Axel Hoffmann

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Bruno K MeyerJustus Liebig University GiessenVerified email at mailbox.tu-berlin.de
juergen christenProfessor of Physics, Magdeburg UniversityVerified email at ovgu.de
Christian ThomsenTU BerlinVerified email at tu-berlin.de
Markus R. WagnerPaul-Drude-Institut für FestkörperelektronikVerified email at pdi-berlin.de
Gordon CallsenUniversity of Bremen, Institute of Solid State PhysicsVerified email at ifp.uni-bremen.de
Nikolay LedentsovVI Systems GmbHVerified email at v-i-systems.com
Ronny KirsteResearch associate, NCSUVerified email at ncsu.edu
Matthew R. PhillipsEmeritus Professor of Applied Physics, University of Technology SydneyVerified email at uts.edu.au
Sebastian ReparazINSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONAVerified email at icmab.es
Christian NenstielTechnische Universität BerlinVerified email at physik.tu-berlin.de
Sergey MaksimenkoBelarusian State University, Research Institute for Nuclear Problems, DirectorVerified email at bsu.by
Dagmar GerthsenKITVerified email at kit.edu
Kazumasa HiramatsuMie University, Emeritus ProfessoreVerified email at elec.mie-u.ac.jp
Zlatko SitarKobe Steel Distinguished Professor of Materials Science and Engineerign, North Carolina StateVerified email at ncsu.edu
Wolfgang GehlhoffProf. Dr., Technische Universität BerlinVerified email at sol.physik.tu-berlin.de
Dietz NikolausGeorgia State UniversityVerified email at gsu.edu
Anna RodinaChief Scientist, Ioffe InstituteVerified email at mail.ioffe.ru
Andrei SchliwaPrincipal Scientist @ Technische Universität BerlinVerified email at tu-berlin.de
Hiroshi AMANO (天野　浩)Nagoya University (名古屋大学)Verified email at nuee.nagoya-u.ac.jp
Ramon CollazoProfessor of Materials Science and Engineering, NCSUVerified email at ncsu.edu

Axel Hoffmann

Institute of Solid State Physics, Technical University of Berlin

Verified email at tu-berlin.de - Homepage

Semiconductor physics Nanostructures Devices


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Bound exciton and donor–acceptor pair recombinations in ZnO BK Meyer, H Alves, DM Hofmann, W Kriegseis, D Forster, F Bertram, ... physica status solidi (b) 241 (2), 231-260, 2004	2000	2004
Zinc Oxide: From Fundamental Properties Towards Novel Applications CF Klingshirn, BK Meyer, A Waag, A Hoffmann, J Geurts Springer, 2010	771	2010
Energy relaxation by multiphonon processes in InAs/GaAs quantum dots R Heitz, M Veit, NN Ledentsov, A Hoffmann, D Bimberg, VM Ustinov, ... Physical Review B 56 (16), 10435, 1997	634	1997
Group III nitride semiconductor compounds: physics and applications Clarendon Press, 1998	566*	1998
Nitrogen-related local vibrational modes in ZnO: N A Kaschner, U Haboeck, M Strassburg, M Strassburg, G Kaczmarczyk, ... Applied Physics Letters 80 (11), 1909-1911, 2002	554	2002
Behind the weak excitonic emission of ZnO quantum dots: ZnO/Zn (OH) 2 core-shell structure H Zhou, H Alves, DM Hofmann, W Kriegseis, BK Meyer, G Kaczmarczyk, ... Applied physics letters 80 (2), 210-212, 2002	393	2002
Zone-boundary phonons in hexagonal and cubic GaN H Siegle, G Kaczmarczyk, L Filippidis, AP Litvinchuk, A Hoffmann, ... Physical Review B 55 (11), 7000, 1997	392	1997
Properties of the yellow luminescence in undoped GaN epitaxial layers DM Hofmann, D Kovalev, G Steude, BK Meyer, A Hoffmann, L Eckey, ... Phys. Rev. B 72 (23), 16702, 1995	324	1995
Excited states and energy relaxation in stacked InAs/GaAs quantum dots R Heitz, A Kalburge, Q Xie, M Grundmann, P Chen, A Hoffmann, ... Physical Review B 57 (15), 9050, 1998	321	1998
Development of advanced high heat flux and plasma-facing materials C Linsmeier, M Rieth, J Aktaa, T Chikada, A Hoffmann, J Hoffmann, ... Nuclear Fusion 57 (9), 092007, 2017	319	2017
Exciton fine structure in undoped GaN epitaxial films D Volm, K Oettinger, T Streibl, D Kovalev, M Ben-Chorin, J Diener, ... Physical Review B 53 (24), 16543, 1996	247	1996
Bound excitons in ZnO: Structural defect complexes versus shallow impurity centers MR Wagner, G Callsen, JS Reparaz, JH Schulze, R Kirste, M Cobet, ... Physical Review B—Condensed Matter and Materials Physics 84 (3), 035313, 2011	246	2011
Semiconductor nanostructures D Bimberg Springer, 2008	236	2008
High Si and Ge n-type doping of GaN doping-Limits and impact on stress S Fritze, A Dadgar, H Witte, M Bügler, A Rohrbeck, J Bläsing, A Hoffmann, ... Applied Physics Letters 100 (12), 2012	234	2012
Free excitons in wurtzite GaN AV Rodina, M Dietrich, A Göldner, L Eckey, A Hoffmann, AL Efros, ... Physical Review B 64 (11), 115204, 2001	219	2001
Existence of a phonon bottleneck for excitons in quantum dots R Heitz, H Born, F Guffarth, O Stier, A Schliwa, A Hoffmann, D Bimberg Physical review b 64 (24), 241305, 2001	213	2001
Interrelation of structural and electronic properties in quantum dots using an eight-band model M Winkelnkemper, A Schliwa, D Bimberg Physical Review B—Condensed Matter and Materials Physics 74 (15), 155322, 2006	202	2006
Quantitative determination of hexagonal minority phase in cubic GaN using Raman spectroscopy H Siegle, L Eckey, A Hoffmann, C Thomsen, BK Meyer, D Schikora, ... Solid State Communications 96 (12), 943-949, 1995	198	1995
Gain studies of (Cd, Zn) Se quantum islands in a ZnSe matrix M Strassburg, V Kutzer, UW Pohl, A Hoffmann, I Broser, NN Ledentsov, ... Applied physics letters 72 (8), 942-944, 1998	197	1998
Optical properties of the nitrogen acceptor in epitaxial ZnO A Zeuner, H Alves, DM Hofmann, BK Meyer, A Hoffmann, U Haboeck, ... physica status solidi (b) 234 (3), R7-R9, 2002	196	2002

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