| A fluorescence resonance energy transfer-derived structure of a quantum dot-protein bioconjugate nanoassembly IL Medintz, JH Konnert, AR Clapp, I Stanish, ME Twigg, H Mattoussi, ... Proceedings of the National Academy of Sciences 101 (26), 9612-9617, 2004 | 330 | 2004 |
| Influence of MOVPE growth conditions on carbon and silicon concentrations in GaN DD Koleske, AE Wickenden, RL Henry, ME Twigg Journal of crystal growth 242 (1-2), 55-69, 2002 | 218 | 2002 |
| GaN decomposition in H2 and N2 at MOVPE temperatures and pressures DD Koleske, AE Wickenden, RL Henry, JC Culbertson, ME Twigg Journal of crystal growth 223 (4), 466-483, 2001 | 209 | 2001 |
| Thiol-terminated di-, tri-, and tetraethylene oxide functionalized gold nanoparticles: a water-soluble, charge-neutral cluster EE Foos, AW Snow, ME Twigg, MG Ancona Chemistry of Materials 14 (5), 2401-2408, 2002 | 162 | 2002 |
| Resistivity control in unintentionally doped GaN films grown by MOCVD AE Wickenden, DD Koleske, RL Henry, ME Twigg, M Fatemi Journal of crystal growth 260 (1-2), 54-62, 2004 | 112 | 2004 |
| Compliant substrates: a comparative study of the relaxation mechanisms of strained films bonded to high and low viscosity oxides KD Hobart, FJ Kub, M Fatemi, ME Twigg, PE Thompson, TS Kuan, ... Journal of Electronic Materials 29 (7), 897-900, 2000 | 104 | 2000 |
| Enhanced GaN decomposition in near atmospheric pressures DD Koleske, AE Wickenden, RL Henry, ME Twigg, JC Culbertson, ... Applied physics letters 73 (14), 2018-2020, 1998 | 89 | 1998 |
| Technique for perfecting the active regions of wide bandgap semiconductor nitride devices M Peckerar, R Henry, D Koleske, A Wickenden, CR Eddy Jr, R Holm, ... US Patent 7,198,970, 2007 | 73 | 2007 |
| Structure of stacking faults formed during the forward bias of diodes ME Twigg, RE Stahlbush, M Fatemi, SD Arthur, JB Fedison, JB Tucker, ... Applied physics letters 82 (15), 2410-2412, 2003 | 68 | 2003 |
| Lattice walks by long jumps JD Wrigley, ME Twigg, G Ehrlich The Journal of Chemical Physics 93 (4), 2885-2902, 1990 | 67 | 1990 |
| Surface segregation and structure of Sb-doped Si (100) films grown at low temperature by molecular beam epitaxy KD Hobart, DJ Godbey, ME Twigg, M Fatemi, PE Thompson, DS Simons Surface Science 334 (1-3), 29-38, 1995 | 65 | 1995 |
| Defect mechanisms in degradation of 1.3-μm wavelength channeled-substrate buried heterostructure lasers SNG Chu, S Nakahara, ME Twigg, LA Koszi, EJ Flynn, AK Chin, ... Journal of applied physics 63 (3), 611-623, 1988 | 63 | 1988 |
| The influence of OMVPE growth pressure on the morphology, compensation, and doping of GaN and related alloys AE Wickenden, DD Koleske, RL Henry, RJ Gorman, ME Twigg, M Fatemi, ... Journal of Electronic Materials 29 (1), 21-26, 2000 | 62 | 2000 |
| Low‐temperature cleaning processes for Si molecular beam epitaxy PE Thompson, ME Twigg, DJ Godbey, KD Hobart, DS Simons Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993 | 61 | 1993 |
| Growth of high quality, epitaxial InSb nanowires HD Park, SM Prokes, ME Twigg, Y Ding, ZL Wang Journal of crystal growth 304 (2), 399-401, 2007 | 57 | 2007 |
| Ohmic contacts in AlSb/InAs high electron mobility transistors for low-voltage operation JB Boos, BR Bennett, W Kruppa, D Park, J Mittereder, R Bass, ME Twigg Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1999 | 55 | 1999 |
| Electron channeling contrast imaging of atomic steps and threading dislocations in YN Picard, ME Twigg, JD Caldwell, CR Eddy Jr, PG Neudeck, AJ Trunek, ... Applied physics letters 90 (23), 234101, 2007 | 53 | 2007 |
| Influence of AlN nucleation layer temperature on GaN electronic properties grown on SiC DD Koleske, RL Henry, ME Twigg, JC Culbertson, SC Binari, ... Applied physics letters 80 (23), 4372-4374, 2002 | 52 | 2002 |
| Evolution of GaSb epitaxy on GaAs(001)‐c(4×4) PM Thibado, BR Bennett, ME Twigg, BV Shanabrook, LJ Whitman Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 14 (3 …, 1996 | 52 | 1996 |
| Increasing efficiency of photoelectronic conversion by encapsulation of photosynthetic reaction center proteins in arrayed carbon nanotube electrode N Lebedev, SA Trammell, S Tsoi, A Spano, JH Kim, J Xu, ME Twigg, ... Langmuir 24 (16), 8871-8876, 2008 | 51 | 2008 |
