Dian Lei
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Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering
ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, ...
Optics Express 23 (10), 13580-13586, 2015
Two-micron-wavelength germanium-tin photodiodes with low dark current and gigahertz bandwidth
Y Dong, W Wang, S Xu, D Lei, X Gong, X Guo, H Wang, SY Lee, WK Loke, ...
Optics express 25 (14), 15818-15827, 2017
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique
Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ...
Optics express 23 (14), 18611-18619, 2015
Germanium-tin on Si avalanche photodiode: device design and technology demonstration
Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ...
IEEE Transactions on Electron Devices 62 (1), 128-135, 2014
Floating-base germanium-tin heterojunction phototransistor for high-efficiency photodetection in short-wave infrared range
W Wang, Y Dong, SY Lee, WK Loke, D Lei, SF Yoon, G Liang, X Gong, ...
Optics express 25 (16), 18502-18507, 2017
Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality
D Lei, W Wang, Z Zhang, J Pan, X Gong, G Liang, ES Tok, YC Yeo
Journal of Applied Physics 119 (2), 024502, 2016
GeSn lateral pin photodetector on insulating substrate
S Xu, YC Huang, KH Lee, W Wang, Y Dong, D Lei, S Masudy-Panah, ...
Optics express 26 (13), 17312-17321, 2018
GeSn-on-insulator substrate formed by direct wafer bonding
D Lei, KH Lee, S Bao, W Wang, B Wang, X Gong, CS Tan, YC Yeo
Applied Physics Letters 109 (2), 2016
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platform
W Wang, D Lei, YC Huang, KH Lee, WK Loke, Y Dong, S Xu, CS Tan, ...
Optics express 26 (8), 10305-10314, 2018
Integrating GeSn photodiode on a 200 mm Ge-on-insulator photonics platform with Ge CMOS devices for advanced OEIC operating at 2 μm band
S Xu, K Han, YC Huang, KH Lee, Y Kang, S Masudy-Panah, Y Wu, D Lei, ...
Optics express 27 (19), 26924-26939, 2019
Germanium-tin (GeSn) P-channel fin field-effect transistor fabricated on a novel GeSn-on-insulator substrate
D Lei, KH Lee, YC Huang, W Wang, S Masudy-Panah, S Yadav, A Kumar, ...
IEEE Transactions on Electron Devices 65 (9), 3754-3761, 2018
The first GeSn FinFET on a novel GeSnOI substrate achieving lowest S of 79 mV/decade and record high Gm, int of 807 μS/μm for GeSn P-FETs
D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, S Yadav, A Kumar, ...
2017 Symposium on VLSI Technology, T198-T199, 2017
Digital Etch Technique for Forming Ultra-Scaled Germanium-Tin (Ge1− xSnx) Fin Structure
W Wang, D Lei, Y Dong, G Xiao, ES Tok, YC Yeo
Scientific Reports 7, 2017
Ultra-low specific contact resistivity (1.4 10− 9 Ω cm2) for metal contacts on in-situ Ga-doped Ge0. 95Sn0. 05 film
Y Wu, S Luo, W Wang, S Masudy-Panah, D Lei, G Liang, X Gong, YC Yeo
Journal of Applied Physics 122 (22), 2017
Germanium-tin multiple quantum well on silicon avalanche photodiode for photodetection at two micron wavelength
Y Dong, W Wang, SY Lee, D Lei, X Gong, WK Loke, SF Yoon, G Liang, ...
Semiconductor Science and Technology 31 (9), 095001, 2016
High Performance Ga2O3 Metal-Oxide-Semiconductor Field-Effect Transistors on an AlN/Si Substrate
D Lei, K Han, Y Wu, Z Liu, X Gong
IEEE Journal of the Electron Devices Society 7, 596-600, 2019
Nanoscale metal-InGaAs contacts with ultra-low specific contact resistivity: Improved interfacial quality and extraction methodology
S Masudy-Panah, Y Wu, D Lei, A Kumar, YC Yeo, X Gong
Journal of Applied Physics 123 (2), 2018
InAlP-capped (100) Ge nFETs with 1.06 nm EOT: Achieving record high peak mobility and first integration on 300 mm Si substrate
X Gong, Q Zhou, MHS Owen, X Xu, D Lei, SH Chen, G Tsai, CC Cheng, ...
2014 IEEE International Electron Devices Meeting, 9.4. 1-9.4. 4, 2014
Thermal stability of germanium-tin (GeSn) fins
D Lei, KH Lee, S Bao, W Wang, S Masudy-Panah, CS Tan, ES Tok, ...
Applied Physics Letters 111 (25), 2017
Investigation on temperature dependent DC characteristics of gallium oxide metal-oxide-semiconductor field-effect transistors from 25 C to 300 C
D Lei, K Han, Y Wu, Z Liu, X Gong
Applied Physics Express 12 (4), 041001, 2019
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