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Fu-Jen Hsu
Fu-Jen Hsu
Other namesFrane Hsu
Fast SiC Semiconductor Inc.
Verified email at fastsic.com
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Year
High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier
FJ Hsu, CT Yen, CC Hung, HT Hung, CY Lee, LS Lee, YF Huang, ...
2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017
772017
Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping
CT Yen, CC Hung, HT Hung, CY Lee, LS Lee, YF Huang, FJ Hsu
Applied Physics Letters 108 (1), 2016
312016
Oxide breakdown reliability of SiC MOSFET
CT Yen, HY Lee, CC Hung, CY Lee, LS Lee, FJ Hsu, KT Chu
2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2019
292019
Avalanche ruggedness and reverse-bias reliability of SiC MOSFET with integrated junction barrier controlled Schottky rectifier
CT Yen, FJ Hsu, CC Hung, CY Lee, LS Lee, YF Li, KT Chu
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
202018
Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs
DS Chao, HY Shih, JY Jiang, CF Huang, CY Chiang, CS Ku, CT Yen, ...
Japanese Journal of Applied Physics 58 (SB), SBBD08, 2019
132019
Short-circuit ruggedness analysis of SiC JMOS and DMOS
FJ Hsu, CT Yen, CC Hung, KT Chu, LS Lee, CY Lee
2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019
122019
High accuracy large-signal SPICE model for silicon carbide MOSFET
FJ Hsu, CT Yen, CC Hung, CY Lee, LS Lee, KT Chu, YF Li
2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018
122018
A dynamic switching response improved SPICE model for SiC MOSFET with non-linear parasitic capacitance
FJ Hsu, CC Hung, KT Chu, LS Lee, CY Lee
2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2020
72020
Negative bias temperature instability of SiC MOSFET
CT Yen, HT Hung, CC Hung, CY Lee, HY Lee, LS Lee, YF Huang, ...
Materials Science Forum 858, 595-598, 2016
72016
Radiation influence comparison between SiC JMOS and DMOS
FJ Hsu, CC Hung, KT Chu, LS Lee, WB Yeh, CY Lee, DS Chao, JY Jiang, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
62020
Design consideration of low capacitance SiC JMOS for adapting high-speed operation
FJ Hsu, CC Hung, KT Chu, LS Lee, CY Lee, JY Jiang, CF Huang
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
42020
Negative bias temperature instability on subthreshold swing of SiC MOSFET
CT Yen, HT Hung, CC Hung, LS Lee, CY Lee, YF Huang, FJ Hsu, ...
2016 IEEE European Conference on Silicon Carbide & Related Materials (ECSCRM), 2016
32016
Communication system between electric bikes and communication method thereof
Y Chang, WH Chieng, SL Jeng, S Cheng, FJ Hsu, BH Lue, CC Wu, ...
US Patent 9,271,328, 2016
22016
Impact of Layout Arrangement on Surge Current and Avalanche Robustness of Silicon Carbide JBS Diodes
FJ Hsu, HT Hung, CT Yen
2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023
12023
A Highly Integrated Sensorless Field Oriented Control BLDC/PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®)
FJ Hsu, CT Yen, HT Hung, GW Lin, CF Huang, LS Lin, IC Lin, CF Huang, ...
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022
12022
Wide bandgap semiconductor device with adjustable voltage level
FJ Hsu, CC Hung, YF Huang, CT Yen, CY Lee
US Patent 9,761,703, 2017
12017
silicon carbide semiconductor device
CT Yen, HT Hung, FJ Hsu
US Patent App. 18/490,975, 2024
2024
Silicon carbide semiconductor device
CT Yen, HT Hung, FJ Hsu
US Patent App. 18/155,520, 2023
2023
Silicon carbide semiconductor device
CT Yen, HT Hung, FJ Hsu
US Patent App. 18/155,524, 2023
2023
Silicon carbide semiconductor device
CT Yen, HT Hung, FJ Hsu
US Patent App. 17/875,158, 2023
2023
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