Xiao Gong
Title
Cited by
Cited by
Year
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400Passivation
X Gong, G Han, F Bai, S Su, P Guo, Y Yang, R Cheng, D Zhang, G Zhang, ...
IEEE electron device letters 34 (3), 339-341, 2013
892013
III–V Multiple-Gate Field-Effect Transistors With High-MobilityChannel and Epi-Controlled Retrograde-Doped Fin
HC Chin, X Gong, L Wang, HK Lee, L Shi, YC Yeo
IEEE Electron Device Letters 32 (2), 146-148, 2010
832010
Lattice-mismatched In0. 4Ga0. 6As Source/Drain stressors with In Situ doping for strained In0. 53 Ga0. 47 as channel n-MOSFETs
HC Chin, X Gong, X Liu, YC Yeo
742009
Relaxed and strained patterned germanium-tin structures: a Raman scattering study
R Cheng, W Wang, X Gong, L Sun, P Guo, H Hu, Z Shen, G Han, YC Yeo
ECS Journal of Solid State Science and Technology 2 (4), P138, 2013
672013
Silane and Ammonia Surface Passivation Technology for High-MobilityMOSFETs
HC Chin, X Liu, X Gong, YC Yeo
IEEE transactions on electron devices 57 (5), 973-979, 2010
612010
In0. 7Ga0. 3As channel n-MOSFET with self-aligned Ni–InGaAs source and drain
X Zhang, H Guo, X Gong, Q Zhou, YR Lin, HY Lin, CH Ko, CH Wann, ...
Electrochemical and Solid State Letters 14 (2), H60, 2010
582010
Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering
KWA ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, X ...
Optics express 23 (10), 13580-13586, 2015
552015
Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering
KWA ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, X ...
Optics express 23 (10), 13580-13586, 2015
552015
Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn)
Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ...
2012 International Electron Devices Meeting, 16.3. 1-16.3. 4, 2012
552012
Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
P Guo, G Han, X Gong, B Liu, Y Yang, W Wang, Q Zhou, J Pan, Z Zhang, ...
Journal of Applied Physics 114 (4), 044510, 2013
542013
Germanium–tin p-channel tunneling field-effect transistor: Device design and technology demonstration
Y Yang, G Han, P Guo, W Wang, X Gong, L Wang, KL Low, YC Yeo
IEEE transactions on electron devices 60 (12), 4048-4056, 2013
532013
A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
X Zhang, HX Guo, X Gong, Q Zhou, YC Yeo
Journal of the Electrochemical Society 159 (5), H511, 2012
432012
Germanium-tin on Si avalanche photodiode: device design and technology demonstration
Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ...
IEEE Transactions on Electron Devices 62 (1), 128-135, 2014
412014
Ge0.83Sn0.17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality
D Lei, W Wang, Z Zhang, J Pan, X Gong, G Liang, ES Tok, YC Yeo
Journal of Applied Physics 119 (2), 024502, 2016
402016
New materials for post-Si computing: Ge and GeSn devices
S Gupta, X Gong, R Zhang, YC Yeo, S Takagi, KC Saraswat
MRS Bulletin 39 (8), 678-686, 2014
402014
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique
Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ...
Optics express 23 (14), 18611-18619, 2015
362015
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
L Wang, S Su, W Wang, X Gong, Y Yang, P Guo, G Zhang, C Xue, ...
Solid-state electronics 83, 66-70, 2013
362013
Toward conformal damage-free doping with abrupt ultrashallow junction: formation of Si monolayers and laser anneal as a novel doping technique for InGaAs nMOSFETs
EYJ Kong, P Guo, X Gong, B Liu, YC Yeo
IEEE Transactions on Electron Devices 61 (4), 1039-1046, 2014
342014
Evaluation of negative capacitance ferroelectric MOSFET for analog circuit applications
Y Li, Y Kang, X Gong
IEEE Transactions on Electron Devices 64 (10), 4317-4321, 2017
332017
Artificial synapses based on multiterminal memtransistors for neuromorphic application
L Wang, W Liao, SL Wong, ZG Yu, S Li, YF Lim, X Feng, WC Tan, ...
Advanced Functional Materials 29 (25), 1901106, 2019
322019
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