Pedro Castrillo
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Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures
N Carlsson, W Seifert, A Petersson, P Castrillo, ME Pistol, L Samuelson
Applied physics letters 65 (24), 3093-3095, 1994
Carbon in silicon: Modeling of diffusion and clustering mechanisms
R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ...
Journal of Applied Physics 92 (3), 1582-1587, 2002
Excited states of individual quantum dots studied by photoluminescence spectroscopy
D Hessman, P Castrillo, ME Pistol, C Pryor, L Samuelson
Applied physics letters 69 (6), 749-751, 1996
Random telegraph noise in photoluminescence from individual self-assembled quantum dots
ME Pistol, P Castrillo, D Hessman, JA Prieto, L Samuelson
Physical Review B 59 (16), 10725, 1999
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial
LA Marqués, L Pelaz, P Castrillo, J Barbolla
Physical Review B 71 (8), 085204, 2005
Band filling at low optical power density in semiconductor dots
P Castrillo, D Hessman, ME Pistol, S Anand, N Carlsson, W Seifert, ...
Applied physics letters 67 (13), 1905-1907, 1995
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla
Physical Review B 72 (3), 035202, 2005
Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla
Applied Physics Letters 86 (25), 2005
Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation
P Castrillo, R Pinacho, M Jaraiz, JE Rubio
Journal of Applied Physics 109 (10), 2011
Comprehensive model of damage accumulation in silicon
KRC Mok, F Benistant, M Jaraiz, JE Rubio, P Castrillo, R Pinacho, ...
Journal of Applied Physics 103 (1), 2008
Photoluminescence polarization of single InP quantum dots
V Zwiller, L Jarlskog, ME Pistol, C Pryor, P Castrillo, W Seifert, ...
Physical Review B 63 (23), 233301, 2001
Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
I Martin-Bragado, S Tian, M Johnson, P Castrillo, R Pinacho, J Rubio, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006
Optical studies of GaAs quantum wells strained to GaP
JA Prieto, G Armelles, ME Pistol, P Castrillo, JP Silveira, F Briones
Applied physics letters 70 (25), 3449-3451, 1997
Nano-optical studies of individual nanostructures
LSL Samuelson, NCN Carlsson, PCP Castrillo, AGA Gustafsson, ...
Japanese journal of applied physics 34 (8S), 4392, 1995
Lattice dynamics and Raman response of (113) GaAs/AlAs superlattices
P Castrillo, L Colombo, G Armelles
Physical Review B 49 (15), 10362, 1994
Optical anisotropy of (113)-oriented GaAs/AlAs superlattices
G Armelles, P Castrillo, PS Dominguez, L Gonzalez, A Ruiz, ...
Physical Review B 49 (19), 14020, 1994
Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena
I Martin-Bragado, M Jaraiz, P Castrillo, R Pinacho, J Barbolla, ...
Physical Review B 68 (19), 195204, 2003
Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
KRC Mok, M Jaraiz, I Martin-Bragado, JE Rubio, P Castrillo, R Pinacho, ...
Journal of applied physics 98 (4), 2005
From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
I Martin-Bragado, I Avci, N Zographos, M Jaraiz, P Castrillo
Solid-state electronics 52 (9), 1430-1436, 2008
Phonon properties and Raman response of (113) GaAs/AlAs corrugated superlattices
P Castrillo, G Armelles, L Gonzalez, PS Domínguez, L Colombo
Physical Review B 51 (3), 1647, 1995
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