Peng Huang
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HfOx based vertical resistive random access memory for cost-effective 3D cross-point architecture without cell selector
HY Chen, S Yu, B Gao, P Huang, J Kang, HSP Wong
2012 international electron devices meeting, 20.7. 1-20.7. 4, 2012
Reconfigurable Nonvolatile Logic Operations in Resistance Switching Crossbar Array for Large-Scale Circuits.
P Huang, J Kang, Y Zhao, S Chen, R Han, Z Zhou, Z Chen, W Ma, M Li, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (44), 9758-9764, 2016
A physics-based compact model of metal-oxide-based RRAM DC and AC operations
P Huang, XY Liu, B Chen, HT Li, YJ Wang, YX Deng, KL Wei, L Zeng, ...
IEEE transactions on electron devices 60 (12), 4090-4097, 2013
Ultra-low-energy three-dimensional oxide-based electronic synapses for implementation of robust high-accuracy neuromorphic computation systems
B Gao, Y Bi, HY Chen, R Liu, P Huang, B Chen, L Liu, X Liu, S Yu, ...
ACS nano 8 (7), 6998-7004, 2014
RRAM crossbar array with cell selection device: A device and circuit interaction study
Y Deng, P Huang, B Chen, X Yang, B Gao, J Wang, L Zeng, G Du, J Kang, ...
IEEE transactions on Electron Devices 60 (2), 719-726, 2012
Direct Observations of Nanofilament Evolution in Switching Processes in HfO2‐Based Resistive Random Access Memory by In Situ TEM Studies
C Li, B Gao, Y Yao, X Guan, X Shen, Y Wang, P Huang, L Liu, X Liu, J Li, ...
Advanced Materials 29 (10), 1602976, 2017
Physical mechanisms of endurance degradation in TMO-RRAM
B Chen, Y Lu, B Gao, YH Fu, FF Zhang, P Huang, YS Chen, LF Liu, ...
2011 International electron devices meeting, 12.3. 1-12.3. 4, 2011
Standards for the characterization of endurance in resistive switching devices
M Lanza, R Waser, D Ielmini, JJ Yang, L Goux, J Suņe, AJ Kenyon, ...
ACS nano 15 (11), 17214-17231, 2021
A SPICE model of resistive random access memory for large-scale memory array simulation
H Li, P Huang, B Gao, B Chen, X Liu, J Kang
IEEE Electron Device Letters 35 (2), 211-213, 2013
Variation-aware, reliability-emphasized design and optimization of RRAM using SPICE model
H Li, Z Jiang, P Huang, Y Wu, HY Chen, B Gao, XY Liu, JF Kang, ...
2015 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2015
A learnable parallel processing architecture towards unity of memory and computing
H Li, B Gao, Z Chen, Y Zhao, P Huang, H Ye, L Liu, X Liu, J Kang
Scientific reports 5 (1), 13330, 2015
Oxide-based RRAM: Unified microscopic principle for both unipolar and bipolar switching
B Gao, JF Kang, YS Chen, FF Zhang, B Chen, P Huang, LF Liu, XY Liu, ...
2011 International Electron Devices Meeting, 17.4. 1-17.4. 4, 2011
Low-Power Resistive Switching Characteristic in HfO2/TiOx Bi-Layer Resistive Random-Access Memory
X Ding, Y Feng, P Huang, L Liu, J Kang
Nanoscale research letters 14, 1-7, 2019
Analytic model of endurance degradation and its practical applications for operation scheme optimization in metal oxide based RRAM
P Huang, B Chen, YJ Wang, FF Zhang, L Shen, R Liu, L Zeng, G Du, ...
2013 IEEE International electron devices meeting, 22.5. 1-22.5. 4, 2013
A physical based analytic model of RRAM operation for circuit simulation
P Huang, XY Liu, WH Li, YX Deng, B Chen, Y Lu, B Gao, L Zeng, KL Wei, ...
2012 International Electron Devices Meeting, 26.6. 1-26.6. 4, 2012
Compact Model of HfOX-Based Electronic Synaptic Devices for Neuromorphic Computing
P Huang, D Zhu, S Chen, Z Zhou, Z Chen, B Gao, L Liu, X Liu, J Kang
IEEE Transactions on Electron Devices 64 (2), 614-621, 2017
Optimized learning scheme for grayscale image recognition in a RRAM based analog neuromorphic system
Z Chen, B Gao, Z Zhou, P Huang, H Li, W Ma, D Zhu, L Liu, X Liu, J Kang, ...
2015 IEEE International Electron Devices Meeting (IEDM), 17.7. 1-17.7. 4, 2015
BEOL based RRAM with one extra-mask for low cost, highly reliable embedded application in 28 nm node and beyond
H Lv, X Xu, P Yuan, D Dong, T Gong, J Liu, Z Yu, P Huang, K Zhang, ...
2017 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2017
Modeling disorder effect of the oxygen vacancy distribution in filamentary analog RRAM for neuromorphic computing
B Gao, H Wu, W Wu, X Wang, P Yao, Y Xi, W Zhang, N Deng, P Huang, ...
2017 IEEE International Electron Devices Meeting (IEDM), 4.4. 1-4.4. 4, 2017
A novel convolution computing paradigm based on NOR flash array with high computing speed and energy efficiency
R Han, P Huang, Y Xiang, C Liu, Z Dong, Z Su, Y Liu, L Liu, X Liu, J Kang
IEEE Transactions on Circuits and Systems I: Regular Papers 66 (5), 1692-1703, 2019
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