A rhombohedral ferroelectric phase in epitaxially-strained Hf0. 5Zr0. 5O2 thin films Y Wei, P Nukala, M Salverda, S Matzen, HJ Zhao, J Momand, A Everhardt, ... Nature Materials 17, 1095–1100, 2018 | 393 | 2018 |
Reversible oxygen migration and phase transitions in hafnia-based ferroelectric devices P Nukala, M Ahmadi, Y Wei, S De Graaf, E Stylianidis, T Chakrabortty, ... Science 372 (6542), 630-635, 2021 | 181 | 2021 |
Direct Epitaxial Growth of Polar (1 – x)HfO2–(x)ZrO2 Ultrathin Films on Silicon P Nukala, J Antoja-Lleonart, Y Wei, L Yedra, B Dkhil, B Noheda ACS applied electronic materials 1 (12), 2585-2593, 2019 | 72 | 2019 |
Magnetic Tunnel Junctions Based on Ferroelectric Tunnel Barriers Y Wei, S Matzen, T Maroutian, G Agnus, M Salverda, P Nukala, Q Chen, ... Physical Review Applied 12 (3), 031001, 2019 | 59 | 2019 |
Guidelines for the stabilization of a polar rhombohedral phase in epitaxial Hf0.5Zr0.5O2 thin films P Nukala, Y Wei, V de Haas, Q Guo, J Antoja-Lleonart, B Noheda Ferroelectrics 569 (1), 148-163, 2020 | 46 | 2020 |
Magneto-ionic control of spin polarization in multiferroic tunnel junctions Y Wei, S Matzen, CP Quinteros, T Maroutian, G Agnus, P Lecoeur, ... npj Quantum Materials 4 (1), 62, 2019 | 37 | 2019 |
Structure and magnetic properties of the perovskite YCo0. 5Fe0. 5O3 Y Wei, H Gui, Z Zhao, J Li, Y Liu, S Xin, X Li, W Xie AIP Advances 4 (12), 2014 | 35 | 2014 |
A stable rhombohedral phase in ferroelectric Hf(Zr)1+xO2 capacitor with ultralow coercive field Y Wang, L Tao, R Guzman, Q Luo, W Zhou, Y Yang, Y Wei, Y Liu, P Jiang, ... Science 381 (6657), 558-563, 2023 | 34 | 2023 |
The effect of hydrogen ordering on the electronic and magnetic properties of the strontium vanadium oxyhydride Y Wei, H Gui, X Li, Z Zhao, YH Zhao, W Xie Journal of Physics: Condensed Matter 27 (20), 206001, 2015 | 20 | 2015 |
In situ heating studies on temperature-induced phase transitions in epitaxial Hf0. 5Zr0. 5O2/La0. 67Sr0. 33MnO3 heterostructures P Nukala, M Ahmadi, J Antoja-Lleonart, S Graaf, Y Wei, HW Zandbergen, ... Applied Physics Letters 118 (6), 2021 | 16 | 2021 |
Strain Relaxation in “2D/2D and 2D/3D Systems”: Highly Textured Mica/Bi2Te3, Sb2Te3/Bi2Te3, and Bi2Te3/GeTe Heterostructures H Zhang, DT Yimam, S de Graaf, J Momand, PA Vermeulen, Y Wei, ... ACS nano 15 (2), 2869-2879, 2021 | 16 | 2021 |
Synaptic behaviour in ferroelectric epitaxial rhombohedral Hf0. 5Zr0. 5O2 thin films Y Wei, G Vats, B Noheda Neuromorphic Computing and Engineering 2 (4), 044007, 2022 | 9 | 2022 |
npj Quantum Mater. 4, 62 (2019) Y Wei, S Matzen, CP Quinteros, T Maroutian, G Agnus, P Lecoeur, ... | 5 | |
Direct observation of reversible oxygen migration and phase transitions in ferroelectric Hf0. 5Zr0. 5O2 thin-film devices P Nukala, M Ahmadi, S de Graaf, BJ Kooi, B Noheda, H Zandbergen, ... Microscopy and Microanalysis 27 (S1), 956-959, 2021 | 4 | 2021 |
Operando Observation of Reversible Oxygen Migration and Phase Transitions in Hafnia-based Ferroelectric Devices P Nukala, M Ahmadi, Y Wei, S de Graaf, E Stylianidis, T Chakrabortty, ... Microscopy and Microanalysis 28 (S1), 2268-2269, 2022 | 2 | 2022 |
First-principle investigations of K2NiF4-type double perovskite oxides La4B′ B ″O8 (B′ B ″= Fe, Co, Ni) H Mao, Y Wei, H Gui, X Li, Z Zhao, W Xie Journal of Applied Physics 115 (21), 2014 | 2 | 2014 |
Investigating the Electromechanical Behavior of Unconventionally Ferroelectric Hf0.5Zr0.5O2‐Based Capacitors Through Operando Nanobeam X‐Ray Diffraction E Stylianidis, P Surabhi, R Hamming‐Green, M Salverda, Y Wei, ... Advanced Electronic Materials 9 (6), 2201298, 2023 | 1 | 2023 |
Multi-state nonvolatile capacitances in HfO2-based ferroelectric capacitor for neuromorphic computing S Wu, X Zhang, R Cao, K Zhou, J Lu, C Li, Y Yang, D Shang, Y Wei, ... Applied Physics Letters 124 (10), 2024 | | 2024 |
Reliable ferroelectricity down to cryogenic temperature in wake-up free Hf0.5Zr0.5O2 thin films by thermal atomic layer deposition S Wu, R Cao, H Jiang, Y Li, X Zhang, Y Yang, Y Wang, Y Wei, Q Liu Journal of Semiconductors 45 (3), 032301-1-032301-5, 2024 | | 2024 |
Rhombohedral Hf0. 5Zr0. 5O2 thin films: Ferroelectricity and devices Y Wei | | 2020 |