C.R. Eddy,  Jr.
Cited by
Cited by
Epitaxial-graphene RF field-effect transistors on Si-face 6H-SiC substrates
JS Moon, D Curtis, M Hu, D Wong, C McGuire, PM Campbell, G Jernigan, ...
IEEE Electron Device Letters 30 (6), 650-652, 2009
Handbook of advanced plasma processing techniques
RJ Shul, SJ Pearton
Springer Science & Business Media, 2011
Hall effect mobility of epitaxial graphene grown on silicon carbide
JL Tedesco, BL VanMil, RL Myers-Ward, JM McCrate, SA Kitt, ...
Applied Physics Letters 95 (12), 122102, 2009
Technique for the dry transfer of epitaxial graphene onto arbitrary substrates
JD Caldwell, TJ Anderson, JC Culbertson, GG Jernigan, KD Hobart, ...
ACS nano 4 (2), 1108-1114, 2010
Correlating Raman spectral signatures with carrier mobility in epitaxial graphene: a guide to achieving high mobility on the wafer scale
JA Robinson, M Wetherington, JL Tedesco, PM Campbell, X Weng, J Stitt, ...
Nano letters 9 (8), 2873-2876, 2009
Quantum linear magnetoresistance in multilayer epitaxial graphene
AL Friedman, JL Tedesco, PM Campbell, JC Culbertson, E Aifer, ...
Nano letters 10 (10), 3962-3965, 2010
An outbreak of viral gastroenteritis associated with consumption of sandwiches: implications for the control of transmission by food handlers
UD Parashar, L Dow, RL Fankhauser, CD Humphrey, J Miller, T Ando, ...
Epidemiology & Infection 121 (3), 615-621, 1998
Silicon carbide as a platform for power electronics
CR Eddy, DK Gaskill
Science 324 (5933), 1398-1400, 2009
Top-gated epitaxial graphene FETs on Si-face SiC wafers with a peak transconductance of 600 mS/mm
JS Moon, D Curtis, S Bui, M Hu, DK Gaskill, JL Tedesco, P Asbeck, ...
IEEE Electron Device Letters 31 (4), 260-262, 2010
Growth of gallium nitride thin films by electron cyclotron resonance microwave plasma‐assisted molecular beam epitaxy
CR Eddy Jr, TD Moustakas, J Scanlon
Journal of applied physics 73 (1), 448-455, 1993
Conductance anisotropy in epitaxial graphene sheets generated by substrate interactions
MK Yakes, D Gunlycke, JL Tedesco, PM Campbell, RL Myers-Ward, ...
Nano letters 10 (5), 1559-1562, 2010
Group III-nitride growth on silicon or silicon germanium substrates and method and devices therefor
MA Mastro, CR Eddy Jr, S Akbar
US Patent 7,928,471, 2011
Surface depletion effects in semiconducting nanowires
BS Simpkins, MA Mastro, CR Eddy Jr, PE Pehrsson
Journal of Applied Physics 103 (10), 104313, 2008
Morphology characterization of argon-mediated epitaxial graphene on C-face SiC
JL Tedesco, GG Jernigan, JC Culbertson, JK Hite, Y Yang, KM Daniels, ...
Applied Physics Letters 96 (22), 222103, 2010
Low-phase-noise graphene FETs in ambipolar RF applications
JS Moon, D Curtis, D Zehnder, S Kim, DK Gaskill, GG Jernigan, ...
IEEE Electron Device Letters 32 (3), 270-272, 2011
Large-area transparent conductive few-layer graphene electrode in GaN-based ultra-violet light-emitting diodes
BJ Kim, C Lee, Y Jung, K Hyeon Baik, MA Mastro, JK Hite, CR Eddy Jr, ...
Applied Physics Letters 99 (14), 143101, 2011
Reduced self-heating in AlGaN/GaN HEMTs using nanocrystalline diamond heat-spreading films
MJ Tadjer, TJ Anderson, KD Hobart, TI Feygelson, JD Caldwell, CR Eddy, ...
IEEE electron device letters 33 (1), 23-25, 2011
A (001) β-Ga2O3 MOSFET with+ 2.9 V threshold voltage and HfO2 gate dielectric
MJ Tadjer, NA Mahadik, VD Wheeler, ER Glaser, L Ruppalt, AD Koehler, ...
ECS Journal of Solid State Science and Technology 5 (9), P468, 2016
Enhanced performance in epitaxial graphene FETs with optimized channel morphology
YM Lin, DB Farmer, KA Jenkins, Y Wu, JL Tedesco, RL Myers-Ward, ...
IEEE Electron Device Letters 32 (10), 1343-1345, 2011
Guided resonances in asymmetrical GaN photonic crystal slabs observed in the visible spectrum
A Rosenberg, MW Carter, JA Casey, M Kim, RT Holm, RL Henry, ...
Optics Express 13 (17), 6564-6571, 2005
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