Federico Panciera
Federico Panciera
C2N, CNRS/University of Paris-Saclay
Verified email at c2n.upsaclay.fr - Homepage
Title
Cited by
Cited by
Year
Interface dynamics and crystal phase switching in GaAs nanowires
D Jacobsson, F Panciera, J Tersoff, MC Reuter, S Lehmann, S Hofmann, ...
Nature 531 (7594), 317-322, 2016
2612016
Synthesis of nanostructures in nanowires using sequential catalyst reactions
F Panciera, YC Chou, MC Reuter, D Zakharov, EA Stach, S Hofmann, ...
Nature materials 14 (8), 820-825, 2015
642015
Atomic step flow on a nanofacet
JC Harmand, G Patriarche, F Glas, F Panciera, I Florea, JL Maurice, ...
Physical review letters 121 (16), 166101, 2018
622018
Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor
F Panciera, K Hoummada, M Gregoire, M Juhel, N Bicais, D Mangelinck
Applied Physics Letters 99 (5), 051911, 2011
402011
Controlling nanowire growth through electric field-induced deformation of the catalyst droplet
F Panciera, MM Norton, SB Alam, S Hofmann, K Mølhave, FM Ross
Nature communications 7 (1), 1-8, 2016
392016
End-of-range defects in germanium and their role in boron deactivation
F Panciera, PF Fazzini, M Collet, J Boucher, E Bedel, F Cristiano
Applied Physics Letters 97 (1), 012105, 2010
262010
Atom probe tomography for advanced metallization
D Mangelinck, F Panciera, K Hoummada, M El Kousseifi, C Perrin, ...
Microelectronic engineering 120, 19-33, 2014
252014
Progress in the understanding of Ni silicide formation for advanced MOS structures
D Mangelinck, K Hoummada, F Panciera, M El Kousseifi, I Blum, ...
physica status solidi (a) 211 (1), 152-165, 2014
242014
Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis
F Panciera, K Hoummada, M Gregoire, M Juhel, F Lorut, N Bicais, ...
Microelectronic engineering 107, 167-172, 2013
222013
Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold
F Panciera, S Baudot, K Hoummada, M Gregoire, M Juhel, D Mangelinck
Applied Physics Letters 100 (20), 201909, 2012
192012
Phase selection in self-catalyzed GaAs nanowires
F Panciera, Z Baraissov, G Patriarche, VG Dubrovskii, F Glas, L Travers, ...
Nano Letters 20 (3), 1669-1675, 2020
182020
Creating new VLS silicon nanowire contact geometries by controlling catalyst migration
SB Alam, F Panciera, O Hansen, K Mølhave, FM Ross
Nano letters 15 (10), 6535-6541, 2015
172015
Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate
F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ...
Scripta Materialia 78, 9-12, 2014
172014
Pt redistribution in N-MOS transistors during Ni salicide process
F Panciera, K Hoummada, M Gregoire, M Juhel, D Mangelinck
Microelectronic engineering 107, 173-177, 2013
152013
Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si
M Mastromatteo, D De Salvador, E Napolitani, F Panciera, G Bisognin, ...
Physical Review B 82 (15), 155323, 2010
152010
Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks
Z Essa, C Gaumer, A Pakfar, M Gros-Jean, M Juhel, F Panciera, ...
Applied Physics Letters 101 (18), 182901, 2012
132012
Surface crystallization of liquid Au–Si and its impact on catalysis
F Panciera, J Tersoff, AD Gamalski, MC Reuter, D Zakharov, EA Stach, ...
Advanced Materials 31 (5), 1806544, 2019
102019
Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy
YC Chou, F Panciera, MC Reuter, EA Stach, FM Ross
Chemical Communications 52 (33), 5686-5689, 2016
102016
Investigation of fluorine three-dimensional redistribution during solid-phase-epitaxial–regrowth of amorphous Si
F Panciera, K Hoummada, M Mastromatteo, D De Salvador, E Napolitani, ...
Applied Physics Letters 101 (10), 103113, 2012
82012
Ni (Pt)-silicide contacts on CMOS devices: Impact of substrate nature and Pt concentration on the phase formation
F Panciera, K Hoummada, C Perrin, M El Kousseifi, R Pantel, M Descoins, ...
Microelectronic engineering 120, 34-40, 2014
72014
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