Follow
Akio Ohta
Akio Ohta
Fukuoka University
No verified email
Title
Cited by
Cited by
Year
Germanene epitaxial growth by segregation through Ag (111) thin films on Ge (111)
J Yuhara, H Shimazu, K Ito, A Ohta, M Araidai, M Kurosawa, M Nakatake, ...
ACS nano 12 (11), 11632-11637, 2018
1172018
Effects of fructooligosaccharides and other saccharides on Ca, Mg and P absorption in rats.
A Ohta, N Osakabe, K Yamada, Y Saito, H Hidaka
881993
Native oxidation growth on Ge (111) and (100) surfaces
SK Sahari, H Murakami, T Fujioka, T Bando, A Ohta, K Makihara, ...
Japanese Journal of Applied Physics 50 (4S), 04DA12, 2011
742011
Evaluation of valence band top and electron affinity of SiO2 and Si-based semiconductors using X-ray photoelectron spectroscopy
N Fujimura, A Ohta, K Makihara, S Miyazaki
Japanese Journal of Applied Physics 55 (8S2), 08PC06, 2016
572016
Bonding and Electron Energy-Level Alignment at Metal/TiO2 Interfaces: A Density Functional Theory Study
H Chen, P Li, N Umezawa, H Abe, J Ye, K Shiraishi, A Ohta, S Miyazaki
The Journal of Physical Chemistry C 120 (10), 5549-5556, 2016
502016
Photoelectron spectroscopy of ultrathin yttrium oxide films on Si (1 0 0)
A Ohta, M Yamaoka, S Miyazaki
Microelectronic engineering 72 (1-4), 154-159, 2004
482004
Surface-segregated Si and Ge ultrathin films formed by Ag-induced layer exchange process
M Kurosawa, A Ohta, M Araidai, S Zaima
Japanese Journal of Applied Physics 55 (8S1), 08NB07, 2016
342016
Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors
FA Noor, M Abdullah, S Sukirno, K Khairurrijal, A Ohta, S Miyazaki
Journal of Applied Physics 108 (9), 2010
342010
Characterization of chemical bonding features at metal/GeO2 Interfaces by X-ray photoelectron spectroscopy
M Matsui, H Murakami, T Fujioka, A Ohta, S Higashi, S Miyazaki
Microelectronic engineering 88 (7), 1549-1552, 2011
282011
Universal theory of workfunctions at metal/Hf-based high-k dielectrics interfaces-guiding principles for gate metal selection
K Shiraishi, Y Akasaka, S Miyazaki, T Nakayama, T Nakaoka, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 39-42, 2005
262005
Continuous growth of germanene and stanene lateral heterostructures
T Ogikubo, H Shimazu, Y Fujii, K Ito, A Ohta, M Araidai, M Kurosawa, ...
Advanced Materials Interfaces 7 (10), 1902132, 2020
252020
X-ray photoelectron spectroscopy study of interfacial reactions between metal and ultrathin Ge oxide
A Ohta, T Fujioka, H Murakami, S Higashi, S Miyazaki
Japanese Journal of Applied Physics 50 (10S), 10PE01, 2011
252011
Activation mechanism of TiOx passivating layer on crystalline Si
T Mochizuki, K Gotoh, A Ohta, S Ogura, Y Kurokawa, S Miyazaki, ...
Applied Physics Express 11 (10), 102301, 2018
232018
Kinetics of thermally oxidation of Ge (100) surface
SK Sahari, A Ohta, M Matsui, K Mishima, H Murakami, S Higashi, ...
Journal of Physics: Conference Series 417 (1), 012014, 2013
222013
High thermal stability of abrupt SiO2/GaN interface with low interface state density
NX Truyen, N Taoka, A Ohta, K Makihara, H Yamada, T Takahashi, ...
Japanese Journal of Applied Physics 57 (4S), 04FG11, 2018
212018
Physics of metal/high-k interfaces
T Nakayama, K Shiraishi, S Miyazaki, Y Akasaka, K Torii, P Ahmet, ...
ECS transactions 3 (3), 129, 2006
212006
Total photoelectron yield spectroscopy of energy distribution of electronic states density at GaN surface and SiO2/GaN interface
A Ohta, NX Truyen, N Fujimura, M Ikeda, K Makihara, S Miyazaki
Japanese Journal of Applied Physics 57 (6S3), 06KA08, 2018
202018
Characterization of interfaces between chemically cleaned or thermally oxidized germanium and metals
H Murakami, T Fujioka, A Ohta, T Bando, S Higashi, S Miyazaki
ECS Transactions 33 (6), 253, 2010
202010
Electroluminescence of superatom-like Ge-core/Si-shell quantum dots by alternate field-effect-induced carrier injection
K Makihara, M Ikeda, N Fujimura, K Yamada, A Ohta, S Miyazaki
Applied Physics Express 11 (1), 011305, 2017
172017
Photoemission study of ultrathin GeO2/Ge heterostructures formed by UV-O3 oxidation
A Ohta, H Nakagawa, H Murakami, S Higashi, S Miyazaki
e-Journal of Surface Science and Nanotechnology 4, 174-179, 2006
172006
The system can't perform the operation now. Try again later.
Articles 1–20