Tony Kenyon

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Adnan MehonicAssociate Professor, University College LondonVerified email at ucl.ac.uk
Mark BuckwellResearch Fellow, University College LondonVerified email at ucl.ac.uk
Wing H NgUniversity College London (UCL)Verified email at ucl.ac.uk
Luca MontesiUniversity College LondonVerified email at ucl.ac.uk
CE ChryssouProfessorVerified email at muscatuniversity.edu.om
Alexander ShlugerProfessor of PhysicsVerified email at ucl.ac.uk
Manveer S MundeUniversity College London (Alumni)Verified email at ucl.ac.uk
Philip TrwogaUniversity of WestminsterVerified email at my.westminster.ac.uk
Sébastien CueffCNRS Researcher, Institut des Nanotechnologies de LyonVerified email at ec-lyon.fr
Sarah FearnResearch Scientist, Imperial CollegeVerified email at imperial.ac.uk
Michel BosmanNational University of SingaporeVerified email at nus.edu.sg
Parkin IUCLVerified email at ucl.ac.uk
David Zhe GaoNanolayers Research Computing, Norwegian University of Science and TechnologyVerified email at nanolayers.com
Claudio OtonAssociate Professor, Scuola Superiore Sant'Anna, Pisa (Italy)Verified email at santannapisa.it
Matthew HalsallProfessor of Photonics at The University of ManchesterVerified email at manchester.ac.uk
Tsutomu IwayamaExecutive Vice-President | Professor, Aichi University of Education / 愛知教育大学Verified email at auecc.aichi-edu.ac.jp
Nina F. ThornhillEmeritus Professor of Process Automation, Imperial College LondonVerified email at imperial.ac.uk
Colin HumphreysQueen Mary University of LondonVerified email at qmul.ac.uk
Iain CroweElectrical and Electronic Engineering, The University of ManchestVerified email at manchester.ac.uk
Dovydas JoksasResearcher, University College LondonVerified email at ucl.ac.uk

Tony Kenyon

Professor of Nanoelectronic & Nanophotonic Materials, UCL

Verified email at ee.ucl.ac.uk - Homepage

Memristors Nanotechnology neuromorphic computing RRAM


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Recent developments in rare-earth doped materials for optoelectronics AJ Kenyon Progress in Quantum electronics 26 (4-5), 225-284, 2002	1084	2002
Recommended methods to study resistive switching devices M Lanza, HSP Wong, E Pop, D Ielmini, D Strukov, BC Regan, L Larcher, ... Advanced Electronic Materials 5 (1), 1800143, 2019	589	2019
Erbium in silicon AJ Kenyon Semiconductor Science and Technology 20 (12), R65, 2005	383	2005
Brain-inspired computing needs a master plan A Mehonic, AJ Kenyon Nature 604 (7905), 255-260, 2022	319	2022
Optical properties of PECVD erbium-doped silicon-rich silica: evidence for energy transfer between silicon microclusters and erbium ions AJ Kenyon, PF Trwoga, M Federighi, CW Pitt Journal of Physics: Condensed Matter 6 (21), L319, 1994	302	1994
Resistive switching in silicon suboxide films A Mehonic, S Cueff, M Wojdak, S Hudziak, O Jambois, C Labbé, ... Journal of Applied Physics 111 (7), 2012	299	2012
Modeling the contribution of quantum confinement to luminescence from silicon nanoclusters PF Trwoga, AJ Kenyon, CW Pitt Journal of applied physics 83 (7), 3789-3794, 1998	264	1998
The origin of photoluminescence from thin films of silicon‐rich silica AJ Kenyon, PF Trwoga, CW Pitt, G Rehm Journal of Applied Physics 79 (12), 9291-9300, 1996	254	1996
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ... Journal of Applied Physics 91 (1), 367-374, 2002	252	2002
Memristors--from In-memory computing, Deep Learning Acceleration, Spiking Neural Networks, to the Future of Neuromorphic and Bio-inspired Computing A Mehonic, A Sebastian, B Rajendran, O Simeone, E Vasilaki, AJ Kenyon Advanced Intelligent Systems 2 (11), 2000085, 2020	212	2020
Silicon Oxide (SiO_x): A Promising Material for Resistance Switching? A Mehonic, AL Shluger, D Gao, I Valov, E Miranda, D Ielmini, A Bricalli, ... Advanced materials 30 (43), 1801187, 2018	199	2018
Quantum conductance in silicon oxide resistive memory devices A Mehonic, A Vrajitoarea, S Cueff, S Hudziak, H Howe, C Labbe, R Rizk, ... Scientific reports 3 (1), 2708, 2013	197	2013
Evidence of energy coupling between Si nanocrystals and in ion-implanted silica thin films CE Chryssou, AJ Kenyon, TS Iwayama, CW Pitt, DE Hole Applied Physics Letters 75 (14), 2011-2013, 1999	180	1999
Standards for the characterization of endurance in resistive switching devices M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suñe, AJ Kenyon, ... ACS nano 15 (11), 17214-17231, 2021	163	2021
Electrically tailored resistance switching in silicon oxide A Mehonic, S Cueff, M Wojdak, S Hudziak, C Labbé, R Rizk, AJ Kenyon Nanotechnology 23 (45), 455201, 2012	138	2012
Emulating the electrical activity of the neuron using a silicon oxide RRAM cell A Mehonic, AJ Kenyon Frontiers in neuroscience 10, 57, 2016	133	2016
Structural changes and conductance thresholds in metal-free intrinsic SiOx resistive random access memory A Mehonic, M Buckwell, L Montesi, L Garnett, S Hudziak, S Fearn, ... Journal of Applied Physics 117 (12), 2015	130	2015
Complementary metal‐oxide semiconductor and memristive hardware for neuromorphic computing M Rahimi Azghadi, YC Chen, JK Eshraghian, J Chen, CY Lin, ... Advanced Intelligent Systems 2 (5), 1900189, 2020	124	2020
Losses in luminescent solar concentrators unveiled C Tummeltshammer, A Taylor, AJ Kenyon, I Papakonstantinou Solar Energy Materials and Solar Cells 144, 40-47, 2016	110	2016
Towards population inversion of electrically pumped Er ions sensitized by Si nanoclusters O Jambois, F Gourbilleau, AJ Kenyon, J Montserrat, R Rizk, B Garrido Optics express 18 (3), 2230-2235, 2010	109	2010

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