High efficiency high reliability SiC MOSFET with monolithically integrated Schottky rectifier FJ Hsu, CT Yen, CC Hung, HT Hung, CY Lee, LS Lee, YF Huang, ... 2017 29th International Symposium on Power Semiconductor Devices and IC's …, 2017 | 77 | 2017 |
Negative bias temperature instability of SiC MOSFET induced by interface trap assisted hole trapping CT Yen, CC Hung, HT Hung, CY Lee, LS Lee, YF Huang, FJ Hsu Applied Physics Letters 108 (1), 2016 | 31 | 2016 |
Oxide breakdown reliability of SiC MOSFET CT Yen, HY Lee, CC Hung, CY Lee, LS Lee, FJ Hsu, KT Chu 2019 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2019 | 29 | 2019 |
Avalanche ruggedness and reverse-bias reliability of SiC MOSFET with integrated junction barrier controlled Schottky rectifier CT Yen, FJ Hsu, CC Hung, CY Lee, LS Lee, YF Li, KT Chu 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 20 | 2018 |
Influence of displacement damage induced by neutron irradiation on effective carrier density in 4H-SiC SBDs and MOSFETs DS Chao, HY Shih, JY Jiang, CF Huang, CY Chiang, CS Ku, CT Yen, ... Japanese Journal of Applied Physics 58 (SB), SBBD08, 2019 | 13 | 2019 |
Short-circuit ruggedness analysis of SiC JMOS and DMOS FJ Hsu, CT Yen, CC Hung, KT Chu, LS Lee, CY Lee 2019 31st International Symposium on Power Semiconductor Devices and ICs …, 2019 | 12 | 2019 |
High accuracy large-signal SPICE model for silicon carbide MOSFET FJ Hsu, CT Yen, CC Hung, CY Lee, LS Lee, KT Chu, YF Li 2018 IEEE 30th International Symposium on Power Semiconductor Devices and …, 2018 | 12 | 2018 |
A dynamic switching response improved SPICE model for SiC MOSFET with non-linear parasitic capacitance FJ Hsu, CC Hung, KT Chu, LS Lee, CY Lee 2020 IEEE Workshop on Wide Bandgap Power Devices and Applications in Asia …, 2020 | 7 | 2020 |
Negative bias temperature instability of SiC MOSFET CT Yen, HT Hung, CC Hung, CY Lee, HY Lee, LS Lee, YF Huang, ... Materials Science Forum 858, 595-598, 2016 | 7 | 2016 |
Radiation influence comparison between SiC JMOS and DMOS FJ Hsu, CC Hung, KT Chu, LS Lee, WB Yeh, CY Lee, DS Chao, JY Jiang, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 6 | 2020 |
Design consideration of low capacitance SiC JMOS for adapting high-speed operation FJ Hsu, CC Hung, KT Chu, LS Lee, CY Lee, JY Jiang, CF Huang 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 4 | 2020 |
Negative bias temperature instability on subthreshold swing of SiC MOSFET CT Yen, HT Hung, CC Hung, LS Lee, CY Lee, YF Huang, FJ Hsu, ... 2016 IEEE European Conference on Silicon Carbide & Related Materials (ECSCRM), 2016 | 3 | 2016 |
Communication system between electric bikes and communication method thereof Y Chang, WH Chieng, SL Jeng, S Cheng, FJ Hsu, BH Lue, CC Wu, ... US Patent 9,271,328, 2016 | 2 | 2016 |
Impact of Layout Arrangement on Surge Current and Avalanche Robustness of Silicon Carbide JBS Diodes FJ Hsu, HT Hung, CT Yen 2023 35th International Symposium on Power Semiconductor Devices and ICs …, 2023 | 1 | 2023 |
A Highly Integrated Sensorless Field Oriented Control BLDC/PMSM Inverter with 99% Efficiency Enabled by an All-in-one System Integrated Full SiC Intelligent Power Module (sIPM®) FJ Hsu, CT Yen, HT Hung, GW Lin, CF Huang, LS Lin, IC Lin, CF Huang, ... 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA …, 2022 | 1 | 2022 |
Wide bandgap semiconductor device with adjustable voltage level FJ Hsu, CC Hung, YF Huang, CT Yen, CY Lee US Patent 9,761,703, 2017 | 1 | 2017 |
silicon carbide semiconductor device CT Yen, HT Hung, FJ Hsu US Patent App. 18/490,975, 2024 | | 2024 |
Silicon carbide semiconductor device CT Yen, HT Hung, FJ Hsu US Patent App. 18/155,520, 2023 | | 2023 |
Silicon carbide semiconductor device CT Yen, HT Hung, FJ Hsu US Patent App. 18/155,524, 2023 | | 2023 |
Silicon carbide semiconductor device CT Yen, HT Hung, FJ Hsu US Patent App. 17/875,158, 2023 | | 2023 |