| Field oxide n-channel mos dosimeters fabricated in cmos processes J Lipovetzky, MA García-Inza, S Carbonetto, MJ Carra, E Redin, ... IEEE Transactions on Nuclear Science 60 (6), 4683-4691, 2013 | 31 | 2013 |
| Zero temperature coefficient bias in MOS devices. Dependence on interface traps density, application to MOS dosimetry SH Carbonetto, MAG Inza, J Lipovetzky, EG Redin, LS Salomone, ... IEEE Transactions on Nuclear Science 58 (6), 3348-3353, 2011 | 27 | 2011 |
| Switched bias differential MOSFET dosimeter M Garcia-Inza, S Carbonetto, J Lipovetzky, MJ Carra, LS Salomone, ... IEEE Transactions on Nuclear Science 61 (3), 1407-1413, 2014 | 22 | 2014 |
| Experimental evidence and modeling of two types of electron traps in Al2O3 for nonvolatile memory applications L Sambuco Salomone, J Lipovetzky, SH Carbonetto, G Inza, EG Redin, ... Journal of Applied Physics 113 (7), 2013 | 17 | 2013 |
| CMOS differential and amplified dosimeter with field oxide N-channel MOSFETs S Carbonetto, M Garcia-Inza, J Lipovetzky, MJ Carra, E Redin, ... IEEE Transactions on Nuclear Science 61 (6), 3466-3471, 2014 | 15 | 2014 |
| Numerical modeling of MOS dosimeters under switched bias irradiations LS Salomone, A Faigón, EG Redin IEEE Transactions on Nuclear Science 62 (4), 1665-1673, 2015 | 14 | 2015 |
| Electrical Characterization of Defects Created by γ-Radiation in HfO2-Based MIS Structures for RRAM Applications H García, MB González, MM Mallol, H Castán, S Dueñas, F Campabadal, ... Journal of Electronic Materials 47, 5013-5018, 2018 | 11 | 2018 |
| Long term effects of charge redistribution in cycled bias operating MOS dosimeter LS Salomone, A Holmes-Siedle, A Faigón IEEE Transactions on Nuclear Science 63 (6), 2997-3002, 2016 | 11 | 2016 |
| Experimental evidence and modeling of non-monotonic responses in MOS dosimeters A Faigón, MG Inza, J Lipovetzky, E Redin, S Carbonetto, LS Salomone, ... Radiation Physics and Chemistry 95, 44-46, 2014 | 11 | 2014 |
| Experimental characterization and numerical modeling of total ionizing dose effects on field oxide MOS dosimeters MV Cassani, LS Salomone, S Carbonetto, A Faigón, E Redin, ... Radiation Physics and Chemistry 182, 109338, 2021 | 9 | 2021 |
| Deep electron traps in HfO2-based metal-oxide-semiconductor capacitors LS Salomone, J Lipovetzky, SH Carbonetto, MAG Inza, EG Redin, ... Thin Solid Films 600, 36-42, 2016 | 9 | 2016 |
| Electron trapping in amorphous Al 2 O 3 LS Salomone, F Campabadal, A Faigón J. Appl. Phys. 123 (8), 2018 | 5 | 2018 |
| Radiation and bias switch-induced charge dynamics in Al2O3-based metal-oxide-semiconductor structures L Sambuco Salomone, A Kasulin, J Lipovetzky, SH Carbonetto, ... Journal of Applied Physics 116 (17), 2014 | 5 | 2014 |
| Numerical modeling of radiation-induced charge neutralization in MOS devices LS Salomone, M Garcia-Inza, S Carbonetto, J Lipovetzky, E Redin, ... Radiation Measurements 153, 106745, 2022 | 4 | 2022 |
| Ionizing radiation differential sensor based on thick gate oxide MOS transistors MJ Carra, MAG Inza, J Lipovetzky, S Carbonetto, E Redin, LS Salomone, ... 2013 7th Argentine School of Micro-Nanoelectronics, Technology and …, 2013 | 2 | 2013 |
| Charge trapping/detrapping in HfO2-based MOS devices LS Salomone, SH Carbonetto, MAG Inza, J Lipovetzky, EG Redín, ... 2011 Argentine School of Micro-Nanoelectronics, Technology and Applications, 1-5, 2011 | 2 | 2011 |
| Influence of Interface Traps on MOSFET thermal coefficients and its effects on the ZTC current RG Cozzi, E Redín, M Garcia–Inza, LS Salomone, A Faigón, S Carbonetto Microelectronics Reliability 137, 114752, 2022 | 1 | 2022 |
| Modeling Switched Bias Irradiations on Floating Gate Devices: Application to Dosimetry LS Salomone, M Garcia-Inza, S Carbonetto, J Lipovetzky, E Redin, ... IEEE Transactions on Nuclear Science 69 (6), 1229-1235, 2022 | 1 | 2022 |
| Total Ionizing Dose Effects on Floating Gate Structures-Preliminary Results S Carbonetto, L Genovese, LS Salomone, M Garcia-Inza, EG Redin, ... 2021 IEEE 22nd Latin American Test Symposium (LATS), 1-6, 2021 | 1 | 2021 |
| Numerical modeling of radiation-induced charge loss in CMOS floating gate cells LS Salomone, MG Inza, S Carbonetto, A Faigón Elektron: ciencia y tecnología en la electrónica de hoy 5 (2), 100-104, 2021 | 1 | 2021 |
