| Interface dynamics and crystal phase switching in GaAs nanowires D Jacobsson, F Panciera, J Tersoff, MC Reuter, S Lehmann, S Hofmann, ... Nature 531 (7594), 317-322, 2016 | 355 | 2016 |
| Atomic step flow on a nanofacet JC Harmand, G Patriarche, F Glas, F Panciera, I Florea, JL Maurice, ... Physical review letters 121 (16), 166101, 2018 | 137 | 2018 |
| Phase selection in self-catalyzed GaAs nanowires F Panciera, Z Baraissov, G Patriarche, VG Dubrovskii, F Glas, L Travers, ... Nano letters 20 (3), 1669-1675, 2020 | 93 | 2020 |
| Synthesis of nanostructures in nanowires using sequential catalyst reactions F Panciera, YC Chou, MC Reuter, D Zakharov, EA Stach, S Hofmann, ... Nature materials 14 (8), 820-825, 2015 | 90 | 2015 |
| Controlling nanowire growth through electric field-induced deformation of the catalyst droplet F Panciera, MM Norton, SB Alam, S Hofmann, K Mřlhave, FM Ross Nature communications 7 (1), 12271, 2016 | 56 | 2016 |
| Three dimensional distributions of arsenic and platinum within NiSi contact and gate of an n-type transistor F Panciera, K Hoummada, M Gregoire, M Juhel, N Bicais, D Mangelinck Applied Physics Letters 99 (5), 051911, 2011 | 44 | 2011 |
| Atom probe tomography for advanced metallization D Mangelinck, F Panciera, K Hoummada, M El Kousseifi, C Perrin, ... Microelectronic engineering 120, 19-33, 2014 | 29 | 2014 |
| End-of-range defects in germanium and their role in boron deactivation F Panciera, PF Fazzini, M Collet, J Boucher, E Bedel, F Cristiano Applied Physics Letters 97 (1), 012105, 2010 | 28 | 2010 |
| Progress in the understanding of Ni silicide formation for advanced MOS structures D Mangelinck, K Hoummada, F Panciera, M El Kousseifi, I Blum, ... physica status solidi (a) 211 (1), 152-165, 2014 | 27 | 2014 |
| Atom probe tomography of SRAM transistors: Specimen preparation methods and analysis F Panciera, K Hoummada, M Gregoire, M Juhel, F Lorut, N Bicais, ... Microelectronic engineering 107, 167-172, 2013 | 27 | 2013 |
| Band-gap landscape engineering in large-scale 2D semiconductor van der Waals heterostructures V Zatko, SMM Dubois, F Godel, C Carrétéro, A Sander, S Collin, ... ACS nano 15 (4), 7279-7289, 2021 | 23 | 2021 |
| Creating new VLS silicon nanowire contact geometries by controlling catalyst migration SB Alam, F Panciera, O Hansen, K Mřlhave, FM Ross Nano letters 15 (10), 6535-6541, 2015 | 22 | 2015 |
| Direct epitaxial growth of θ-Ni2Si by reaction of a thin Ni (10 at.% Pt) film with Si (1 0 0) substrate F Panciera, D Mangelinck, K Hoummada, M Texier, M Bertoglio, ... Scripta Materialia 78, 9-12, 2014 | 22 | 2014 |
| Selective wet etching of silicon germanium in composite vertical nanowires Z Baraissov, A Pacco, S Koneti, G Bisht, F Panciera, F Holsteyns, ... ACS applied materials & interfaces 11 (40), 36839-36846, 2019 | 20 | 2019 |
| Surface crystallization of liquid Au–Si and its impact on catalysis F Panciera, J Tersoff, AD Gamalski, MC Reuter, D Zakharov, EA Stach, ... Advanced Materials 31 (5), 1806544, 2019 | 20 | 2019 |
| Three-dimensional distribution of Al in high-k metal gate: Impact on transistor voltage threshold F Panciera, S Baudot, K Hoummada, M Gregoire, M Juhel, D Mangelinck Applied Physics Letters 100 (20), 201909, 2012 | 19 | 2012 |
| Nanowire growth kinetics in aberration corrected environmental transmission electron microscopy YC Chou, F Panciera, MC Reuter, EA Stach, FM Ross Chemical Communications 52 (33), 5686-5689, 2016 | 16 | 2016 |
| Pt redistribution in N-MOS transistors during Ni salicide process F Panciera, K Hoummada, M Gregoire, M Juhel, D Mangelinck Microelectronic engineering 107, 173-177, 2013 | 16 | 2013 |
| Fluorine redistribution and incorporation during solid phase epitaxy of preamorphized Si M Mastromatteo, D De Salvador, E Napolitani, F Panciera, G Bisognin, ... Physical Review B 82 (15), 155323, 2010 | 15 | 2010 |
| Evaluation and modeling of lanthanum diffusion in TiN/La2O3/HfSiON/SiO2/Si high-k stacks Z Essa, C Gaumer, A Pakfar, M Gros-Jean, M Juhel, F Panciera, ... Applied Physics Letters 101 (18), 182901, 2012 | 13 | 2012 |
Ross, F. M.MITVerified email at mit.edu
