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Alexey Kovsh
Alexey Kovsh
Alfalume, Inc
Verified email at alfalume.com - Homepage
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Cited by
Year
InAs/InGaAs quantum dot structures on GaAs substrates emitting at 1.3 μm
VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, AY Egorov, AV Lunev, ...
Applied physics letters 74 (19), 2815-2817, 1999
5131999
InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 µm
JA Lott, NN Ledentsov, VM Ustinov, NA Maleev, AE Zhukov, AR Kovsh, ...
Electronics Letters 36 (16), 1384-1385, 2000
3442000
The role of Auger recombination in the temperature-dependent output characteristics of -doped 1.3 μm quantum dot lasers
S Fathpour, Z Mi, P Bhattacharya, AR Kovsh, SS Mikhrin, IL Krestnikov, ...
Applied Physics Letters 85 (22), 5164-5166, 2004
3072004
Quantum dot lasers: breakthrough in optoelectronics
D Bimberg, M Grundmann, F Heinrichsdorff, NN Ledentsov, VM Ustinov, ...
Thin solid films 367 (1-2), 235-249, 2000
2882000
Tuning quantum dot properties by activated phase separation of an InGa (Al) As alloy grown on InAs stressors
MV Maximov, AF Tsatsul’nikov, BV Volovik, DS Sizov, YM Shernyakov, ...
Physical Review B 62 (24), 16671, 2000
2562000
High performance quantum dot lasers on GaAs substrates operating in 1.5 µm range
NN Ledentsov, AR Kovsh, AE Zhukov, NA Maleev, SS Mikhrin, ...
Electronics Letters 39 (15), 1126-1128, 2003
2132003
InAs/InGaAs/GaAs quantum dot lasers of 1.3 µm range with high (88%) differential efficiency
AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil'Ev, ...
Electronics Letters 38 (19), 1, 2002
1942002
High power temperature-insensitive 1.3 µm InAs/InGaAs/GaAs quantum dot lasers
SS Mikhrin, AR Kovsh, IL Krestnikov, AV Kozhukhov, DA Livshits, ...
Semiconductor science and technology 20 (5), 340, 2005
1912005
High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser
EU Rafailov, MA Cataluna, W Sibbett, ND Il’Inskaya, YM Zadiranov, ...
Applied Physics Letters 87 (8), 081107, 2005
1842005
AlGaAs/GaAs photovoltaic cells with an array of InGaAs QDs
SA Blokhin, AV Sakharov, AM Nadtochy, AS Pauysov, MV Maximov, ...
Semiconductors 43, 514-518, 2009
1782009
Strain engineering of self-organized InAs quantum dots
F Guffarth, R Heitz, A Schliwa, O Stier, NN Ledentsov, AR Kovsh, ...
Physical Review B 64 (8), 085305, 2001
1752001
1.3 µm GaAs-based laser using quantum dots obtained by activated spinodal decomposition
YM Shernyakov, DA Bedarev, EY Kondrat'eva, PS Kop'ev, AR Kovsh, ...
Electronics Letters 35 (11), 898-900, 1999
1721999
Hole and electron emission from InAs quantum dots
CMA Kapteyn, M Lion, R Heitz, D Bimberg, PN Brunkov, BV Volovik, ...
Applied Physics Letters 76 (12), 1573-1575, 2000
1592000
Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate
AE Zhukov, AR Kovsh, VM Ustinov, YM Shernyakov, SS Mikhrin, ...
IEEE Photonics Technology Letters 11 (11), 1345-1347, 1999
1561999
Long-wavelength lasing from multiply stacked InAs/InGaAs quantum dots on GaAs substrates
AE Zhukov, AR Kovsh, NA Maleev, SS Mikhrin, VM Ustinov, ...
Applied physics letters 75 (13), 1926-1928, 1999
1561999
InAs/InGaAs/GaAs quantum dot lasers of 1.3 μm range with enhanced optical gain
AR Kovsh, NA Maleev, AE Zhukov, SS Mikhrin, AP Vasil’ev, ...
Journal of Crystal Growth 251 (1-4), 729-736, 2003
1532003
35GHz mode-locking of 1.3 μm quantum dot lasers
M Kuntz, G Fiol, M Lämmlin, D Bimberg, MG Thompson, KT Tan, ...
Applied Physics Letters 85 (5), 843-845, 2004
1482004
Quantum dot laser with 75nm broad spectrum of emission
A Kovsh, I Krestnikov, D Livshits, S Mikhrin, J Weimert, A Zhukov
Optics letters 32 (7), 793-795, 2007
1442007
Feedback sensitivity of 1.3 lm InAs/GaAs quantum dot lasers
D O’Brien, SP Hegarty, G Huyet, JG McInerney, T Kettler, M Laemmlin, ...
RIN 140, 150, 2003
1352003
Electronic structure of self-assembled InAs quantum dots in GaAs matrix
PN Brounkov, A Polimeni, ST Stoddart, M Henini, L Eaves, PC Main, ...
Applied physics letters 73 (8), 1092-1094, 1998
1251998
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