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Paweł Podemski
Paweł Podemski
Wrocław University of Science and Technology
Verified email at pwr.edu.pl - Homepage
Title
Cited by
Cited by
Year
Carrier trapping and luminescence polarization in quantum dashes
A Musiał, P Kaczmarkiewicz, G Sęk, P Podemski, P Machnikowski, ...
Physical Review B 85 (3), 035314, 2012
492012
Photoreflectance-probed excited states in In As∕ In Ga Al As quantum dashes grown on InP substrate
W Rudno-Rudziński, R Kudrawiec, P Podemski, G Sęk, J Misiewicz, ...
Applied Physics Letters 89 (3), 031908, 2006
462006
Photoluminescence from a single InGaAs epitaxial quantum rod
G Sęk, P Podemski, J Misiewicz, LH Li, A Fiore, G Patriarche
Applied Physics Letters 92 (2), 021901, 2008
392008
Measurement of an Exciton Rabi Rotation in a Single GaN/Al x Ga 1− x N Nanowire-Quantum Dot Using Photoluminescence Spectroscopy: Evidence for Coherent Control
M Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa
Physical Review Letters 111 (5), 057401, 2013
362013
Exciton and biexciton emission from a single InAs/InP quantum dash
G Sęk, P Podemski, A Musiał, J Misiewicz, S Hein, S Höfling, A Forchel
Journal of Applied Physics 105 (8), 086104, 2009
362009
Thermal quenching of photoluminescence from In As∕ In 0.53 Ga 0.23 Al 0.24 As∕ In P quantum dashes with different sizes
P Podemski, R Kudrawiec, J Misiewicz, A Somers, R Schwertberger, ...
Applied Physics Letters 89 (15), 151902, 2006
332006
Columnar quantum dashes for an active region in polarization independent semiconductor optical amplifiers at
P Podemski, G Sęk, K Ryczko, J Misiewicz, S Hein, S Höfling, A Forchel, ...
Applied Physics Letters 93 (17), 171910, 2008
292008
On the applicability of a few level rate equation model to the determination of exciton versus biexciton kinetics in quasi-zero-dimensional structures
G Sęk, A Musiał, P Podemski, J Misiewicz
Journal of Applied Physics 108 (3), 033507, 2010
262010
Experimental evidence on quantum well–quantum dash energy transfer in tunnel injection structures for 1.55 μ m emission
G Sęk, P Poloczek, P Podemski, R Kudrawiec, J Misiewicz, A Somers, ...
Applied Physics Letters 90 (8), 081915, 2007
242007
Height-driven linear polarization of the surface emission from quantum dashes
A Musiał, P Podemski, G Sęk, P Kaczmarkiewicz, J Andrzejewski, ...
Semiconductor Science and Technology 27 (10), 105022, 2012
232012
On the tunnel injection of excitons and free carriers from In0. 53Ga0. 47As/In0. 53Ga0. 23Al0. 24As quantum well to InAs/In0. 53Ga0. 23Al0. 24As quantum dashes
P Podemski, R Kudrawiec, J Misiewicz, A Somers, JP Reithmaier, ...
Applied physics letters 89 (6), 2006
212006
Photoluminescence excitation spectroscopy on single GaN quantum dots
P Podemski, M Holmes, S Kako, M Arita, Y Arakawa
Applied Physics Express 6 (1), 012102, 2012
182012
Single dot photoluminescence excitation spectroscopy in the telecommunication spectral range
P Podemski, A Maryński, P Wyborski, A Bercha, W Trzeciakowski, G Sęk
Journal of Luminescence 212, 300-305, 2019
172019
Probing the Excitonic States of Site-Controlled GaN Nanowire Quantum Dots
MJ Holmes, S Kako, K Choi, P Podemski, M Arita, Y Arakawa
Nano Letters 15 (2), 1047-1051, 2015
152015
Exciton kinetics and few particle effects in self-assembled GaAs-based quantum dashes
G Sęk, A Musiał, P Podemski, M Syperek, J Misiewicz, A Löffler, S Höfling, ...
Journal of Applied Physics 107 (9), 096106, 2010
142010
Orientation dependent emission properties of columnar quantum dash laser structures
S Hein, P Podemski, G Sęk, J Misiewicz, P Ridha, A Fiore, G Patriarche, ...
Applied Physics Letters 94 (24), 241113, 2009
142009
Excited states of neutral and charged excitons in single strongly asymmetric InP-based nanostructures emitting in the telecom C band
M Gawełczyk, P Wyborski, P Podemski, JP Reithmaier, S Höfling, G Sęk
Physical Review B 100 (24), 241304, 2019
132019
Hole Subband Mixing and Polarization of Luminescence from Quantum Dashes: A Simple Model
P Kaczmarkiewicz, A Musiał, G Sęk, P Podemski, P Machnikowski, ...
Acta Physica Polonica A 119, 633-636, 2011
122011
Metamorphic Buffer Layer Platform for 1550 nm Single-Photon Sources Grown by MBE on (100) GaAs Substrate
PA Wroński, P Wyborski, A Musiał, P Podemski, G Sęk, S Höfling, ...
Materials 14 (18), 5221, 2021
112021
Electronic and Optical Properties of InAs QDs Grown by MBE on InGaAs Metamorphic Buffer
P Wyborski, P Podemski, PA Wroński, F Jabeen, S Höfling, G Sęk
Materials 15 (3), 1071, 2022
102022
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