Michael E  Ramon
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Impact of deposition and annealing temperature on material and electrical characteristics of ALD HfO2
D Triyoso, R Liu, D Roan, M Ramon, NV Edwards, R Gregory, D Werho, ...
Journal of the Electrochemical Society 151 (10), F220, 2004
CMOS-compatible synthesis of large-area, high-mobility graphene by chemical vapor deposition of acetylene on cobalt thin films
ME Ramon, A Gupta, C Corbet, DA Ferrer, HCP Movva, G Carpenter, ...
ACS nano 5 (9), 7198-7204, 2011
Film properties of ALD and gate dielectrics grown on Si with various pre-deposition treatments
DH Triyoso, RI Hegde, J Grant, P Fejes, R Liu, D Roan, M Ramon, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2004
Impact of titanium addition on film characteristics of HfO2 gate dielectrics deposited by atomic layer deposition
DH Triyoso, RI Hegde, S Zollner, ME Ramon, S Kalpat, R Gregory, ...
Journal of applied physics 98 (5), 2005
Three-gigahertz graphene frequency doubler on quartz operating beyond the transit frequency
ME Ramón, KN Parrish, SF Chowdhury, CW Magnuson, HCP Movva, ...
IEEE Transactions on Nanotechnology 11 (5), 877-883, 2012
HfO2 gate dielectrics deposited via tetrakis diethylamido hafnium
J Schaeffer, NV Edwards, R Liu, D Roan, B Hradsky, R Gregory, J Kulik, ...
Journal of the Electrochemical Society 150 (4), F67, 2003
Defect Passivation With Fluorine and Interface Engineering for Hf-Based High- /Metal Gate Stack Device Reliability and Performance Enhancement
HH Tseng, PJ Tobin, S Kalpat, JK Schaeffer, ME Ramon, LRC Fonseca, ...
IEEE Transactions on Electron Devices 54 (12), 3267-3275, 2007
Physical and electrical characteristics of HfO2 gate dielectrics deposited by ALD and MOCVD
DH Triyoso, M Ramon, RI Hegde, D Roan, R Garcia, J Baker, XD Wang, ...
Journal of the Electrochemical Society 152 (3), G203, 2005
Characteristics of mixed oxides and nanolaminates of atomic layer deposited HfO2–TiO2 gate dielectrics
DH Triyoso, RI Hegde, XD Wang, MW Stoker, R Rai, ME Ramon, ...
Journal of The Electrochemical Society 153 (9), G834, 2006
Improved short channel device characteristics with stress relieved pre-oxide (SRPO) and a novel tantalum carbon alloy metal gate/HfO/sub 2/stack
HH Tseng, CC Capasso, JK Schaeffer, EA Hebert, PJ Tobin, DC Gilmer, ...
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004 …, 2004
Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric
D Shahrjerdi, T Akyol, M Ramon, DI Garcia-Gutierrez, E Tutuc, ...
Applied Physics Letters 92 (20), 2008
BTI characteristics and mechanisms of metal gated HfO/sub 2/films with enhanced interface/bulk process treatments
S Kalpat, HH Tseng, M Ramon, M Moosa, D Tekleab, PJ Tobin, ...
IEEE Transactions on Device and Materials Reliability 5 (1), 26-35, 2005
A compact model for graphene FETs for linear and non-linear circuits
KN Parrish, ME Ramón, SK Banerjee, D Akinwande
Proc. IEEE International Conference on Simulation of Semiconductor Processes …, 2012
Self-aligned graphene field-effect transistors with polyethyleneimine doped source/drain access regions
HCP Movva, ME Ramón, CM Corbet, S Sonde, F Chowdhury, ...
Applied Physics Letters 101 (18), 2012
Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric
D Shahrjerdi, J Nah, B Hekmatshoar, T Akyol, M Ramon, E Tutuc, ...
Applied Physics Letters 97 (21), 2010
Microstructure modified HfO/sub 2/using Zr addition with Ta/sub x/C/sub y/gate for improved device performance and reliability
RI Hegde, DH Triyoso, PJ Tobin, S Kalpat, ME Ramon, HH Tseng, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 35-38, 2005
Performance of super-critical strained-Si directly on insulator (SC-SSOI) CMOS based on high-performance PD-SOI technology
AVY Thean, T White, M Sadaka, L McCormick, M Ramon, R Mora, ...
Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005., 134-135, 2005
ALD HfO~ 2 using Heavy Water (D~ 2O) for Improved MOSFET Stability
HH Tseng, M Ramon, L Hebert, PJ Tobin, D Triyoso, JM Grant, ZX Jiang, ...
Uniaxial-biaxial stress hybridization for super-critical strained-si directly on insulator (SC-SSOI) PMOS with different channel orientations.
AVY Thean, L Prabhu, V Vartanian, M Ramon, BY Nguyen, T White, ...
IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest …, 2005
High-Mobility TaN//Ge(111) n-MOSFETs With RTO-Grown Passivation Layer
M Jamil, J Oh, M Ramon, S Kaur, P Majhi, E Tutuc, SK Banerjee
IEEE electron device letters 31 (11), 1208-1210, 2010
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