Xiao Gong
TitleCited byYear
III–V Multiple-Gate Field-Effect Transistors With High-MobilityChannel and Epi-Controlled Retrograde-Doped Fin
HC Chin, X Gong, L Wang, HK Lee, L Shi, YC Yeo
IEEE Electron Device Letters 32 (2), 146-148, 2010
802010
Germanium–Tin (GeSn) p-Channel MOSFETs Fabricated on (100) and (111) Surface Orientations With Sub-400Passivation
X Gong, G Han, F Bai, S Su, P Guo, Y Yang, R Cheng, D Zhang, G Zhang, ...
IEEE Electron Device Letters 34 (3), 339-341, 2013
772013
Lattice-mismatched In0. 4Ga0. 6As Source/Drain stressors with In Situ doping for strained In0. 53 Ga0. 47 as channel n-MOSFETs
HC Chin, X Gong, X Liu, YC Yeo
IEEE Electron Device Letters 30 (8), 805-807, 2009
702009
Silane and Ammonia Surface Passivation Technology for High-MobilityMOSFETs
HC Chin, X Liu, X Gong, YC Yeo
IEEE Transactions on Electron Devices 57 (5), 973-979, 2010
602010
In0. 7Ga0. 3As channel n-MOSFET with self-aligned Ni–InGaAs source and drain
X Zhang, H Guo, X Gong, Q Zhou, YR Lin, HY Lin, CH Ko, CH Wann, ...
Electrochemical and Solid-State Letters 14 (2), H60-H62, 2011
582011
Relaxed and strained patterned germanium-tin structures: a Raman scattering study
R Cheng, W Wang, X Gong, L Sun, P Guo, H Hu, Z Shen, G Han, YC Yeo
ECS Journal of Solid State Science and Technology 2 (4), P138-P145, 2013
572013
Towards direct band-to-band tunneling in p-channel tunneling field effect transistor (TFET): Technology enablement by germanium-tin (GeSn)
Y Yang, S Su, P Guo, W Wang, X Gong, L Wang, KL Low, G Zhang, C Xue, ...
2012 International Electron Devices Meeting, 16.3. 1-16.3. 4, 2012
512012
Germanium–tin p-channel tunneling field-effect transistor: Device design and technology demonstration
Y Yang, G Han, P Guo, W Wang, X Gong, L Wang, KL Low, YC Yeo
IEEE Transactions on Electron Devices 60 (12), 4048-4056, 2013
492013
Ge0.97Sn0.03 p-channel metal-oxide-semiconductor field-effect transistors: Impact of Si surface passivation layer thickness and post metal annealing
P Guo, G Han, X Gong, B Liu, Y Yang, W Wang, Q Zhou, J Pan, Z Zhang, ...
Journal of Applied Physics 114 (4), 044510, 2013
472013
Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering
KWA ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, X ...
Optics express 23 (10), 13580-13586, 2015
452015
Large-scale two-dimensional MoS 2 photodetectors by magnetron sputtering
KWA ZP Ling, R Yang, JW Chai, SJ Wang, WS Leong, Y Tong, D Lei, Q Zhou, X ...
Optics express 23 (10), 13580-13586, 2015
452015
A self-aligned Ni-InGaAs contact technology for InGaAs channel n-MOSFETs
X Zhang, HX Guo, X Gong, Q Zhou, YC Yeo
Journal of the Electrochemical Society 159 (5), H511-H515, 2012
432012
New materials for post-Si computing: Ge and GeSn devices
S Gupta, X Gong, R Zhang, YC Yeo, S Takagi, KC Saraswat
MRS Bulletin 39 (8), 678-686, 2014
362014
Ge0. 83Sn0. 17 p-channel metal-oxide-semiconductor field-effect transistors: Impact of sulfur passivation on gate stack quality
D Lei, W Wang, Z Zhang, J Pan, X Gong, G Liang, ES Tok, YC Yeo
Journal of Applied Physics 119 (2), 024502, 2016
332016
Germanium-tin on Si avalanche photodiode: device design and technology demonstration
Y Dong, W Wang, X Xu, X Gong, D Lei, Q Zhou, Z Xu, WK Loke, SF Yoon, ...
IEEE Transactions on Electron Devices 62 (1), 128-135, 2014
322014
Strained germanium–tin (GeSn) p-channel metal-oxide-semiconductor field-effect-transistors (p-MOSFETs) with ammonium sulfide passivation
L Wang, S Su, W Wang, X Gong, Y Yang, P Guo, G Zhang, C Xue, ...
Solid-State Electronics 83, 66-70, 2013
322013
Strained germanium-tin (GeSn) N-channel MOSFETs featuring low temperature N+/P junction formation and GeSnO2 interfacial layer
G Han, S Su, L Wang, W Wang, X Gong, Y Yang, P Guo, C Guo, G Zhang, ...
2012 Symposium on VLSI Technology (VLSIT), 97-98, 2012
322012
Multiple-gate In0. 53Ga0. 47As channel n-MOSFETs with self-aligned Ni-InGaAs contacts
X Zhang, HX Guo, X Gong, YC Yeo
ECS Journal of Solid State Science and Technology 1 (2), P82-P85, 2012
312012
Germanium-based transistors for future high performance and low power logic applications
YC Yeo, X Gong, MJH van Dal, G Vellianitis, M Passlack
2015 IEEE International Electron Devices Meeting (IEDM), 2.4. 1-2.4. 4, 2015
302015
Suppression of dark current in germanium-tin on silicon pin photodiode by a silicon surface passivation technique
Y Dong, W Wang, D Lei, X Gong, Q Zhou, SY Lee, WK Loke, SF Yoon, ...
Optics express 23 (14), 18611-18619, 2015
302015
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