| Negligible carrier freeze-out facilitated by impurity band conduction in highly p-type GaN B Gunning, J Lowder, M Moseley, W Alan Doolittle Applied Physics Letters 101 (8), 2012 | 100 | 2012 |
| Comprehensive study of the electronic and optical behavior of highly degenerate p-type Mg-doped GaN and AlGaN BP Gunning, CAM Fabien, JJ Merola, EA Clinton, WA Doolittle, S Wang, ... Journal of Applied Physics 117 (4), 2015 | 68 | 2015 |
| Highly luminescent, high-indium-content InGaN film with uniform composition and full misfit-strain relaxation AM Fischer, YO Wei, FA Ponce, M Moseley, B Gunning, WA Doolittle Applied Physics Letters 103 (13), 2013 | 57 | 2013 |
| Observation and control of the surface kinetics of InGaN for the elimination of phase separation M Moseley, B Gunning, J Greenlee, J Lowder, G Namkoong, ... Journal of Applied Physics 112 (1), 2012 | 53 | 2012 |
| Low-temperature growth of InGaN films over the entire composition range by MBE CAM Fabien, BP Gunning, WA Doolittle, AM Fischer, YO Wei, H Xie, ... Journal of Crystal Growth 425, 115-118, 2015 | 49 | 2015 |
| Energy band engineering of InGaN/GaN multi-quantum-well solar cells via AlGaN electron-and hole-blocking layers X Huang, H Chen, H Fu, I Baranowski, J Montes, TH Yang, K Fu, ... Applied Physics Letters 113 (4), 2018 | 44 | 2018 |
| Demonstration of> 6.0-kV breakdown voltage in large area vertical GaN pn diodes with step-etched junction termination extensions L Yates, BP Gunning, MH Crawford, J Steinfeldt, ML Smith, VM Abate, ... IEEE Transactions on Electron Devices 69 (4), 1931-1937, 2022 | 38 | 2022 |
| Control of ion content and nitrogen species using a mixed chemistry plasma for GaN grown at extremely high growth rates> 9 μm/h by plasma-assisted molecular beam epitaxy BP Gunning, EA Clinton, JJ Merola, WA Doolittle, RC Bresnahan Journal of Applied Physics 118 (15), 2015 | 37 | 2015 |
| Phase degradation in BxGa1− xN films grown at low temperature by metalorganic vapor phase epitaxy BP Gunning, MW Moseley, DD Koleske, AA Allerman, SR Lee Journal of Crystal Growth 464, 190-196, 2017 | 33 | 2017 |
| Reliability analysis of InGaN/GaN multi-quantum-well solar cells under thermal stress X Huang, H Fu, H Chen, Z Lu, I Baranowski, J Montes, TH Yang, ... Applied Physics Letters 111 (23), 2017 | 29 | 2017 |
| Simulations, practical limitations, and novel growth technology for InGaN-based solar cells CAM Fabien, M Moseley, B Gunning, WA Doolittle, AM Fischer, YO Wei, ... IEEE Journal of Photovoltaics 4 (2), 601-606, 2013 | 27 | 2013 |
| A review of the synthesis of reduced defect density InxGa1− xN for all indium compositions EA Clinton, E Vadiee, CAM Fabien, MW Moseley, BP Gunning, ... Solid-State Electronics 136, 3-11, 2017 | 26 | 2017 |
| Structural and electrical characterization of InN, InGaN, and p-InGaN grown by metal-modulated epitaxy M Moseley, B Gunning, J Lowder, W Alan Doolittle, G Namkoong Journal of Vacuum Science & Technology B 31 (3), 2013 | 23 | 2013 |
| Ultralow voltage GaN vacuum nanodiodes in air KR Sapkota, F Leonard, AA Talin, BP Gunning, BA Kazanowska, ... Nano Letters 21 (5), 1928-1934, 2021 | 21 | 2021 |
| Origin of high hole concentrations in Mg‐doped GaN films AM Fischer, S Wang, FA Ponce, BP Gunning, CAM Fabien, WA Doolittle physica status solidi (b) 254 (8), 1600668, 2017 | 21 | 2017 |
| Liquid Phase Electro-Epitaxy of Memristive LiNbO2 Crystals JD Greenlee, JC Shank, MB Tellekamp, BP Gunning, CAM Fabien, ... Crystal growth & design 14 (5), 2218-2222, 2014 | 19 | 2014 |
| Recovery from plasma etching-induced nitrogen vacancies in p-type gallium nitride using UV/O3 treatments GM Foster, A Koehler, M Ebrish, J Gallagher, T Anderson, B Noesges, ... Applied Physics Letters 117 (8), 2020 | 18 | 2020 |
| A simple edge termination design for vertical GaN PN diodes P Pandey, TM Nelson, WM Collings, MR Hontz, DG Georgiev, AD Koehler, ... IEEE Transactions on Electron Devices 69 (9), 5096-5103, 2022 | 17 | 2022 |
| Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques JC Gallagher, MA Ebrish, MA Porter, AG Jacobs, BP Gunning, RJ Kaplar, ... Scientific Reports 12 (1), 658, 2022 | 15 | 2022 |
| Fabrication and field emission properties of vertical, tapered GaN nanowires etched via phosphoric acid BA Kazanowska, KR Sapkota, P Lu, AA Talin, E Bussmann, T Ohta, ... Nanotechnology 33 (3), 035301, 2021 | 14 | 2021 |
Michael MoseleySandia National LaboratoriesVerified email at sandia.gov
