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Pedro Castrillo
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Study of the two‐dimensional–three‐dimensional growth mode transition in metalorganic vapor phase epitaxy of GaInP/InP quantum‐sized structures
N Carlsson, W Seifert, A Petersson, P Castrillo, ME Pistol, L Samuelson
Applied physics letters 65 (24), 3093-3095, 1994
2411994
Carbon in silicon: Modeling of diffusion and clustering mechanisms
R Pinacho, P Castrillo, M Jaraiz, I Martin-Bragado, J Barbolla, ...
Journal of Applied Physics 92 (3), 1582-1587, 2002
2092002
Excited states of individual quantum dots studied by photoluminescence spectroscopy
D Hessman, P Castrillo, ME Pistol, C Pryor, L Samuelson
Applied physics letters 69 (6), 749-751, 1996
1581996
Random telegraph noise in photoluminescence from individual self-assembled quantum dots
ME Pistol, P Castrillo, D Hessman, JA Prieto, L Samuelson
Physical Review B 59 (16), 10725, 1999
1371999
Molecular dynamics study of the configurational and energetic properties of the silicon self-interstitial
LA Marqués, L Pelaz, P Castrillo, J Barbolla
Physical Review B 71 (8), 085204, 2005
892005
Band filling at low optical power density in semiconductor dots
P Castrillo, D Hessman, ME Pistol, S Anand, N Carlsson, W Seifert, ...
Applied physics letters 67 (13), 1905-1907, 1995
721995
Physical atomistic kinetic Monte Carlo modeling of Fermi-level effects of species diffusing in silicon
I Martin-Bragado, P Castrillo, M Jaraiz, R Pinacho, JE Rubio, J Barbolla
Physical Review B 72 (3), 035202, 2005
432005
Modeling arsenic deactivation through arsenic-vacancy clusters using an atomistic kinetic Monte Carlo approach
R Pinacho, M Jaraiz, P Castrillo, I Martin-Bragado, JE Rubio, J Barbolla
Applied Physics Letters 86 (25), 2005
432005
Physical modeling and implementation scheme of native defect diffusion and interdiffusion in SiGe heterostructures for atomistic process simulation
P Castrillo, R Pinacho, M Jaraiz, JE Rubio
Journal of Applied Physics 109 (10), 2011
362011
Comprehensive model of damage accumulation in silicon
KRC Mok, F Benistant, M Jaraiz, JE Rubio, P Castrillo, R Pinacho, ...
Journal of Applied Physics 103 (1), 2008
332008
Photoluminescence polarization of single InP quantum dots
V Zwiller, L Jarlskog, ME Pistol, C Pryor, P Castrillo, W Seifert, ...
Physical Review B 63 (23), 233301, 2001
302001
Modeling charged defects, dopant diffusion and activation mechanisms for TCAD simulations using kinetic Monte Carlo
I Martin-Bragado, S Tian, M Johnson, P Castrillo, R Pinacho, J Rubio, ...
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2006
292006
Optical studies of GaAs quantum wells strained to GaP
JA Prieto, G Armelles, ME Pistol, P Castrillo, JP Silveira, F Briones
Applied physics letters 70 (25), 3449-3451, 1997
291997
Nano-optical studies of individual nanostructures
LSL Samuelson, NCN Carlsson, PCP Castrillo, AGA Gustafsson, ...
Japanese journal of applied physics 34 (8S), 4392, 1995
29*1995
Lattice dynamics and Raman response of (113) GaAs/AlAs superlattices
P Castrillo, L Colombo, G Armelles
Physical Review B 49 (15), 10362, 1994
291994
Optical anisotropy of (113)-oriented GaAs/AlAs superlattices
G Armelles, P Castrillo, PS Dominguez, L Gonzalez, A Ruiz, ...
Physical Review B 49 (19), 14020, 1994
281994
Mobile silicon di-interstitial: Surface, self-interstitial clustering, and transient enhanced diffusion phenomena
I Martin-Bragado, M Jaraiz, P Castrillo, R Pinacho, J Barbolla, ...
Physical Review B 68 (19), 195204, 2003
272003
Ion-beam amorphization of semiconductors: A physical model based on the amorphous pocket population
KRC Mok, M Jaraiz, I Martin-Bragado, JE Rubio, P Castrillo, R Pinacho, ...
Journal of applied physics 98 (4), 2005
242005
From point defects to dislocation loops: A comprehensive modelling framework for self-interstitial defects in silicon
I Martin-Bragado, I Avci, N Zographos, M Jaraiz, P Castrillo
Solid-state electronics 52 (9), 1430-1436, 2008
232008
Phonon properties and Raman response of (113) GaAs/AlAs corrugated superlattices
P Castrillo, G Armelles, L Gonzalez, PS Domínguez, L Colombo
Physical Review B 51 (3), 1647, 1995
231995
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