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Darwin G Enicks
Darwin G Enicks
Other namesD Enicks, Darwin Gene Enicks, DG Enicks
Atomica
Verified email at atomica.com
Title
Cited by
Cited by
Year
Method of cleaning glass substrates
DG Enicks, Y Nakamura, S Venkatachalam, WJ Walczak, L Wang
US Patent 9,561,982, 2017
1392017
Glass articles and methods for controlled bonding of glass sheets with carriers
RA Bellman, DC Bookbinder, RG Manley, P Mazumder, T Chang, ...
US Patent 10,086,584, 2018
432018
Hetrojunction bipolar transistor (hbt) with periodic multilayer base
DG Enicks, A Corporation
US Patent App. 11/467,480, 2006
402006
Carrier-bonding methods and articles for semiconductor and interposer processing
DG Enicks, JT Keech, AB Shorey, WP Thomas III
US Patent 10,510,576, 2019
342019
Methods for processing electronic devices
RA Bellman, DC Bookbinder, RG Manley, P Mazumder, T Chang, ...
US Patent 10,014,177, 2018
332018
Articles with anti-reflective high-hardness coatings and related methods
CA Paulson, DG Enicks, JF Oudard, JJ Price, J Wang
US Patent 9,703,010, 2017
292017
Boron etch-stop layer and methods related thereto
DG Enicks
US Patent 7,569,913, 2009
192009
Strain-compensated metastable compound base heterojunction bipolar transistor
D Enicks, J Chaffee, D Carver, E Darwin G, C John T, C Darnian A
US Patent App. 11/268,154, 2005
192005
A method for manipulation of oxygen within semiconductor materials
D Enicks
US Patent App. 11/421,161, 2007
182007
Method for growth and optimization of heterojunction bipolar transistor film stacks by remote injection
D Enicks, D Carver, E Darwin G, C Damian A
US Patent App. 11/166,287, 2005
182005
Method for providing a nanoscale, high electron mobility transistor (HEMT) on insulator
DG Enicks
US Patent 7,550,758, 2009
172009
System and method for providing a nanoscale, highly selective, and thermally resilient silicon, germanium, or silicon-germanium etch-stop
D Enicks
US Patent App. 11/554,430, 2007
152007
Integrated circuit structures having a boron-and carbon-doped etch-stop and methods, devices and systems related thereto
DG Enicks
US Patent 7,495,250, 2009
142009
Oxygen enhanced metastable silicon germanium film layer
DG Enicks, JT Chaffee, DA Carver
US Patent App. 11/318,797, 2007
132007
Vapor deposition systems and processes for the protection of glass sheets
RA Boudreau, DG Enicks, CA Paulson, GR Trott
US Patent 10,106,457, 2018
112018
A study of process-induced oxygen updiffusion in pseudomorphic boron-doped sub-50 nm SiGeC layers grown by LPCVD
D Enicks, G Oleszek
Electrochemical and Solid-State Letters 8 (10), G286, 2005
112005
Gettering layer on substrate
D Enicks, M Good, J Chaffee
US Patent App. 12/020,930, 2009
102009
Bandgap and recombination engineered emitter layers for SiGe HBT performance optimization
DG Enicks, D Carver
US Patent 7,651,919, 2010
92010
Integrated circuit structures having a boron etch-stop layer and methods, devices and systems related thereto
DG Enicks
US Patent App. 12/114,571, 2008
92008
Electronic device with dopant diffusion barrier and tunable work function and methods of making same
DG Enicks
US Patent 7,612,421, 2009
82009
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