmented reality systems
E Dubois, L Nigay, J Troccaz
Universal Access in the Information Society 1 (4), 263-273, 2002
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