Hae Jin Kim
Hae Jin Kim
Department of Electronic Materials, University of Suwon
Verified email at
Cited by
Cited by
Nociceptive memristor
Y Kim, YJ Kwon, DE Kwon, KJ Yoon, JH Yoon, S Yoo, HJ Kim, TH Park, ...
Advanced Materials 30 (8), 1704320, 2018
A ferroelectric photocatalyst for enhancing hydrogen evolution: polarized particulate suspension
S Park, CW Lee, MG Kang, S Kim, HJ Kim, JE Kwon, SY Park, CY Kang, ...
Physical Chemistry Chemical Physics 16 (22), 10408-10413, 2014
Thickness effect of ultra-thin Ta2O5 resistance switching layer in 28 nm-diameter memory cell
TH Park, SJ Song, HJ Kim, SG Kim, S Chung, BY Kim, KJ Lee, KM Kim, ...
Scientific reports 5 (1), 1-9, 2015
Nucleation‐Limited Ferroelectric Orthorhombic Phase Formation in Hf0.5Zr0.5O2 Thin Films
YH Lee, SD Hyun, HJ Kim, JS Kim, C Yoo, T Moon, KD Kim, HW Park, ...
Advanced Electronic Materials 5 (2), 1800436, 2019
Fabrication of a Cu‐cone‐shaped cation source inserted conductive bridge random access memory and its improved switching reliability
HJ Kim, TH Park, KJ Yoon, WM Seong, JW Jeon, YJ Kwon, Y Kim, ...
Advanced Functional Materials 29 (8), 1806278, 2019
Double‐Layer‐Stacked One Diode‐One Resistive Switching Memory Crossbar Array with an Extremely High Rectification Ratio of 109
KJ Yoon, GH Kim, S Yoo, W Bae, JH Yoon, TH Park, DE Kwon, YJ Kwon, ...
Advanced Electronic Materials 3 (7), 1700152, 2017
Sn self-doped α-Fe2O3 nanobranch arrays supported on a transparent, conductive SnO2 trunk to improve photoelectrochemical water oxidation
S Park, HJ Kim, CW Lee, HJ Song, SS Shin, SW Seo, HK Park, S Lee, ...
International journal of hydrogen energy 39 (29), 16459-16467, 2014
Solvothermal synthesis of SnNb2O6 nanoplates and enhanced photocatalytic H2 evolution under visible light
SW Seo, TH Noh, S Park, CW Lee, SH Kim, HJ Kim, HK Park, KS Hong
International journal of hydrogen energy 39 (30), 17517-17523, 2014
Hierarchical assembly of TiO2–SrTiO3 heterostructures on conductive SnO2 backbone nanobelts for enhanced photoelectrochemical and photocatalytic performance
S Park, S Kim, HJ Kim, CW Lee, HJ Song, SW Seo, HK Park, DW Kim, ...
Journal of hazardous materials 275, 10-18, 2014
Uniform Self-rectifying Resistive Switching Behavior via Preformed Conducting Paths in a Vertical-type Ta2O5/HfO2–x Structure with a Sub-μm2 Cell Area
JH Yoon, S Yoo, SJ Song, KJ Yoon, DE Kwon, YJ Kwon, TH Park, HJ Kim, ...
ACS Applied Materials & Interfaces 8 (28), 18215-18221, 2016
A stateful logic family based on a new logic primitive circuit composed of two antiparallel bipolar memristors
N Xu, TG Park, HJ Kim, X Shao, KJ Yoon, TH Park, L Fang, KM Kim, ...
Advanced Intelligent Systems 2 (1), 1900082, 2020
Surface-area-tuned, quantum-dot-sensitized heterostructured nanoarchitectures for highly efficient photoelectrodes
S Park, D Kim, CW Lee, SD Seo, HJ Kim, HS Han, KS Hong, DW Kim
Nano Research 7 (1), 144-153, 2014
Single‐Cell Stateful Logic Using a Dual‐Bit Memristor
KM Kim, N Xu, X Shao, KJ Yoon, HJ Kim, RS Williams, CS Hwang
physica status solidi (RRL)–Rapid Research Letters 13 (3), 1800629, 2019
Filament Shape Dependent Reset Behavior Governed by the Interplay between the Electric Field and Thermal Effects in the Pt/TiO2/Cu Electrochemical …
HJ Kim, KJ Yoon, TH Park, HJ Kim, YJ Kwon, XL Shao, DE Kwon, YM Kim, ...
Advanced Electronic Materials 3 (2), 1600404, 2017
A study of the transition between the non-polar and bipolar resistance switching mechanisms in the TiN/TiO 2/Al memory
XL Shao, KM Kim, KJ Yoon, SJ Song, JH Yoon, HJ Kim, TH Park, ...
Nanoscale 8 (36), 16455-16466, 2016
Defect-Engineered Electroforming-Free Analog HfOx Memristor and Its Application to the Neural Network
GS Kim, H Song, YK Lee, JH Kim, W Kim, TH Park, HJ Kim, K Min Kim, ...
ACS applied materials & interfaces 11 (50), 47063-47072, 2019
Investigation of the retention performance of an ultra-thin HfO2 resistance switching layer in an integrated memory device
GS Kim, TH Park, HJ Kim, TJ Ha, WY Park, SG Kim, CS Hwang
Journal of Applied Physics 124 (2), 024102, 2018
Roles of conducting filament and non-filament regions in the Ta 2 O 5 and HfO 2 resistive switching memory for switching reliability
TH Park, HJ Kim, WY Park, SG Kim, BJ Choi, CS Hwang
Nanoscale 9 (18), 6010-6019, 2017
Thickness‐dependent electroforming behavior of ultra‐thin Ta2O5 resistance switching layer
TH Park, SJ Song, HJ Kim, SG Kim, S Chung, BY Kim, KJ Lee, KM Kim, ...
physica status solidi (RRL)–Rapid Research Letters 9 (6), 362-365, 2015
Interface engineering for improving reliability of resistance switching in Cu/HfO2/TiO2/Pt structure
L Wei Zhou, X Long Shao, X Yuan Li, H Jiang, R Chen, K Jean Yoon, ...
Applied Physics Letters 107 (7), 072901, 2015
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