| Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3 B Hoex, SBS Heil, E Langereis, MCM Van de Sanden, WMM Kessels Applied physics letters 89 (4), 2006 | 943 | 2006 |
| On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3 B Hoex, JJH Gielis, MCM Van de Sanden, WMM Kessels Journal of Applied physics 104 (11), 2008 | 728 | 2008 |
| Silicon surface passivation by atomic layer deposited Al2O3 B Hoex, J Schmidt, P Pohl, MCM Van de Sanden, WMM Kessels Journal of Applied Physics 104 (4), 2008 | 634 | 2008 |
| Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3 J Schmidt, A Merkle, R Brendel, B Hoex, MCM de Sanden, WMM Kessels Progress in photovoltaics: research and applications 16 (6), 461-466, 2008 | 611 | 2008 |
| Black silicon: fabrication methods, properties and solar energy applications X Liu, PR Coxon, M Peters, B Hoex, JM Cole, DJ Fray Energy & Environmental Science 7 (10), 3223-3263, 2014 | 589 | 2014 |
| Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3 B Hoex, J Schmidt, R Bock, PP Altermatt, MCM Van De Sanden, ... Applied Physics Letters 91 (11), 2007 | 515 | 2007 |
| High efficiency n-type Si solar cells on Al2O3-passivated boron emitters J Benick, B Hoex, MCM Van De Sanden, WMM Kessels, O Schultz, ... Applied Physics Letters 92 (25), 2008 | 495 | 2008 |
| Dielectric surface passivation for silicon solar cells: A review RS Bonilla, B Hoex, P Hamer, PR Wilshaw physica status solidi (a) 214 (7), 1700293, 2017 | 315 | 2017 |
| Stability of Al2O3 and Al2O3/a-SiNx: H stacks for surface passivation of crystalline silicon G Dingemans, P Engelhart, R Seguin, F Einsele, B Hoex, ... Journal of Applied Physics 106 (11), 2009 | 219 | 2009 |
| Optimised antireflection coatings using silicon nitride on textured silicon surfaces based on measurements and multidimensional modelling S Duttagupta, F Ma, B Hoex, T Mueller, AG Aberle Energy procedia 15, 78-83, 2012 | 190 | 2012 |
| Negative charge and charging dynamics in Al2O3 films on Si characterized by second-harmonic generation JJH Gielis, B Hoex, MCM Van De Sanden, WMM Kessels Journal of Applied Physics 104 (7), 2008 | 189 | 2008 |
| Excellent c-Si surface passivation by low-temperature atomic layer deposited titanium oxide B Liao, B Hoex, AG Aberle, D Chi, CS Bhatia Applied Physics Letters 104 (25), 2014 | 165 | 2014 |
| A fill factor loss analysis method for silicon wafer solar cells A Khanna, T Mueller, RA Stangl, B Hoex, PK Basu, AG Aberle IEEE Journal of Photovoltaics 3 (4), 1170-1177, 2013 | 160 | 2013 |
| Cd-Free Cu 2 ZnSnS 4 solar cell with an efficiency greater than 10% enabled by Al 2 O 3 passivation layers X Cui, K Sun, J Huang, JS Yun, CY Lee, C Yan, H Sun, Y Zhang, C Xue, ... Energy & environmental science 12 (9), 2751-2764, 2019 | 147 | 2019 |
| The role of hydrogenation and gettering in enhancing the efficiency of next‐generation Si solar cells: An industrial perspective B Hallam, D Chen, M Kim, B Stefani, B Hoex, M Abbott, S Wenham physica status solidi (a) 214 (7), 1700305, 2017 | 102 | 2017 |
| Surface passivation of phosphorus‐diffused n+‐type emitters by plasma‐assisted atomic‐layer deposited Al2O3 B Hoex, MCM Van de Sanden, J Schmidt, R Brendel, WMM Kessels physica status solidi (RRL)–Rapid Research Letters 6 (1), 4-6, 2012 | 102 | 2012 |
| Broken metal fingers in silicon wafer solar cells and PV modules P Chaturvedi, B Hoex, TM Walsh Solar Energy Materials and Solar Cells 108, 78-81, 2013 | 100 | 2013 |
| Enhanced Heterojunction Interface Quality To Achieve 9.3% Efficient Cd-Free Cu2ZnSnS4 Solar Cells Using Atomic Layer Deposition ZnSnO Buffer Layer X Cui, K Sun, J Huang, CY Lee, C Yan, H Sun, Y Zhang, F Liu, ... Chemistry of materials 30 (21), 7860-7871, 2018 | 96 | 2018 |
| Absolute densities of N and excited in a plasma S Agarwal, B Hoex, MCM Van de Sanden, D Maroudas, ES Aydil Applied physics letters 83 (24), 4918-4920, 2003 | 96 | 2003 |
| Acceleration and mitigation of carrier‐induced degradation in p‐type multi‐crystalline silicon DNR Payne, CE Chan, BJ Hallam, B Hoex, MD Abbott, SR Wenham, ... physica status solidi (RRL)–Rapid Research Letters 10 (3), 237-241, 2016 | 95 | 2016 |
