B. Gunnar Malm

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Mikael ÖstlingKTH Royal Institute of TechnologyVerified email at kth.se
Carl-Mikael ZetterlingKTHVerified email at kth.se
Per-Erik HellströmKTH Royal Institute of TechnologyVerified email at kth.se
Luigia LanniKTH Royal Institute of TechnologyVerified email at intel.com
Johan ÅkermanProfessor of Experimental Physics (spintronics), University of GothenburgVerified email at physics.gu.se
Anders EklundResearch Scientist - SINTEFVerified email at sintef.no
Ana RusuProfessor of Electronic Circuits and Systems, KTH Royal Institute of Technology, EECS SchoolVerified email at kth.se
Reza GhandiPrincipal Engineer at GE ResearchVerified email at ge.com
Saul RodriguezAssociate Professor, KTH Royal Institute of Technology, SwedenVerified email at kth.se
Tingsu ChenVerified email at kth.se
Mohammadreza KolahdouzUniversity of TehranVerified email at ut.ac.ir
Sohrab Redjai SaniPhD from KTH Royal Institute of TechnologyVerified email at kth.se
Majid MohseniDepartment of Physics, Shahid Beheshti UniversityVerified email at sbu.ac.ir
Frank NiklausProfessor of Micro and Nanosystems at KTH Royal Institute of Technology, Stockholm, SwedenVerified email at kth.se
Prof. Pranaba Kishor MuduliProfessor of Physics at Indian Institute of Technology, DelhiVerified email at physics.iitd.ac.in
Philipp DürrenfeldAdvanced Energy IndustriesVerified email at aei.com
Randy K. DumasQuantum Design Inc.Verified email at qdusa.com
Lyubov BelovaProfessor, Royal Institute of TechnologyVerified email at kth.se
Kristinn B. GylfasonProfessor, Micro and Nanosystems, KTH Royal Institute of TechnologyVerified email at kth.se
Ted JohanssonDocent, Associate Professor, Solid-State Electronics, Dept. of EE, Uppsala UniversityVerified email at angstrom.uu.se

B. Gunnar Malm

Professor in Integrated Devices and Circuits, KTH Royal Institute of Technology

Verified email at kth.se - Homepage

Semiconductor and Spintronic Device Physics Extreme Environment Electronics


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Spin-torque and spin-Hall nano-oscillators T Chen, RK Dumas, A Eklund, PK Muduli, A Houshang, AA Awad, ... Proceedings of the IEEE 104 (10), 1919-1945, 2016	400	2016
The VLSI handbook WK Chen CRC press, 1999	302	1999
Mutually synchronized bottom-up multi-nanocontact spin–torque oscillators S Sani, J Persson, SM Mohseni, Y Pogoryelov, PK Muduli, A Eklund, ... Nature communications 4 (1), 2731, 2013	145	2013
500Bipolar Integrated OR/NOR Gate in 4H-SiC L Lanni, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 34 (9), 1091-1093, 2013	111	2013
A monolithic, 500 C operational amplifier in 4H-SiC bipolar technology R Hedayati, L Lanni, S Rodriguez, BG Malm, A Rusu, CM Zetterling IEEE Electron Device Letters 35 (7), 693-695, 2014	90	2014
High-voltage 4H-SiC PiN diodes with etched junction termination extension R Ghandi, B Buono, M Domeij, G Malm, CM Zetterling, M Ostling IEEE Electron Device Letters 30 (11), 1170-1172, 2009	82	2009
Modeling and characterization of current gain versus temperature in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 57 (3), 704-711, 2010	76	2010
Direct observation and imaging of a spin-wave soliton with p-like symmetry S Bonetti, R Kukreja, Z Chen, F Macià, JM Hernàndez, A Eklund, ... Nature communications 6 (1), 8889, 2015	74	2015
Design and characterization of high-temperature ECL-based bipolar integrated circuits in 4H-SiC L Lanni, R Ghandi, BG Malm, CM Zetterling, M Ostling IEEE Transactions on Electron Devices 59 (4), 1076-1083, 2012	67	2012
Comprehensive study on low-frequency noise and mobility in Si and SiGe pMOSFETs with high-/spl kappa/gate dielectrics and TiN gate M von Haartman, BG Malm, M Ostling IEEE transactions on electron devices 53 (4), 836-843, 2006	52	2006
1/f noise in Si and si/sub 0.7/Ge/sub 0.3/pMOSFETs M von Haartman, AC Lindgren, PE Hellstrom, BG Malm, SL Zhang, ... IEEE Transactions on Electron Devices 50 (12), 2513-2519, 2003	48	2003
SB-MOSFETs in UTB-SOI featuring PtSi source/drain with dopant segregation Z Zhang, Z Qiu, PE Hellstrom, G Malm, J Olsson, J Lu, M Ostling, ... IEEE electron device letters 29 (1), 125-127, 2007	46	2007
Lateral encroachment of Ni-silicides in the source/drain regions on ultrathin silicon-on-insulator J Seger, PE Hellström, J Lu, BG Malm, M von Haartman, M Östling, ... Applied Physics Letters 86 (25), 2005	46	2005
Bipolar integrated circuits in SiC for extreme environment operation CM Zetterling, A Hallén, R Hedayati, S Kargarrazi, L Lanni, BG Malm, ... Semiconductor Science and Technology 32 (3), 034002, 2017	44	2017
A robust spacer gate process for deca-nanometer high-frequency MOSFETs J Hållstedt, PE Hellström, Z Zhang, BG Malm, J Edholm, J Lu, SL Zhang, ... Microelectronic Engineering 83 (3), 434-439, 2006	40	2006
Dependence of the colored frequency noise in spin torque oscillators on current and magnetic field A Eklund, S Bonetti, SR Sani, S Majid Mohseni, J Persson, S Chung, ... Applied Physics Letters 104 (9), 2014	39	2014
3D Free‐Form Patterning of Silicon by Ion Implantation, Silicon Deposition, and Selective Silicon Etching AC Fischer, LM Belova, YGM Rikers, BG Malm, HH Radamson, ... Advanced Functional Materials 22 (19), 4004-4008, 2012	39	2012
Influence of emitter width and emitter–base distance on the current gain in 4H-SiC power BJTs B Buono, R Ghandi, M Domeij, BG Malm, CM Zetterling, M Östling IEEE transactions on electron devices 57 (10), 2664-2670, 2010	36	2010
A low-complexity 62-GHz fT SiGe heterojunction bipolar transistor process using differential epitaxy and in situ phosphorus-doped poly-Si emitter at very low thermal budget JV Grahn, H Fosshaug, M Jargelius, P Jönsson, M Linder, BG Malm, ... Solid-State Electronics 44 (3), 549-554, 2000	36	2000
A 600° C TTL-based 11-stage ring oscillator in bipolar silicon carbide technology M Shakir, S Hou, BG Malm, M Östling, CM Zetterling IEEE Electron Device Letters 39 (10), 1540-1543, 2018	35	2018

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