| Deep level defects throughout the bandgap of (010) β-Ga2O3 detected by optically and thermally stimulated defect spectroscopy Z Zhang, E Farzana, AR Arehart, SA Ringel Applied Physics Letters 108 (5), 2016 | 380 | 2016 |
| Influence of metal choice on (010) β-Ga2O3 Schottky diode properties E Farzana, Z Zhang, PK Paul, AR Arehart, SA Ringel Applied Physics Letters 110 (20), 2017 | 199 | 2017 |
| Impact of proton irradiation on deep level states in n-GaN Z Zhang, AR Arehart, E Cinkilic, J Chen, EX Zhang, DM Fleetwood, ... Applied Physics Letters 103 (4), 2013 | 77 | 2013 |
| Deep traps in nonpolar m-plane GaN grown by ammonia-based molecular beam epitaxy Z Zhang, CA Hurni, AR Arehart, J Yang, RC Myers, JS Speck, SA Ringel Applied Physics Letters 100 (5), 2012 | 50 | 2012 |
| Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy Z Zhang, AR Arehart, ECH Kyle, J Chen, EX Zhang, DM Fleetwood, ... Applied Physics Letters 106 (2), 2015 | 42 | 2015 |
| Modification of the valence band structures of polar and nonpolar plane wurtzite-GaN by anisotropic strain D Fu, R Zhang, B Wang, Z Zhang, B Liu, Z Xie, X Xiu, H Lu, Y Zheng, ... Journal of Applied Physics 106 (2), 2009 | 41 | 2009 |
| Thermal stability of deep level defects induced by high energy proton irradiation in n-type GaN Z Zhang, E Farzana, WY Sun, J Chen, EX Zhang, DM Fleetwood, ... Journal of Applied Physics 118 (15), 2015 | 37 | 2015 |
| Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures Z Zhang, D Cardwell, A Sasikumar, ECH Kyle, J Chen, EX Zhang, ... Journal of Applied Physics 119 (16), 2016 | 34 | 2016 |
| Circular photogalvanic effect at inter-band excitation in InN Z Zhang, R Zhang, B Liu, ZL Xie, XQ Xiu, P Han, H Lu, YD Zheng, ... Solid state communications 145 (4), 159-162, 2008 | 27 | 2008 |
| Observation of the surface circular photogalvanic effect in InN films Z Zhang, R Zhang, ZL Xie, B Liu, M Li, DY Fu, HN Fang, XQ Xiu, H Lu, ... Solid state communications 149 (25-26), 1004-1007, 2009 | 26 | 2009 |
| Correlation of a generation-recombination center with a deep level trap in GaN XS Nguyen, K Lin, Z Zhang, B McSkimming, AR Arehart, JS Speck, ... Applied Physics Letters 106 (10), 102101, 2015 | 24 | 2015 |
| Detailed characterization of deep level defects in InGaN Schottky diodes by optical and thermal deep level spectroscopies E Gür, Z Zhang, S Krishnamoorthy, S Rajan, SA Ringel Applied Physics Letters 99 (9), 2011 | 24 | 2011 |
| Direct Determination of Energy Band Alignments of Ni/Al2O3/GaN MOS Structures Using Internal Photoemission Spectroscopy Z Zhang, CM Jackson, AR Arehart, B McSkimming, JS Speck, SA Ringel Journal of electronic materials 43, 828-832, 2014 | 21 | 2014 |
| Influence of V/III growth flux ratio on trap states in m-plane GaN grown by ammonia-based molecular beam epitaxy Z Zhang, CA Hurni, AR Arehart, JS Speck, SA Ringel Applied Physics Letters 101 (15), 2012 | 18 | 2012 |
| Rashba spin splitting for the first two subbands in AlxGa1− xN/GaN heterostructures M Li, R Zhang, Z Zhang, WS Yan, B Liu, D Fu, CZ Zhao, ZL Xie, XQ Xiu, ... Superlattices and Microstructures 47 (4), 522-529, 2010 | 18 | 2010 |
| Traps in AlGaInP materials and devices lattice matched to GaAs for multi-junction solar cells AR Arehart, MR Brenner, Z Zhang, K Swaminathan, SA Ringel 2010 35th IEEE Photovoltaic Specialists Conference, 001999-002001, 2010 | 14 | 2010 |
| Strain-modulated valence band engineering for enhancement of surface emission in polar and nonpolar plane AlN films DY Fu, R Zhang, BG Wang, Z Zhang, B Liu, ZL Xie, XQ Xiu, H Lu, ... Applied Physics Letters 94 (19), 2009 | 13 | 2009 |
| Proton irradiation-induced traps causing V T instabilities and RF degradation in GaN HEMTs A Sasikumar, Z Zhang, P Kumar, EX Zhang, DM Fleetwood, RD Schrimpf, ... 2015 IEEE International Reliability Physics Symposium, 2E. 3.1-2E. 3.6, 2015 | 11 | 2015 |
| Electron concentration dependence of exciton localization and freeze-out at local potential fluctuations in InN films B Liu, Z Zhang, R Zhang, DY Fu, ZL Xie, H Lu, WJ Schaff, LH Song, ... Applied Physics A 99, 139-143, 2010 | 11 | 2010 |
| In-plane anisotropic photoluminescence of C-plane GaN under asymmetric biaxial strain Z Zhang, DY Fu, R Zhang, B Liu, ZL Xie, XQ Xiu, P Han, YD Zheng, ... Applied Physics Letters 95 (1), 2009 | 9 | 2009 |
